MSD1819A-RT1G,
NSVMSD1819A-RT1G
General Purpose Amplifier
Transistor
NPN Silicon Surface Mount
www.onsemi.com
This NPN Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC-70/SOT-323 package which is designed for low power surface
mount applications.
Features
•
•
•
•
•
•
SC−70 (SOT−323)
CASE 419
STYLE 3
High hFE, 210 −460
Low VCE(sat), < 0.5 V
Moisture Sensitivity Level 1
ESD Protection:
♦ Human Body Model > 4000 V
♦ Machine Model > 400 V
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
60
Vdc
Collector-Emitter Voltage
V(BR)CEO
50
Vdc
Emitter-Base Voltage
V(BR)EBO
7.0
Vdc
IC
100
mAdc
IC(P)
200
mAdc
Symbol
Max
Unit
Power Dissipation (Note 1)
PD
150
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Collector Current − Peak
THERMAL CHARACTERISTICS
Characteristic
1
BASE
2
EMITTER
MARKING DIAGRAM
MAXIMUM RATINGS (TA = 25°C)
Collector Current − Continuous
COLLECTOR
3
ZR M G
G
1
ZR
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MSD1819A−RT1G
SC−70
(Pb−Free)
3,000 /
Tape & Reel
NSVMSD1819A−RT1G
SC−70
(Pb−Free)
3,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 10
1
Publication Order Number:
MSD1819A−RT1/D
MSD1819A−RT1G, NSVMSD1819A−RT1G
ELECTRICAL CHARACTERISTICS
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
Characteristic
V(BR)CEO
50
−
Vdc
Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter-Base Breakdown Voltage (IE = 10 mAdc, IE = 0)
V(BR)EBO
7.0
−
Vdc
Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0)
ICBO
−
0.1
mA
Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)
ICEO
−
0.1
mA
DC Current Gain (Note 2)
(VCE = 10 Vdc, IC = 2.0 mAdc)
(VCE = 2.0 Vdc, IC = 100 mAdc)
hFE1
hFE2
210
90
340
−
−
0.5
−
Collector-Emitter Saturation Voltage (Note 2)
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
0.30
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
250
200
150
100
50
RqJA = 833°C/W
0
−50
IC/IB = 10
0.25
0.20
150°C
0.15
0.10
25°C
−55°C
0.05
0
0
50
100
150
0.0001
0.001
0.01
0.1
TA, AMBIENT TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 1. Derating Curve
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1
450
VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V)
150°C (10 V)
hFE, DC CURRENT GAIN
400
150°C (2 V)
350
300
25°C (10 V)
250
25°C (2 V)
200
−55°C (10 V)
150
−55°C (2 V)
100
50
0
IC/IB = 10
0.95
−55°C
0.85
25°C
0.75
0.65
150°C
0.55
0.45
0.35
0.25
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
www.onsemi.com
2
1
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
1.2
1 mA
TA = 25°C
1.0
10 mA
IC = 100 mA
50 mA
0.8
0.6
0.4
0.2
500 mA
0
0.000001
0.00001
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IB, BASE CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Collector Saturation Region
6.0
Cobo, OUTPUT CAPACITANCE (pF)
18
17
16
15
14
Cibo (pF)
13
12
11
10
9
8
7
0
1
2
3
4
5
6
5.5
5.0
4.5
4.0
Cobo (pF)
3.5
3.0
2.5
2.0
1.5
1.0
0
5
10
15
20
25
30
Veb, EMITTER BASE VOLTAGE (V)
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
1
IC, COLLECTOR CURRENT (A)
Cibo, INPUT CAPACITANCE (pF)
VBE(on), BASE−EMITTER TURN ON VOLTAGE (V)
MSD1819A−RT1G, NSVMSD1819A−RT1G
1.0 ms
100 ms
0.1
10 ms
1.0 s
0.01
1
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area
www.onsemi.com
3
100
35
40
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX MG
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
CANCELLED
STYLE 6:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 7:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
98ASB42819B
SC−70 (SOT−323)
STYLE 11:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
