STD5406NT4G

NTD5406N, STD5406N Power MOSFET 40 V, 70 A, Single N−Channel, DPAK Features • • • • • Low RDS(on) High Current Capability Low Gate Charge STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) TYP ID MAX (Note 1) 40 V 8.7 mΩ @ 10 V 70 A D Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits N−Channel G MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter S Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 70 A Continuous Drain Current − RJC Steady State Power Dissipation − RJC Steady State TC = 25°C Continuous Drain Current − RJA (Note 1) Steady State TA = 25°C Power Dissipation − RJA (Note 1) Steady State TC = 25°C TC = 125°C PD 100 ID 12.2 tp = 10 s Operating Junction and Storage Temperature Source Current (Body Diode) Pulsed Single Pulse Drain−to Source Avalanche Energy − (VDD = 50 V, VGS = 10 V, IPK = 30 A, L = 1 mH, RG = 25 ) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) W 1 AYWW 54 06NG A PD 3.0 W IDM 150 A TJ, TSTG −55 to 175 °C IS 63.5 A EAS 450 mJ TL 260 °C THERMAL RESISTANCE RATINGS (Note 1) Symbol Max Unit Junction−to−Case (Drain) RθJC 1.5 °C/W Junction−to−Ambient (Note 1) RθJA 49 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). November, 2016 − Rev. 8 3 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 DPAK CASE 369C STYLE 2 7.0 TA = 25°C Parameter 1 2 40 TA = 125°C Pulsed Drain Current 4 1 A Y WW 5406N G = Assembly Location* = Year = Work Week = Specific Device Code = Pb−Free Device * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping† NTD5406NT4G DPAK (Pb−Free) 2500 / Tape & Reel STD5406NT4G* DPAK (Pb−Free) 2500 / Tape & Reel STD5406NT4G−VF01 DPAK (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTD5406N/D NTD5406N, STD5406N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V 42 IDSS VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 1.0 TJ = 100°C 10 IGSS VDS = 0 V, VGS = ±30 V VGS(TH) VGS = VDS, ID = 250 A ±100 A nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ 1.5 3.5 −7.0 RDS(on) gFS V mV/°C VGS = 10 V, ID = 30 A 8.7 10 VGS = 5.0 V, ID = 10 A 13.2 17 VGS = 10 V, ID = 10 A 19 m S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = 32 V 1375 2500 370 700 160 300 Total Gate Charge QG(TOT) 45 Threshold Gate Charge QG(TH) 2.0 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 10 V, VDS = 32 V, ID = 30 A pF nC 5.4 20 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) ns 7.2 VGS = 10 V, VDD = 32 V, ID = 30 A, RG = 2.5  tf 57 30 67 SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) ns 15 VGS = 5.0 V, VDD = 20 V, ID = 30 A, RG = 2.5  tf 147 20 29 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.82 TJ = 125°C 0.67 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 46 VGS = 0 V, dISD/dt = 100 A/s, IS = 10 A QRR 1.1 V ns 24 22 65 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTD5406N, STD5406N TYPICAL PERFORMANCE CURVES VGS = 7 V to 10 V 80 TJ = 25°C 6V 70 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 80 5V 60 4.8 V 50 4.6 V 40 4.4 V 30 4.2 V 20 4V 10 3.8 V 3.6 V 0 0 2 1 3 5 4 6 8 7 9 VDS ≥ 10 V 70 60 50 40 30 TJ = 100°C 20 TJ = 25°C 10 TJ = −55°C 0 10 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 3 5 6 7 1 2 4 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 0.03 ID = 30 A TJ = 25°C 0.025 0.02 0.015 0.01 0.005 3 5 4 7 6 8 9 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE () Figure 1. On−Region Characteristics 0.020 TJ = 25°C 0.018 0.016 VGS = 5 V 0.014 0.012 0.010 VGS = 10 V 0.008 0.006 0.004 10 20 50 40 60 Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate−to−Source Voltage 10000 2 VGS = 0 V ID = 10 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 30 ID, DRAIN CURRENT (AMPS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1.8 8 1.6 1.4 1.2 1 1000 TJ = 175°C 100 10 TJ = 100°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 1 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 20 NTD5406N, STD5406N TYPICAL PERFORMANCE CURVES VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 3000 12 VDS = 0 V VGS = 0 V Ciss TJ = 25°C 2400 Crss 1800 Ciss 1200 Coss 600 0 10 Crss 0 5 5 VGS VDS 10 15 20 25 30 35 36 QT 9 QGS 18 QGD 9 ID = 30 A TJ = 25°C 0 10 30 20 40 QG, TOTAL GATE CHARGE (nC) 0 40 0 50 Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge Figure 7. Capacitance Variation 1000 30 100 IS, SOURCE CURRENT (AMPS) VDS = 32 V ID = 30 A VGS = 10 V tf tr td(off) 10 td(on) 1 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V TJ = 25°C 25 20 15 10 5 0 0.4 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.5 0.7 0.6 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) VGS 3 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 27 VDS 6 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 3600 VGS = 10 V SINGLE PULSE TC = 25°C 100 10 s 100 s 10 1 ms 10 ms dc 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 1 NTD5406N, STD5406N r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL PERFORMANCE CURVES D = 0.5 1 0.2 0.1 0.1 P(pk) 0.05 0.02 0.01 t1 SINGLE PULSE 0.01 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 t, TIME (s) Figure 12. Thermal Response www.onsemi.com 5 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RJC(t) 0.1 1 NTD5406N, STD5406N PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 c SIDE VIEW b2 e b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD5406N/D