SS13FL

SS13FL, SS14FL Surface Mount Schottky Barrier Rectifier Features • • • • • Ultra Thin Profile − Maximum Height of 1.08 mm UL Flammability 94V−0 Classification MSL 1 Green Mold Compound These Devices are Pb−Free, Halogen Free Free and are RoHS Compliant www.onsemi.com 1 Cathode 2 Anode Schottky Barrier Rectifier Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Value SS13FL SS14FL Unit Peak Reverse Voltage 30 40 V Reverse Voltage 30 40 V Parameter Symbol VRRM VR IF(AV) Average Rectified Current at TA = 75°C 1.0 IFSM Non−Repetitive Peak Forward Surge Current at t = 8.3 ms 40 A Operating Junction Temperature Range −55 to +125 °C Storage Temperature Range −55 to +125 °C TJ TSTG SOD−123F CASE 425AD MARKING DIAGRAMS A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. &Y &ZG3&G Band Indicates Cathode &Y &Z G3 &G = Binary Calendar Year Coding Scheme = Assembly Plant Code = Specific Device Code = Single Digit Weekly Data Code &Y &ZG4&G Band Indicates Cathode &Y &Z G4 &G = Binary Calendar Year Coding Scheme = Assembly Plant Code = Specific Device Code = Single Digit Weekly Data Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 June, 2018 − Rev. 2 1 Publication Order Number: SS14FL/D SS13FL, SS14FL THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 1) Symbol Value Unit YJL Typical Thermal Characteristics, Junction−to−Lead (Note 2) Characteristic 25 °C/W RqJA Typical Thermal Resistance, Junction−to−Ambient 140 °C/W 1. Per JESD51−3 recommended thermal test board. Device mounted on FR−4 PCB, board size = 76.2 mm x 114.3 mm. 2. Thermocouple soldered at cathode lead. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol BVR Reverse Breakdown Voltage Conditions IR = 500 mA Min Typ Max Unit SS13FL 30 − − V SS14FL 40 − − VF Forward Voltage IF = 1.0 A − − 0.55 V IR Reverse Leakage Current VR = VRRM − − 30 mA Trr Reverse Recovery Time IF = 0.5 A, IR = 1 A, Irr = 0.25 A SS13FL − 5.875 − ns SS14FL − 5.695 − − 60 − CJ Junction Capacitance VR = 0 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Mark Package Shipping† SS13FL G3 SOD−123F (Pb−Free/Halogen Free) 3000 / Tape & Reel SS14FL G4 SOD−123F (Pb−Free/Halogen Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 SS13FL, SS14FL TYPICAL PERFORMANCE CHARACTERISTICS 104 Reverse Current (mA) Average Forward Rectified Current (A) 1 0.75 0.5 SINGLE PHASE HALF WAVE 60Hz RESTSTIVE OR INDUCTIVE LOAD P.C.B MOUNTED ON 0.2 x 0.2 (5.0 x 5.0 mm) COPPER PAD AREAS 0.25 0 0 25 50 75 100 125 150 10 25°C 1 0 20 60 40 Lead Temperature (5C) VR, Reverse Voltage (V) Figure 1. Forward Current Derating Curve Figure 2. Typical Reverse Characteristics 1000 20 100 20 − 40 V Instantaneous Forward Current (A) Capacitance (pF) 75°C 102 0.1 175 125°C 103 60 V 100 V 10 TJ = 25°C 0.1 0 10 20 30 20 − 40 V 100 V 1.0 0.1 40 60 V 10 TJ = 25°C Pulse Width = 300 ms 1 % Duty Cycle .5 .7 .8 .9 1.1 1.3 1.5 1.7 1.9 VR, Reverse Voltage (V) Instantaneous Forward Voltage (V) Figure 3. Typical Junction Characteristics Figure 4. Typical Instantaneous Forward Characteristics www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123FL CASE 425AD ISSUE A DATE 04 AUG 2017 SCALE 4:1 DOCUMENT NUMBER: DESCRIPTION: 98AON13725G SOD−123FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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