SS9013
SS9013
1W Output Amplifier of Potable Radios in
Class B Push-pull Operation.
•
•
•
•
High total power dissipation. (PT=625mW)
High Collector Current. (IC=500mA)
Complementary to SS9012
Excellent hFE linearity.
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
40
Units
V
VCEO
VEBO
Collector-Emitter Voltage
20
V
Emitter-Base Voltage
5
IC
V
Collector Current
500
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC =100µA, IE =0
Min.
40
BVCEO
Collector-Emitter Breakdown Voltage
IC =1mA, IB =0
20
BVEBO
Emitter-Base Breakdown Voltage
IE =100µA, IC =0
5
ICBO
Collector Cut-off Current
VCB =25V, IE =0
IEBO
Emitter Cut-off Current
VEB =3V, IC =0
hFE1
hFE2
DC Current Gain
VCE =1V, IC =50mA
VCE =1V, IC =500mA
Typ.
Max.
Units
V
V
V
64
40
100
nA
100
nA
120
120
202
VCE (sat)
Collector-Emitter Saturation Voltage
IC =500mA, IB =50mA
0.16
0.6
V
VBE (sat)
Base-Emitter Saturation Voltage
IC =500mA, IB =50mA
0.91
1.2
V
VBE (on)
Base-Emitter On Voltage
VCE =1V, IC =10mA
0.67
0.7
V
0.6
hFE Classification
Classification
D
E
F
G
H
hFE1
64 ~ 91
78 ~ 112
96 ~ 135
112 ~ 166
144 ~ 202
©2002 Fairchild Semiconductor Corporation
Rev. A4, November 2002
SS9013
Typical Characteristics
IB = 160µA
IC [mA], COLLECTOR CURRENT
18
1000
IB = 140µA
VCE = 1V
16
IB = 120µA
14
IB = 100µA
hFE, DC CURRENT GAIN
20
12
10
IB = 80µA
8
IB = 60µA
6
IB = 40µA
4
100
10
IB = 20µA
2
0
1
0
10
20
30
40
50
1
VCE [V], COLLECTOR-EMITTER VOLTAGE
1000
VBE (sat)
100
VCE (sat)
10
1000
10000
IC [mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
©2002 Fairchild Semiconductor Corporation
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
VBE(sat), V CE(sat)[mV], SATURATION VOLTAGE
IC = 10 IB
100
1000
10000
Figure 2. DC current Gain
10000
10
100
IC [mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
1
10
1000
VCE = 6V
100
10
1
1
10
100
1000
10000
IC [mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
Rev. A4, November 2002
SS9013
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A4, November 2002
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
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Across the board. Around the world.™
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
Product Folder - Fairchild P/N SS9013 - NPN Epitaxial Silicon Transistor
Page 1 of 3
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SS9013
NPN Epitaxial Silicon Transistor
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Quality and reliability
High Total Power Dissipation: (PT = 625mW)
High Collector Current : (IC=-500mA)
Complementary to SS9012
Excellent hFE linearity.
e-mail this datasheet
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Applications
1W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
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Product status/pricing/packaging
Product
Product status
SS9013FBU
Full Production
SS9013FTA
Full Production
Pb-free Status
mhtml:file://C:\TEMP\SS9013FTA.mht
Pricing*
Package type
Leads
Packing method
Package Marking Convention**
$0.0265
TO-92
3
BULK
Line 1: S9013 Line 3: F-&3
$0.0316
TO-92
3
AMMO
Line 1: S9013 Line 3: F-&3
18-Aug-2007
Product Folder - Fairchild P/N SS9013 - NPN Epitaxial Silicon Transistor
Page 2 of 3
SS9013FTF
Full Production
$0.0265
TO-92
3
TAPE REEL
Line 1: S9013 Line 3: F-&3
SS9013GBU
Full Production
$0.0265
TO-92
3
BULK
Line 1: S9013 Line 3: G-&3
SS9013GTA
Full Production
$0.0265
TO-92
3
AMMO
Line 1: S9013 Line 3: G-&3
SS9013HBU
Full Production
$0.0265
TO-92
3
BULK
Line 1: S9013 Line 3: H-&3
SS9013HTA
Full Production
$0.0265
TO-92
3
AMMO
Line 1: S9013 Line 3: H-&3
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please
contact a Fairchild distributor to obtain samples
Indicates product with Pb-free second-level interconnect. For more information click here.
Package marking information for product SS9013 is available. Click here for more information .
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Models
Package & leads
Condition
Temperature range
Software version
Revision date
9.2
Feb 1, 2002
PSPICE
TO-92-3
Electrical
-25°C to 125°C
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18-Aug-2007
Product Folder - Fairchild P/N SS9013 - NPN Epitaxial Silicon Transistor
Page 3 of 3
Qualification Support
Click on a product for detailed qualification data
Product
SS9013FBU
SS9013FTA
SS9013FTF
SS9013GBU
SS9013GTA
SS9013HBU
SS9013HTA
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© 2007 Fairchild Semiconductor
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