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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
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STK531U369A-E
Intelligent Power Module (IPM)
600 V, 10 A
Overview
This “Inverter IPM” is highly integrated device containing all High
Voltage (HV) control from HV-DC to 3-phase outputs in a single SIP
module (Single-In line Package). Output stage uses IGBT / FRD
technology and implements Under Voltage Protection (UVP) and Over
Current Protection (OCP) with a Fault Detection output flag. Internal
Boost diodes are provided for high side gate boost drive.
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PACKAGE PICTURE
Function
Single control power supply due to Internal bootstrap circuit for high
side pre-driver circuit
All control input and status output are at low voltage levels directly
compatible with microcontrollers
Built-in cross conduction prevention
Externally accessible embedded thermistor for substrate temperature
measurement
The level of the over current protection is adjustable with the external
resistor, “RSD”
SIP29 44x26.5
Certification
UL Recognized (File number : E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Supply voltage
Collector-emitter voltage
Symbol
VCC
VCE
Remarks
P to N, surge < 500 V
P to U, V, W or U, V, W, to N
P, N, U, V, W terminal current
Output current
Io
Output peak current
Pre-driver voltage
Iop
VD1, 2, 3, 4
P, N, U, V, W terminal current at Tc = 100C
P, N, U, V, W terminal current, PW = 1 ms
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
Input signal voltage
VIN
HIN1, 2, 3, LIN1, 2, 3
Ratings
450
600
±10
±5
±20
20
0.3 to VDD
FAULT terminal voltage
VFAULT
FAULT terminal
0.3 to VDD
V
Maximum power dissipation
Pd
IGBT per 1 channel
31.2
Junction temperature
Tj
IGBT, FRD
150
Storage temperature
Tstg
40 to +125
Operating case temperature
Tc
IPM case temperature
20 to +100
Tightening torque
A screw part
*3
0.9
Isolation voltage
Vis
50 Hz sine wave AC 1 minute
*4
2000
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1 : Surge voltage developed by the switching operation due to the wiring inductance between P and N terminal.
*2 : VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS terminal voltage.
*3 : Flatness of the heat-sink should be lower than 0.15 mm.
*4 : Test conditions : AC 2500 V, 1 second.
W
*1
*2
Unit
V
V
A
A
A
V
V
C
C
C
Nm
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 13 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
December 2016 - Rev. 2
1
Publication Order Number :
STK531U369A-E/D
STK531U369A-E
Electrical Characteristics at Tc = 25C, VD1, VD2, VD3, VD4 = 15 V
Parameter
Power output section
Collector-emitter cut-off current
Bootstrap diode reverse current
Collector to emitter saturation
voltage
Symbol
ICE
IR(BD)
VCE(SAT)
Diode forward voltage
VF
Junction to case
thermal resistance
θj-c(T)
θj-c(D)
Test
circuit
Conditions
VCE = 600 V
VR(BD) = 600 V
Upper side
Ic = 10 A
Tj = 25C Lower side
Upper side
Ic = 5 A
Tj = 100C Lower side
Upper side
IF = 10 A
Tj = 25C Lower side
Upper side
IF = 5 A
Tj = 100C Lower side
IGBT
FWD
Fig.1
*1
Fig.2
*1
*1
Fig.3
*1
-
MIN
TYP
MAX
Unit
-
1.9
2.2
1.5
1.7
1.8
2.1
1.4
1.6
-
0.1
0.1
2.4
2.7
2.1
2.4
4.0
6.0
mA
mA
2.5
-
0.08
1.6
-
0.4
4.0
0.8
V
V
C/W
Control (Pre-driver) section
Pre-driver current consumption
ID
VD1, 2, 3 = 15 V
VD4 = 15 V
Fig.4
Vin H
High level Input voltage
HIN1, HIN2, HIN3,
LIN1, LIN2, LIN3 to VSS
Vin L
Low level Input voltage
Input threshold voltage hysteresis
Vinth(hys)
0.5
0.8
*2
IIN+
Logic 1 input leakage current
VIN = +3.3 V
100
IIN
Logic 0 input leakage current
VIN = 0 V
FAULT terminal sink current
IoSD
FAULT : ON / VFAULT = 0.1 V
2
FAULT clear time
FLTCLR
Fault output latch time
18
VCC and VS undervoltage
VCCUV+
10.5
11.1
VSUV+
positive going threshold
VCC and VS undervoltage
VCCUV
10.3
10.9
VSUV
negative going threshold
VCC and VS undervoltage
VCCUVH
0.14
0.2
VSUVH
hysteresis
Over current protection level
ISD
PW = 100 μs, RSD = 0 Ω
Fig.5
18.1
Electric current output signal level
ISO
Io = 10 A
0.31
0.33
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1 : The lower side’s VCE(SAT) and VF include a loss by the shunt resistance
*2 : Input threshold voltage hysteresis indicates a reference value based on the design value of built-in pre-driver IC
mA
V
V
-
V
143
2
80
µA
µA
mA
ms
11.7
V
11.5
V
-
V
22.9
0.35
A
V
Unit
Electrical Characteristics at Tc 25C, VD1, VD2, VD3, VD4 = 15 V, VCC = 300 V, L = 3.9 mH
Parameter
Switching time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Diode reverse recovery energy
Diode reverse recovery time
Reverse bias safe operating area
Symbol
tON
tOFF
Eon
Eoff
Etot
Eon
Eoff
Etot
Erec
trr
RBSOA
Conditions
Test
circuit
Io = 10 A
Io = 5 A
Fig.6
Io = 5 A, Tc = 100C
IF = 5 A, P = 400 V,
Tc = 100C
Io = 20 A, VCE = 450 V
VCE = 400 V, Tc = 100C
Short circuit safe operating area
SCSOA
Reference voltage is “VSS” terminal voltage unless otherwise specified.
MIN
TYP
MAX
0.3
-
0.5
0.8
200
130
330
240
130
370
17
62
Full square
1.2
1.5
-
4
-
-
µs
µJ
µJ
µJ
µJ
µJ
µJ
µJ
ns
µs
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Notes :
1. The pre-drive power supply low voltage protection has approximately 0.2 V of hysteresis and operates as follows.
Upper side : The gate is turned off and will return to regular operation when recovering to the normal voltage, but the latch will continue
till the input signal will turn ‘high’.
Lower side : The gate is turned off and will automatically reset when recovering to normal voltage. It does not depend on input signal voltage.
2. The pre-drive low voltage protection is the feature to protect devices when the pre-driver supply voltage falls due to an operating
malfunction.
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2
STK531U369A-E
Equivalent Block Diagram
VB3(1)
W,VS3(2)
VB2(5)
V,VS2(6)
VB1(9)
U,VS1(10)
P (13)
BD
BD
BD
U.V.
U.V.
U.V.
Shunt-Resistor
N (16)
RCIN(28)
Latch time
TH(29)
Level
Shifter
Level
Shifter
Level
Shifter
HIN1(17)
HIN2(18)
HIN3(19)
Logic
Logic
Logic
LIN1(20)
LIN2(21)
LIN3(22)
FAULT(23)
ISO(24)
VDD(25)
Thermistor
Latch
Over-Current
Latch time is 18 ms to 80 ms
(Automatic reset)
VDD-UnderVoltage
VSS(26)
ISD(27)
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3
STK531U369A-E
Module Pin-Out Description
Pin
Name
Description
1
VB3
High Side Floating Supply Voltage 3
2
W, VS3
Output 3 - High Side Floating Supply Offset Voltage
3
Without Pin
4
Without Pin
5
VB2
High Side Floating Supply voltage 2
6
V,VS2
Output 2 - High Side Floating Supply Offset Voltage
7
Without Pin
8
Without Pin
9
VB1
High Side Floating Supply voltage 1
10
U,VS1
Output 1 - High Side Floating Supply Offset Voltage
11
Without Pin
12
Without Pin
13
P
Positive Bus Input Voltage
14
Without Pin
15
Without Pin
16
N
Negative Bus Input Voltage
17
HIN1
Logic Input High Side Gate Driver - Phase U
18
HIN2
Logic Input High Side Gate Driver - Phase V
19
HIN3
Logic Input High Side Gate Driver - Phase W
20
LIN1
Logic Input Low Side Gate Driver - Phase U
21
LIN2
Logic Input Low Side Gate Driver - Phase V
22
LIN3
Logic Input Low Side Gate Driver - Phase W
23
FAULT
Fault output
24
ISO
Current monitor output
25
VDD
+15 V Main Supply
26
VSS
Negative Main Supply
27
ISD
Over current detection and setting
28
RCIN
Fault clear time setting output
29
TH
Thermistor output
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4
STK531U369A-E
Test Circuit
(The tested phase : U+ shows the upper side of the U phase and U- shows the lower side of the U phase.)
ICE / IR(BD)
M
N
U+
13
10
M
N
U(BD)
9
26
V+
13
6
W+
13
2
V(BD)
5
26
U10
16
V6
16
W2
16
9
M
A
ICE
VD1=15V
10
5
W(BD)
1
26
VD2=15V
6
VCE
1
VD3=15V
2
25
VD4=15V
26
N
Fig.1
VCE(SAT) (Test by pulse)
M
N
m
U+
13
10
17
V+
13
6
18
W+
13
2
19
U10
16
20
V6
16
21
9
W2
16
22
M
VD1=15V
10
5
VD2=15V
6
V
Ic
1
VD3=15V
VCE(SAT)
2
25
VD4=15V
5V
m
26
27
N
Fig.2
VF (Test by pulse)
M
M
N
U+
13
10
V+
13
6
W+
13
2
U10
16
V6
16
W2
16
V
N
Fig.3
ID
M
N
VD1
9
10
VD2
5
6
VD3
1
2
VD4
25
26
Fig.4
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5
VF
IF
STK531U369A-E
■ ISD
9
Input signal
(0 to 5 V)
10
VD1=15V
10
5
VD2=15V
6
Io
1
VD3=15V
2
25
Io
VD4=15V
ISD
Input signal
20
26
27
100 μs
16
Fig.5
Switching time (The circuit is a representative example of the lower side U phase.)
9
Input signal
(0 to 5 V)
13
VD1=15V
10
5
VD2=15V
6
90%
Io
10
1
VCC
CS
VD3=15V
2
25
10%
tON
VD4=15V
tOFF
Input signal
Io
20
26
27
16
Fig.6
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6
STK531U369A-E
Input / Output Timing Chart
VBS under voltage protection reset signal
ON
HIN1,2,3
OFF
LIN1,2,3
*2
VDD
VDD under voltage protection reset signal
*3
VB1,2,3
VBS under voltage protection reset signal
*4
-------------------------------------------------------ISD operation current level-------------------------------------------------------
N terminal
(BUS line)
current
FAULT terminal
voltage
(at pulled-up)
ON
*1
Upper
U, V, W
OFF
*1
Lower
U ,V, W
Utmatically reset after protection
(18ms to 80ms)
Fig. 7
Notes
*1 : Diagram shows the prevention of shoot-through via control logic. More dead time to account for switching delay
needs to be added externally.
*2 : When VDD decreases all gate output signals will go low and cut off all of 6 IGBT outputs. When VDD rises the
operation will resume immediately.
*3 : When the upper side gate voltage at VB1, VB2 and VB3 drops only, the corresponding upper side output is turned
off. The outputs return to normal operation immediately after the upper side gate voltage rises.
*4 : In case of over current detection, all IGBT’s are turned off and the FAULT output is asserted. Normal operation
resumes in 18 to 80 ms after the over current condition is removed.
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7
STK531U369A-E
Logic level table
P(13)
INPUT
Upper
IGBT
HIN1,2,3
(17,18,19)
IC
Driver
LIN1,2,3
(20,21,22)
U,V,W
(10,6,2)
Lower
IGBT
OUTPUT
HIN
LIN
OCP
Upper
IGBT
Lower
IGBT
U,V,W
FAULT
H
L
OFF
ON
OFF
P
OFF
L
H
OFF
OFF
ON
N
OFF
L
L
OFF
OFF
OFF
High
Impedance
OFF
H
H
OFF
OFF
OFF
High
Impedance
OFF
X
X
ON
OFF
OFF
High
Impedance
ON
N(16)
Fig. 8
Sample Application Circuit
STK531U369A-E
VB1 : 9
P : 13
U,VS1 : 10
VCC
CB
VD1
CB
VD2
CB
VD3
CS1
CS2
VB2 : 5
V,VS2 : 6
N : 16
VB3 : 1
W,VS3 : 2
RCIN : 28
U,VS1 : 10
HIN1 : 17
HIN2 : 18
HIN3 : 19
Control
Circuit
(5V)
LIN1 : 20
LIN2 : 21
LIN3 : 22
V,VS2 : 6
ISO : 24
FAULT : 23
TH : 29
VDD : 25
CD
VSS : 26
W,VS3 : 2
RP
RP
VD=15V
ISD : 27
RSD
Fig.9
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8
STK531U369A-E
Recommended Operating Condition
Item
Supply voltage
Pre-driver supply voltage
Symbol
Conditions
VCC
P to N
VD1, 2, 3
VB1 to U, VB2 to V, VB3 to W
VD4
VDD to VSS
*1
PWM frequency
fPWM
Dead time
DT
Turn-off to Turn-on
Allowable input pulse width
PWIN
ON and OFF
Tightening torque
‘M3’ type screw
MIN
TYP
MAX
Unit
V
0
280
450
12.5
15
17.5
13.5
15
16.5
V
1
-
20
kHz
2
-
-
μs
1
-
-
μs
0.6
-
0.9
Nm
*1 : Pre-drive power supply (VD4 = 15 ±1.5 V) must have the capacity of Io = 20 mA (DC), 0.5 A (Peak).
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
Usage Precaution
1. This IPM includes bootstrap diode and resistors. Therefore, by adding a capacitor “CB”, a high side drive voltage is generated; each
phase requires an individual bootstrap capacitor. The recommended value of CB is in the range of 1 to 47 μF, however this value needs
to be verified prior to production. If selecting the capacitance more than 47 μF (±20%), connect a resistor (about 20 Ω) in series
between each 3-phase upper side power supply terminals (VB1, 2, 3) and each bootstrap capacitor. When not using the bootstrap
circuit, each upper side pre-drive power supply requires an external independent power supply.
2. It is essential that wirning length between terminals in the snubber circuit be kept as short as possible to reduce the effect of surge
voltages. Recommended value of “CS” is in the range of 0.1 to 10 μF.
3. “ISO” (pin 24) is terminal for current monitor. High current may flow into that course when short-circuiting the “ISO” terminal and “VSS”
terminal. Please do not connect them.
4. “FAULT” (pin 23) is open DRAIN output terminal (Active Low). Pull up resistor is recommended more than 6.8 kΩ.
5. Inside the IPM, a thermistor used as the temperature monitor for internal subatrate is connected between VSS terminal and TH terminal
therefore, an external pull up resistor connected between the TH terminal and an external power supply should be used. The
temperature monitor example application is as follows, please refer the Fig.10, and Fig.11 below.
6. Pull down resistor of 33 kΩ is provided internally at the signal input terminals. An external resistor of 2.2 k to 3.3 kΩ should be added to
reduce the influence of external wiring noise.
7. The over current protection feature is not intended to protect in exceptional fault condition. An external fuse is recommended for safety.
8. The level of the over current protection might be changed from IPM design value when “ISD” terminal and “VSS” terminal are shorted at
external. Be confirm with actual application (“N” terminal and “VSS” terminal are shorted at internal).
9. The level of the over current protection is adjustable with the external resistor “RSD” between “ISD” terminal and “VSS” terminal.
10. When input pulse width is less than 1.0 μs, an output may not react to the pulse. (Both ON signal and OFF signal)
This data shows the example of the application circuit, does not guarantee a design as the mass production set.
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9
STK531U369A-E
The characteristic of thermistor
Parameter
Resistance
B-Constant (25 to 50C)
Temperature Range
Symbol
R25
R100
B
Condition
MIN
99
5.18
4208
Tc = 25C
Tc = 100C
TYP
100
5.38
4250
-
40
MAX
101
5.60
4293
+125
Unit
kΩ
kΩ
K
C
Case Temperature(Tc) - Thermal resistance(RTH)
10000
Thermistor Resistanse, RTH-Kohm
min
typ
1000
max
100
10
1
-40 -30 -20 -10
0
10
20
30
40
50
60
70
80
90
100 110 120 130
Case temperature, Tc-degC
Fig.10 Variation of thermistor resistance with temperature
Case Temperature(Tc) - TH to Vss voltage characteristic
6.00
min
TH - Vss terminal voltage, VTH-V
5.00
typ
max
4.00
3.00
2.00
1.00
0.00
-40 -30 -20 -10
0
10
20
30
40
50
60
70
80
90
100 110 120 130
Case temperature, Tc-degC
Fig.11 Variation of thermistor terminal voltage with temperature
(39 kΩ pull-up resistor, 5 V)
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10
STK531U369A-E
CB capacitor value calculation for bootstrap circuit
Calculate conditions
Parameter
Upper side power supply
Symbol
Value
Unit
VBS
15
V
Total gate charge of output power IGBT at 15 V
QG
89
nC
Upper limit power supply low voltage protection
UVLO
12
V
Upper side power dissipation
IDmax
400
μA
TONmax
-
s
ON time required for CB voltage to fall from 15 V to UVLO
Capacitance calculation formula
Thus, the following formula are true
VBS CB QG IDMAX TONMAX = UVLO CB
therefore,
CB = (QG + IDMAX TONMAX) / (VBS UVLO)
The relationship between TONMAX and CB becomes as follows. CB is recommended to be approximately 3 times the
value calculated above. The recommended value of CB is in the range of 1 to 47 μF, however, this value needs to be
verified prior to production.
CB vs Tonmax
Bootstrap Capacitance CB [uF]
100
10
1
0.1
0.01
0.1
1
10
Tonmax [ms]
Fig. 12 Tonmax - CB characteristic
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11
100
1000
STK531U369A-E
Package Dimensions
unit : mm
The tolerances of length are +/ 0.5 mm unless otherwise specified.
SIP29 44x26.5
CASE 127CH
ISSUE O
44.0
41.0
29.0
( 15.75)
S IP 05 Full
26.5
2 R 1.8
( 24.0)
3.6
missing pin : 3, 4, 7, 8, 11, 12, 14, 15
0.6
1.27
3.2
1.27 = 35.56
0.50
6.20
5.5
28
5.0
29
1
( 35.0)
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12
STK531U369A-E
ORDERING INFORMATION
Device
STK531U369A-E
Package
Shipping (Qty / Packing)
SIP29 44x26.5
(Pb-Free)
11 / Tube
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries
in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other
intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON
Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is
responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters,
including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its
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