SNSS30201MR6T1G

NSS30201MR6T1G, SNSS30201MR6T1G 30 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 30 VOLTS 3.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 100 mW TSOP−6 CASE 318G STYLE 6 COLLECTOR 1, 2, 5, 6 Features  AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  3 BASE Site and Control Change Requirements These are Pb−Free Devices* 4 EMITTER DEVICE MARKING VS7 M G G VS7 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† NSS30201MR6T1G TSOP−6 (Pb−Free) 3,000 / Tape & Reel SNSS30201MR6T1G TSOP−6 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 1 1 Publication Order Number: NSS30201MR6/D NSS30201MR6T1G, SNSS30201MR6T1G MAXIMUM RATINGS (TA = 25C) Symbol Max Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5.0 V IC 2.0 A ICM 3.0 A Symbol Max Unit 535 4.3 mW mW/C Rating Collector Current − Continuous Collector Current − Peak THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C PD (Note 1) Thermal Resistance, Junction−to−Ambient RqJA (Note 1) Total Device Dissipation TA = 25C Derate above 25C PD (Note 2) Thermal Resistance, Junction−to−Ambient RqJA (Note 2) Thermal Resistance, Junction−to−Lead #1 RqJL (Note 1) RqJL (Note 2) 110 50 Total Device Dissipation (Single Pulse < 10 s) PDsingle (Notes 2 and 3) 1.75 TJ, Tstg −55 to +150 Junction and Storage Temperature Range 234 1.180 9.4 106 C/W W mW/C C/W C/W C/W W C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 with 1 oz and 3.9 mm2 of copper area. 2. FR−4 with 1 oz and 645 mm2 of copper area. 3. Refer to Figure 8. http://onsemi.com 2 NSS30201MR6T1G, SNSS30201MR6T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 30 − − 50 − − 5.0 − − − − 0.1 − − 0.1 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO Collector−Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 V, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = 30 V) ICES Emitter Cutoff Current (VEB = 4.0 V) IEBO − 0.1 V V V mA mA mA ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = 1.0 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) Collector −Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 1.0 mA) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz fT Output Capacitance (f = 1.0 MHz) Cobo 4. Pulsed Condition: Pulse Width  300 msec, Duty Cycle  2%. http://onsemi.com 3 300 300 200 − 500 − − 900 − − − − 0.10 0.06 0.05 0.200 0.125 0.075 − − 1.1 − − 1.1 200 300 − − − 15 V V V MHz pF NSS30201MR6T1G, SNSS30201MR6T1G 1.0 1.0 0.9 0.8 0.7 0.8 0.7 IC = 1 A 0.6 VCE(sat) (V) VCE(sat) (V) 0.9 IC = 2 A 0.5 0.4 0.3 0 0.5 Ic/Ib = 100 0.4 0.3 IC = 500 mA 0.2 0.1 0.6 Ic/Ib = 10 0.2 0.1 IC = 100 mA 0.001 0.01 Ib (A) 0.1 0 0.2 0.001 2 1.2 VCE = 5 V VCE = 5 V +125C 1.0 +25C hFE VBE(on) (V) 500 400 300 1 Figure 2. VCE (sat) versus Ic 800 600 0.1 Ic (A) Figure 1. VCE (sat) versus Ib 700 0.01 −55C 0.8 0.6 0.4 −55C +25C +125C 200 0.2 100 0 0.001 0.01 1 0.1 0 2 0.001 Ic (A) 1 2 Figure 4. VBE(on) versus Ic 10.00 1.0 IC COLLECTOR CURRENT (A) 1.2 VBE (sat) (V) 0.1 Ic (A) Figure 3. hFE versus Ic Ic/Ib = 10 0.8 Ic/Ib = 100 0.6 0.4 0.2 0 0.01 0.001 0.01 0.1 1 2 Ic (A) 3.0 1.00 1 ms 10 ms 100 ms 0.10 1s SINGLE PULSE Tamb = 25C 0.01 0.10 1.00 10.00 VCE(sat) (V) Figure 5. VBE(sat) versus Ic Figure 6. Safe Operating Area http://onsemi.com 4 dc 100.00 NSS30201MR6T1G, SNSS30201MR6T1G fT, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 1000 100 10 1 10 100 1000 IC, COLLECTOR CURRENT (mA) r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 7. fT (MHZ) versus IC (mA) VCE = 5.0 V 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 8. Normalized Thermal Response http://onsemi.com 5 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE V 1 SCALE 2:1 D H ÉÉ ÉÉ 6 E1 1 NOTE 5 5 2 L2 4 GAUGE PLANE E 3 L b SEATING PLANE C DETAIL Z e DIM A A1 b c D E E1 e L L2 M c A 0.05 M DATE 12 JUN 2012 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. A1 DETAIL Z MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC 10° − STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 2: PIN 1. EMITTER 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. BASE 2 6. COLLECTOR 2 STYLE 3: PIN 1. ENABLE 2. N/C 3. R BOOST 4. Vz 5. V in 6. V out STYLE 4: PIN 1. N/C 2. V in 3. NOT USED 4. GROUND 5. ENABLE 6. LOAD STYLE 5: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 7: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. N/C 5. COLLECTOR 6. EMITTER STYLE 8: PIN 1. Vbus 2. D(in) 3. D(in)+ 4. D(out)+ 5. D(out) 6. GND STYLE 9: PIN 1. LOW VOLTAGE GATE 2. DRAIN 3. SOURCE 4. DRAIN 5. DRAIN 6. HIGH VOLTAGE GATE STYLE 10: PIN 1. D(OUT)+ 2. GND 3. D(OUT)− 4. D(IN)− 5. VBUS 6. D(IN)+ STYLE 11: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1/GATE 2 STYLE 12: PIN 1. I/O 2. GROUND 3. I/O 4. I/O 5. VCC 6. I/O STYLE 13: PIN 1. GATE 1 2. SOURCE 2 3. GATE 2 4. DRAIN 2 5. SOURCE 1 6. DRAIN 1 STYLE 14: PIN 1. ANODE 2. SOURCE 3. GATE 4. CATHODE/DRAIN 5. CATHODE/DRAIN 6. CATHODE/DRAIN STYLE 15: PIN 1. ANODE 2. SOURCE 3. GATE 4. DRAIN 5. N/C 6. CATHODE STYLE 16: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 17: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR GENERIC MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 XXXAYWG G 1 6X 3.20 XXX A Y W G 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB14888C TSOP−6 1 IC 0.95 XXX MG G = Specific Device Code =Assembly Location = Year = Work Week = Pb−Free Package STANDARD XXX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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