SMP3003-TL-1E

Ordering number : ENA1655D SMP3003 P-Channel Power MOSFET http://onsemi.com –75V, –100A, 8.0mΩ, TO-263-2L/TO-263 Features • • ON-resistance RDS(on)1=6.2mΩ (typ.) Input capacitance Ciss=13400pF (typ.) • TO-263 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit --75 V ±20 V --100 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 468 mJ --60 A Drain Current (Pulse) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --400 A 90 W °C Note : *1 VDD=--48V, L=100μH, IAV=--60A (Fig.1) *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Drain to Source Breakdown Voltage Symbol Conditions V(BR)DSS IDSS IGSS VDS=--75V, VGS=0V VGS=±16V, VDS=0V VGS(off) | yfs | VDS=--10V, ID=--1mA VDS=--10V, ID=--50A Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID=--50A, VGS=--10V ID=--50A, VGS=--4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance ID=--1mA, VGS=0V Ratings min typ max --75 Unit V --1.2 --10 μA ±10 μA --2.6 140 V S 6.2 8.0 mΩ 8.0 11 mΩ 13400 pF 1000 pF Crss 740 pF 95 ns Rise Time td(on) tr 1000 ns Turn-OFF Delay Time td(off) 800 ns Fall Time tf 820 ns Total Gate Charge Qg 280 nC Gate to Source Charge Qgs 50 nC Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=--100A, VGS=0V --1.0 Reverse Recovery Time trr Qrr See Fig.3 120 ns IS=--100A, VGS=0V, di/dt=--100A/μs 380 nC Reverse Recovery Charge VDS=--20V, f=1MHz See Fig.2 VDS=--48V, VGS=--10V, ID=--100A 55 nC --1.5 V ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2013 September, 2013 91113 TKIM TC-00002966/O2412 TKIM/53012 TKIM TC-00002772/ No. A1655-1/6 O1211 TKIM TC-00002654/21710QA TKIM TC-00002253 SMP3003 --120 --100 --80 --60 Static Drain to Source On-State Resistance, RDS(on) -- mΩ --60 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 ID= --50A Single pulse 16 14 12 10 Tc=75°C 8 25°C 6 --25°C 4 2 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate to Source Voltage, VGS -- V --9 2 °C --25 Tc= C 75° 1.0 7 5 3 2 0.1 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 3 75°C 25°C °C --25 --3.0 --3.5 --4.0 --4.5 --5.0 IT16500 Single pulse 16 14 12 50A = -I D , 0A 4V = -= --5 VGS -10V, I D =VGS 10 8 6 4 2 0 --25 25 50 75 100 125 Case Temperature, Tc -- °C 150 IT16502 IS -- VSD --1000 7 5 3 2 VGS=0V Single pulse --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V --1.4 IT17198 Ciss, Coss, Crss -- VDS 100000 7 5 f=1MHz 3 2 Ciss, Coss, Crss -- pF td (off) 7 tf 5 3 2 tr 100 3 5 7 --1.0 2 3 Ciss 3 2 Coss 1000 7 5 Crss 3 2 td(on) 7 2 2 10000 7 5 1000 5 --0.1 --2.5 18 0 --50 5 7 --100 VDD= --48V VGS= --10V --2.0 RDS(on) -- Tc IT16503 SW Time -- ID 5 --1.5 20 Source Current, IS -- A 5°C 10 7 5 3 2 --1.0 Gate to Source Voltage, VGS -- V --10 VDS= --10V 100 7 5 3 2 --0.5 IT16501 | yfs | -- ID 1000 7 5 3 2 0 IT16499 RDS(on) -- VGS 18 0 --2.0 Tc=7 5°C 25°C --0.2 Static Drain to Source On-State Resistance, RDS(on) -- mΩ 0 20 Forward Transfer Admittance, | yfs | -- S --80 --20 Drain to Source Voltage, VDS -- V Switching Time, SW Time -- ns --100 --40 VGS= --3V --20 0 --120 25° C --40 --140 --25°C --140 Tc= 75° C --1 --160 Drain Current, ID -- A Drain Current, ID -- A --160 VDS= --10V --180 --4V 0V --180 ID -- VGS --200 --6 V --8 V Tc=25°C Tc= --2 5°C ID -- VDS --200 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT14179 100 0 --5 --10 --15 --20 --25 Drain to Source Voltage, VDS -- V --30 IT16505 No. A1655-2/6 SMP3003 VGS -- Qg --10 --9 --8 Drain Current, ID -- A Gate to Source Voltage, VGS -- V --1000 7 5 3 2 VDS= --48V ID= --100A --7 --6 --5 --4 --3 --2 --1 0 0 50 100 150 200 250 Total Gate Charge, Qg -- nC PD -- Tc 350 70 60 50 40 30 20 10 20 40 60 80 100 ID= --100A --10 7 5 3 2 120 Case Temperature, Tc -- °C 140 160 IT15361 0μ s 1m 10 s m DC 100m s op s era tio n 10 μs Operation in this area is limited by RDS(on). --1.0 7 5 3 2 Tc=25°C 2 3 5 7 --10 2 3 5 7--100 2 IT15360 Drain to Source Voltage, VDS -- V EAS -- Ta 120 80 0 10 IT16506 90 0 IDP= --400A(PW≤10μs) --0.1 Single pulse 5 7 --1.0 --0.1 2 3 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 100 300 --100 7 5 3 2 ASO 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT14184 No. A1655-3/6 SMP3003 Package Dimensions SMP3003-DL-1E D2PAK/TO-263-2L CASE 418AP ISSUE O Unit : mm 1: Gate 2: Drain 3: Source 4: Drain Land Pattern Example Packing Type: DL Electrical Connection 2, 4 DL 1 3 No. A1655-4/6 SMP3003 Package Dimensions SMP3003-TL-1E Unit : mm 1: Gate 2: Drain 3: Source 4: Drain Land Pattern Example Packing Type: TL Electrical Connection 2, 4 TL 1 3 No. A1655-5/6 SMP3003 Ordering & Package Information Device Package SMP3003-DL-1E TO-263-2L SC-83, TO-263 SMP3003-TL-1E TO-263 Marking Shipping memo MP3003 800 pcs./reel Pb-Free LOT No. Fig.1 Unclamped Inductive Switching Test Circuit D L Fig.2 Switching Time Test Circuit 0V --10V ≥50Ω RG ID= --50A RL=0.96Ω VIN G SMP3003 0V --10V VDD= --48V VIN S 50Ω VDD D PW=10μs D.C.≤1% VOUT G P.G SMP3003 50Ω S Fig.3 Reverse Recovery Time Test Circuit SMP3003 D L G S VDD Driver MOSFET Note on usage : Since the SMP3003 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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