MMSD4148, SMMSD4148
Switching Diode
Features
•
•
•
•
•
SOD−123 Surface Mount Package
High Breakdown Voltage
Fast Speed Switching Time
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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SOD−123
CASE 425
STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Continuous Reverse Voltage
VR
100
V
Forward Current
IF
200
mA
IFSM
1.0
2.0
A
IFRM
0.5
A
TJ, Tstg
−55 to
+150
°C
Forward Surge Current
(Note 1)
t < 1 sec
t = 1 msec
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
Operating and Storage Junction Temperature
Range
Unit
1
CATHODE
MARKING DIAGRAM
5I M G
G
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Typical Values
5I
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board (Note 2)
TA = 25°C
Derate above 25°C
PD
425
mW
3.4
mW/°C
290
°C/W
Thermal Resistance Junction−to−Ambient
2
ANODE
ORDERING INFORMATION
Package
Shipping†
MMSD4148T1G
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
SMMSD4148T1G*
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSD4148T3G
SOD−123
(Pb−Free)
10,000 /
Tape & Reel
SMMSD4148T3G*
SOD−123
(Pb−Free)
10,000 /
Tape & Reel
Device
RqJA
2. FR−5 = 1.0 oz Cu, 1.0 inz pad
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 13
1
Publication Order Number:
MMSD4148T1/D
MMSD4148, SMMSD4148
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
100
−
−
−
25
5.0
−
1000
−
4.0
−
4.0
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IBR = 100 mA)
V(BR)
Reverse Voltage Leakage Current
(VR = 20 V)
(VR = 75 V)
IR
Forward Voltage
(IF = 10 mA)
VF
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
CD
Reverse Recovery Time
(IF = IR = 10 mA) (Figure 1)
trr
V
nA
mA
mV
pF
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2k
100 mH
0.1 mF
tr
IF
tp
0.1 mF
t
IF
trr
10%
t
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
MMSD4148, SMMSD4148
IF, FORWARD CURRENT (mA)
100
10
TA = 85°C
TA = -40°C
1.0
TA = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
40
50
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
10
I R, REVERSE CURRENT (A)
μ
TA = 150°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
CD , DIODE CAPACITANCE (pF)
0.68
0.64
0.60
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
DATE 07 OCT 2009
SCALE 5:1
D
A
ÂÂÂÂ
ÂÂÂÂ
ÂÂÂÂ
A1
1
HE
DIM
A
A1
b
c
D
E
HE
L
q
E
2
q
L
b
C
ÉÉÉ
ÉÉÉ
ÉÉÉ
2.36
0.093
4.19
0.165
ÉÉÉ
ÉÉÉ
ÉÉÉ
MILLIMETERS
MIN
NOM
MAX
0.94
1.17
1.35
0.00
0.05
0.10
0.51
0.61
0.71
----0.15
1.40
1.60
1.80
2.54
2.69
2.84
3.56
3.68
3.86
----0.25
--10 °
0°
MIN
0.037
0.000
0.020
--0.055
0.100
0.140
0.010
0°
INCHES
NOM
0.046
0.002
0.024
--0.063
0.106
0.145
-----
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
--10 °
GENERIC
MARKING DIAGRAM*
1
SOLDERING FOOTPRINT*
0.91
0.036
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
XXXMG
G
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
1.22
0.048
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “ G”, may or may not be present.
STYLE 1:
PIN 1. CATHODE
2. ANODE
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42927B
SOD−123
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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