MURHD560T4G,
SURHD8560T4G,
MURHD560W1T4G,
SURHD8560W1T4G,
SURHD8560T4G-VF01
600 V, 5 A Power Rectifier
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ULTRAFAST RECTIFIER
5.0 AMPERES
600 VOLTS
Features and Benefits
•
•
•
•
•
•
Ultrafast 30 Nanosecond Recovery Times
175°C Operating Junction Temperature
High Temperature Glass Passivated Junction
High Voltage Capability to 600 Volts
SURHD8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Power Supplies
• Inverters
• Free Wheeling Diodes
Mechanical Characteristics
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 0.4 g (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Ratings:
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 8000 V)
DPAK
CASE 369C
STYLES 3, 8
1
4
3
1
4
3
STYLE 3
STYLE 8
MARKING DIAGRAMS
AYWW
AYWW
UH560G
560W1G
STYLE 3
UH560
560W1
A
Y
WW
G
STYLE 8
= MURHD560T4
= MURHD560W1T4
= Assembly Location
= Year
= Work Week
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
ORDERING INFORMATION
Package
Shipping†
MURHD560T4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
SURHD8560T4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
MURHD560W1T4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
SURHD8560W1T4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
SSURHD8560W1T4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
SSURHD8560T4G−
VF01
DPAK
(Pb−Free)
2,500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
June, 2017 − Rev. 10
1
Publication Order Number:
MURHD560/D
MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G,
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
600
V
Average Rectified Forward Current
(Rated VR, TC = 159°C)
IF(AV)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Operating Junction and Storage Temperature Range
TJ, Tstg
5.0
50
−65 to +175
A
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance, Junction to Case
RqJC
2.5
°C/W
Maximum Thermal Resistance, Junction to Ambient (Note 1)
RqJA
49.5
°C/W
Value
Unit
1. Rating applies when surface mounted on a 1.5 mm FR4 PC board with a 1 oz. thick, 700
mm2
Cu area.
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 5.0 Amps, TC = 25°C)
(IF = 5.0 Amps, TC = 125°C)
VF
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 25°C)
(Rated dc Voltage, TC = 125°C)
IR
Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25°C)
trr
2.7
1.65
10
70
30
V
mA
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G,
100
IF, FORWARD CURRENT (AMPS)
IF, FORWARD CURRENT (AMPS)
100
150°C
10
125°C
100°C
1
25°C
0.1
0.01
0
1.0
0.5
2.5
2.0
1.5
125°C
25°C
0.1
0
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
6.0
IR, MAXIMUM REVERSE CURRENT (AMPS)
1.0E−3
IR, REVERSE CURRENT (AMPS)
150°C
125°C
1.0E−5
150°C
1.0E−4
100°C
1.0E−6
125°C
100°C
1.0E−5
1.0E−7
1.0E−6
1.0E−8
0
100
200
500
400
300
25°C
1.0E−7
25°C
600
1.0E−8
0
100
200
400
300
500
600
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
100
PFO, AVERAGE POWER DISSIPATION
(WATTS)
20
90
C, CAPACITANCE (pF)
5.0
4.0
3.0
Figure 2. Maximum Forward Voltage
1.0E−4
80
70
60
50
40
30
20
10
0
2.0
1.0
VF, MAXIMUM FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1.0E−9
100°C
1
0.01
3.0
150°C
10
0
25
50
75
100
125
150
175
200
TJ = 175°C
15
SQUARE
WAVE
10
dc
5
0
0
1
2
3
4
5
6
7
VR, REVERSE VOLTAGE (VOLTS)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Typical Capacitance
Figure 6. Forward Power Dissipation
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3
8
9
10,000
RqJC = 2.5°C/W
TJ = 175°C
dc
8
I FSM , NON-REPETITIVE SURGE CURRENT (A)
IF, AVERAGE FORWARD CURRENT (AMPS)
MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G,
7
6
SQUARE WAVE
5
4
3
2
1
0
100
110
120
130
140
150
160
170
1,000
180
100
10
100
10
1,000
10,000
TC, CASE TEMPERATURE (°C)
tp, SQUARE WAVE PULSE DURATION (ms)
Figure 7. Current Derating
Figure 8. Typical Non−Repetitive Surge
Current
R(t), TRANSIENT THERMAL RESISTANCE
* Typical performance based on a limited sample size. ON Semiconductor
does not guarantee ratings not listed in the Maximum Ratings table.
10
0.5
1
0.2
0.1
0.05
0.1
0.01
P(pk)
t1
Single Pulse
t2
DUTY CYCLE, D = t1/t2
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
t, TIME (s)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 9. Thermal Response, Junction to Case
100
10
1
0.5
0.2
0.1
0.05
0.01
P(pk)
t1
0.1
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1.0
t, TIME (s)
Figure 10. Thermal Response, Junction to Ambient
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4
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
4
1 2
DATE 21 JUL 2015
3
SCALE 1:1
A
E
b3
C
A
B
c2
4
L3
Z
D
1
L4
2
3
NOTE 7
b2
e
c
SIDE VIEW
b
0.005 (0.13)
TOP VIEW
H
DETAIL A
M
BOTTOM VIEW
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 9:
STYLE 10:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
3. RESISTOR ADJUST
3. CATHODE
4. CATHODE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
6.17
0.243
SCALE 3:1
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
XXXXXX
A
L
Y
WW
G
3.00
0.118
1.60
0.063
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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