SMMSZ4689ET1G

SMMSZ4689ET1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOD-123

  • 描述:

    SMMSZ4689ET1G

  • 数据手册
  • 价格&库存
SMMSZ4689ET1G 数据手册
MMSZ4689 5.1 V, 0.5 W Zener Diode Features General Description • Compact Surface Mount with Same Footprint as Mini-Melf • 500 mW Rating on FR-4 or FR-5 Board. • Class 3 ESD Rating (>16 kV) per Human Body Model Half watt, general purpose, medium current surface mount zener in the SOD-123 package. The SOD-123 package has the same footprint as the glass mini-melf (LL-34) package and provides a convenient alternative to the leadless package. Top Mark: CU 1: Cathode 2: Anode 2 1 SOD123 Ordering Information Part Number Top Mark Package Packing Method MMSZ4689 CU SOD-123 2L Tape and Reel Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit Storage Temperature Range -55 to +150 °C Maximum Junction Temperature -55 to +150 °C 970 mV Lead Solder Temperature (Max. 10 second duration) 260 °C Nominal Zener Voltage (VZ) at 50 μA 5.1 V TSTG TJ ΔVZ Parameter Maximum Voltage Change(2) Notes 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. Voltage change is equal to the difference between VZ at 100 μA and VZ at 10 μA. © 2003 Fairchild Semiconductor Corporation MMSZ4689 Rev. 1.1 www.fairchildsemi.com MMSZ4689 — 5.1 V, 0.5 W Zener Diode July 2015 Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit Total Power Dissipation at 25°C 500 mW Derate Above 25°C 6.7 mW/°C RθJA Thermal Resistance, Junction-to-Ambient 340 °C/W RθJL Thermal Resistance, Junction-to-Lead 150 °C/W PD Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit 4.85 5.36 V VZ Zener Voltage IZT = 50 μA D.C IR Reverse Leakage VR = 3.0 V 10 μA VF Forward Voltage IF = 10 mA 900 mV Delta Zener Voltage(2) IZT = 100 μA to 10 μA 970 mV ΔVZ © 2003 Fairchild Semiconductor Corporation MMSZ4689 Rev. 1.1 www.fairchildsemi.com 2 MMSZ4689 — 5.1 V, 0.5 W Zener Diode Thermal Characteristics 10000 100 o ZZ - ZENER IMPEDANCE (Ω) IZ - ZENER CURRENT (mA) TA = 25 C o TA = 125 C 10 o TA = 100 C o TA = 85 C o TA = -25 C 1 5.0 5.2 5.4 o TA = 25 C 5.6 5.8 100 10 1 0.1 6.0 VZ - ZENER VOLTAGE (V) 1 10 100 IZ - ZENER CURRENT (mA) Figure 1. Zener Voltage vs. Zener Current © 2003 Fairchild Semiconductor Corporation MMSZ4689 Rev. 1.1 1000 Figure 2. Zener Current vs. Zener Impedance www.fairchildsemi.com 3 MMSZ4689 — 5.1 V, 0.5 W Zener Diode Typical Performance Characteristics MMSZ4689 — 5.1 V, 0.5 W Zener Diode Physical Dimensions $   %  0,1     0,1    0 % 6 $ 6 /$1'3$77(51 5(&200(1'$7,21 7239,(:   $   6($7,1*3/$1(     )52179,(: 6,'(9,(: 127(681/(6627+(5:,6(63(&,),(' $ 3$&.$*(5()(5(1&(-('(&'2 ,668('9$5,$7,21$' % $//',0(16,216$5(,10,//,0(7(56 & ',0(16,21,1*$1'72/(5$1&,1*3(5 $60(
SMMSZ4689ET1G 价格&库存

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