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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
STK541UC60C-E
Intelligent Power Module (IPM)
600 V, 10 A
Overview
This “Inverter IPM” is highly integrated device containing all High
Voltage (HV) control from HV-DC to 3-phase outputs in a single SIP
module (Single-In line Package). Output stage uses IGBT / FRD
technology and implements Under Voltage Protection (UVP) and Over
Current Protection (OCP) with a Fault Detection output flag. Internal
Boost diodes are provided for high side gate boost drive.
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Function
Single control power supply due to Internal bootstrap circuit for high
side pre-driver circuit
All control input and status output are at low voltage levels directly
compatible with microcontrollers
Built-in cross conduction prevention
Certification
UL Recognized (File Number : E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Symbol
Supply voltage
VCC
Collector-emitter voltage
VCE
Output current
Io
Conditions
P to N, surge < 500 V
*1
Ratings
Unit
450
V
P to U,V,W or U,V,W to N
600
V
P, N, U,V,W terminal current
±10
A
P, N, U,V,W terminal current at Tc = 100C
±5
A
Output peak current
Iop
P, N, U,V,W terminal current for a Pulse width of 1ms
±20
A
Pre-driver voltage
VD1, 2, 3, 4
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
20
V
Input signal voltage
VIN
HIN1, 2, 3, LIN1, 2, 3
0.3 to 7
V
*2
FAULT terminal voltage
VFAULT
FAULT terminal
0.3 to VDD
V
Maximum power dissipation
Pd
IGBT per channel
22
W
Junction temperature
Tj
IGBT,FRD
150
C
Storage temperature
Tstg
40 to +125
C
Operating substrate temperature
Tc
Tightening torque
IPM case temperature
Case mounting screws
*3
40 to +100
C
0.9
Nm
Isolation Voltage
Vis
50 Hz sine wave AC 1 minute
*4
2000
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1 : Surge voltage developed by the switching operation due to the wiring inductance between “P” and “N” terminal.
*2 : VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS terminal voltage.
*3 : Flatness of the heat-sink should be less than 0.15 mm.
*4 : Test conditions : AC 2500 V, 1 second.
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
December 2016 - Rev. 2
1
Publication Order Number :
STK541UC60C-E/D
STK541UC60C-E
Electrical Characteristics at Tc 25C, VD1, VD2, VD3, VD4 = 15 V
Parameter
Symbol
Conditions
Test
circuit
min
typ
max
Unit
-
-
0.1
mA
mA
Power output section
Collector-emitter cut-off current
ICE
VCE = 600 V
Bootstrap diode reverse current
IR(BD)
VR(BD)
Collector to emitter
saturation voltage
VCE(SAT)
Fig.1
Ic = 10 A
Tj = 25C
Upper side
Ic = 5 A
Tj = 100C
Upper side
IF = 10 A
Tj = 25C
IF = 5 A
Tj = 100C
Upper side
Diode forward voltage
VF
Junction to case
thermal resistance
θj-c(T)
IGBT
θj-c(D)
FRD
Lower side *1
-
-
0.1
-
1.4
2.3
-
1.7
2.6
-
1.3
-
Lower side *1
-
1.5
-
Upper side
-
1.3
2.2
Lower side *1
Fig.2
Fig.3
Lower side *1
-
1.6
2.5
-
1.2
-
-
1.4
-
-
-
5.5
-
-
6.5
V
V
C/W
Control (Pre-driver) section
VD1, 2, 3 = 15 V
Pre-driver power dissipation
ID
High level Input voltage
Vin H
Low level Input voltage
Vin L
Input threshold voltage hysteresis
Vinth(hys)
Logic 0 input leakage current
IIN+
Logic 1 input leakage current
IIN-
FAULT terminal sink current
IoSD
FAULT : ON/VFAULT = 0.1 V
FAULT clear time
FLTCLR
Fault output latch time
VCC and VS undervoltage
positive going threshold
VCC and VS undervoltage
negative going threshold
VCC and VS undervoltage
hysteresis
Over current protection level
VCCUP VSUP
VCCUVH
VSUVHISD
PW = 100 μs
Output level for current monitor
ISO
Io = 10 A
VD4 = 15 V
Fig.4
HIN1, HIN2, HIN3,
LIN1, LIN2, LIN3 to VSS
-
0.08
0.4
-
1.6
4.0
2.5
-
-
mA
V
-
-
0.8
V
0.5
0.8
-
V
VIN = +3.3 V
76
118
160
A
VIN = 0 V
97
150
203
A
-
2
-
mA
6
9
12
ms
10.5
11.1
11.7
V
10.3
10.9
11.5
V
0.14
0.2
-
V
10
-
17
A
0.30
0.33
0.36
V
Unit
VCCUN VSUN
Fig.5
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1 : The lower side’s VCE(SAT) and VF include a loss by the shunt resistance
Electrical Characteristics at Tc 25C, VD1, VD2, VD3, VD4 = 15 V, VCC = 300 V, L = 3.9 mH
Parameter
Symbol
Conditions
Test
circuit
min
typ
max
0.3
0.6
1.3
-
1.0
1.8
-
240
-
J
-
220
-
J
-
460
-
J
Switching Character
Switching time
tON
tOFF
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Io = 10 A
Fig.6
Io = 5 A
Fig.6
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Diode reverse recovery energy
Erec
Diode reverse recovery time
trr
IF = 5 A, P = 400 V,
Tc = 100C
Reverse bias safe operating area
RBSOA
Io = 20 A, VCE = 450 V
Short circuit safe operating area
SCSOA
VCE = 400 V, Tc = 100C
Io = 5 A, Tc = 100C
Fig.6
s
-
300
-
J
-
260
-
J
-
560
-
J
-
17
-
J
-
62
-
ns
-
s
Full square
4
-
Reference voltage is “VSS” terminal voltage unless otherwise specified.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
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2
STK541UC60C-E
Notes
1. The pre-drive power supply low voltage protection has approximately 0.2 V of hysteresis and operates as follows.
Upper side : The gate is turned off and will return to regular operation when recovering to the normal voltage, but the latch will
continue till the input signal will turn ‘high’.
Lower side : The gate is turned off and will automatically reset when recovering to normal voltage. It does not depend on input
signal voltage.
2. The pre-drive low voltage protection is the feature to protect devices when the pre-driver supply voltage falls due to an operating
malfunction.
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3
STK541UC60C-E
Equivalent Block Diagram
VB1(8)
U(9)
VB2(5)
V(6)
VB3(2)
W(3)
P(11)
U.V.
U.V.
U.V.
Shunt Resistor
N (13)
Level
Level
Level
Shifter
Shifter
Shifter
HIN1(14)
HIN2(15)
HIN3(16)
LIN1(17)
Logic
Logic
Logic
LIN2(18)
LIN3(19)
FAULT(20)
ISO(21)
VDD(22)
VSS(23)
Latch
Over-Current
VDD-Under Voltage
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4
Latch Time About 9ms
( Automatic Reset )
STK541UC60C-E
Module Pin-Out Description
Pin
Name
Description
1
Without Pin
2
VB3
High Side Floating Supply Voltage 3
3
W,VS3
Output 3 - High Side Floating Supply Offset Voltage
4
Without Pin
5
VB2
High Side Floating Supply voltage 2
6
V,VS2
Output 2 - High Side Floating Supply Offset Voltage
7
Without Pin
8
VB1
High Side Floating Supply voltage 1
9
U,VS1
Output 1 - High Side Floating Supply Offset Voltage
10
Without Pin
11
P
Positive Bus Input Voltage
12
Without Pin
13
N
Negative Bus Input Voltage
14
HIN1
Logic Input High Side Gate Driver - Phase U
15
HIN2
Logic Input High Side Gate Driver - Phase V
16
HIN3
Logic Input High Side Gate Driver - Phase W
17
LIN1
Logic Input Low Side Gate Driver - Phase U
18
LIN2
Logic Input Low Side Gate Driver - Phase V
19
LIN3
Logic Input Low Side Gate Driver - Phase W
20
FAULT
Fault output
21
ISO
Current monitor output
22
VDD
+15 V Main Supply
23
VSS
Negative Main Supply
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5
STK541UC60C-E
Test Circuit
The tested phase U+ shows the upper side of the U phase and U shows the lower side of the U phase.
■ ICE / IR(BD)
ICE
U+
V+
W+
U-
V-
W-
M
11
11
11
9
6
3
N
9
6
3
13
13
13
8
M
A
VD1=15V
9
5
VD2=15V
6
VCE
2
U(BD)
V(BD)
W(BD)
M
8
5
2
N
23
23
23
VD3=15V
3
22
VD4=15V
23
N
Fig.1
8
■ VCE(SAT) (test by pulse)
M
VD1=15V
9
U+
V+
W+
U-
V-
W-
M
11
11
11
9
6
3
N
9
6
3
13
13
13
m
14
15
16
17
18
19
5
VD2=15V
6
V
Ic
2
VD3=15V
VCE(SAT)
3
22
VD4=15V
m
23
N
Fig.2
■ VF (test by pulse)
M
U+
V+
W+
U-
V-
W-
M
11
11
11
9
6
3
N
9
6
3
13
13
13
V
N
Fig.3
■ ID
VD1
VD2
VD3
VD4
M
8
5
2
22
N
9
6
3
23
ID
A
M
VD*
N
Fig.4
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6
VF
IF
STK541UC60C-E
■ ISD
8
9
VD1=15V
9
Input signal
(0 to 5 V)
5
VD2=15V
6
Io
2
VD3=15V
Io
3
22
ISD
VD4=15V
Input signal
100 μs
17
23
13
Fig.5
■ Switching time (The circuit is a representative example of the lower side U phase.)
8
11
VD1=15V
9
Input signal
(0 to 5 V)
5
VD2=15V
6
9
2
90%
VCC
CS
VD3=15V
3
22
Io
VD4=15V
Io
10%
Input signal
tON
17
23
13
tOFF
Fig.6
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7
STK541UC60C-E
Input / Output Timing Chart
VBS undervoltage protection reset signal
OFF
HIN1,2,3
ON
LIN1,2,3
*2
VDD
VDD undervoltage protection reset voltage
*3
VBS undervoltage protection reset voltage
VB1,2,3
*4
-------------------------------------------------------ISD operation current level-------------------------------------------------------
N terminal
(BUS line)
Current
FAULT terminal
Voltage
(at pulled-up)
ON
*1
Upper
U, V, W
OFF
*1
Lower
U ,V, W
Automatically reset after protection
(typ.9ms)
Fig.7
Notes
*1 : Diagram shows the prevention of shoot-through via control logic. More deadtime to account for switching delay needs to be added
externally.
*2 : If lower VDD drops all gate output signals will go low and cut off all of 6 IGBT outputs. part. When VDD rises the operation will resume
immediately.
*3 : When the upper side gate voltage at VB1, VB2 and VB3 drops only the corresponding upper side output is turned off. The outputs
return to normal operation immediately after the upper side gat voltage rises.
*4 : In case of over current detection all IGBT’s are turned off and the FAULT output is asserted. Normal operation resumes in 6 to 12 ms
after the over current condition is removed.
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8
STK541UC60C-E
Logic level table
P(11)
INPUT
Upper
IGBT
HIN1,2,3
(14,15,16)
IC
Driver
HIN
LIN
OCP
H
L
OFF
OFF
ON
N
OFF
L
H
OFF
ON
OFF
P
OFF
L
L
OFF
OFF
OFF
High
Impedance
OFF
H
H
OFF
OFF
OFF
High
Impedance
OFF
X
X
ON
OFF
OFF
High
Impedance
ON
U,V,W
(9,6,3)
LIN1,2,3
(17,18,19)
OUTPUT
Upper
IGBT
Lower
IGBT
Lower
IGBT
U,V,W
FAULT
N(13)
Fig. 8
Sample Application Circuit
CB
8 9
CB
CB
11
13 14 15 16 17 18 19 20 21 22 23
CS
CD
Control Logic
VCC
VSS
VDD
ISO
FAULT
LIN3
LIN2
LIN1
HIN3
HIN2
HIN1
N
U
VB1
V
5 6
P
2 3
VB2
W
VB3
STK541UC60C-E
VDD=15V
CI
Fig. 9
Recommended Operating Conditions at Ta = 25C
Item
Supply voltage
Pre-driver supply voltage
Symbol
Conditions
VCC
P to N
VD1,2,3
VB1 to U,VB2 to V,VB3 to W
VD4
VDD to VSS
*1
min
typ
max
Unit
V
0
280
450
12.5
15
17.5
13.5
15
16.5
V
PWM frequency
fPWM
1
-
20
kHz
Dead time
DT
Turn-off to turn-on
2
-
-
μs
Allowable input pulse width
PWIN
ON and OFF
1
-
-
μs
Tightening torque
‘M3’ type screw
0.6
-
0.9
Nm
*1 : Pre-drive power supply (VD4 = 15 ±1.5 V) must have the capacity of Io = 20 mA (DC), 0.5A (Peak).
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
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9
STK541UC60C-E
Usage Precaution
1. This IPM includes bootstrap diode and resistors. Therefore, by adding a capacitor “CB”, a high side drive voltage is generated; each
phase requires an individual bootstrap capacitor. The recommended value of CB is in the range of 1 to 47 μF, however this value
needs to be verified prior to production. If selecting the capacitance more than 47 μF (±20%), connect a resistor (about 20 Ω) in series
between each 3-phase upper side power supply terminals (VB1, 2, 3) and each bootstrap capacitor.
When not using the bootstrap circuit, each upper side pre-drive power supply requires an external independent power supply.
2. It is essential that wiring length between terminals in the snubber circuit be kept as short as possible to reduce the effect of surge
voltages. Recommended value of “CS” is in the range of 0.1 to 10 μF.
3. “ISO” (pin 21) is terminal for current monitor. High current may flow into that course when short-circuiting the “ISO” terminal and “VSS”
terminal. Please do not connect them.
4. “FAULT” (pin 20) is open DRAIN output terminal (Active Low). Pull up resistor is recommended more than 6.8 kΩ.
5. Pull up resistor of 100 kΩ is provided internally at the signal input terminals.
6. The over-current protection feature is not intended to protect in exceptional fault condition. An external fuse is recommended for
safety.
7. When input pulse width is less than 1.0 μs, an output may not react to the pulse (Both ON signal and OFF signal).
This data shows the example of the application circuit, does not guarantee a design as the mass production set.
Maximum RMS Output Current / Phase (A)
The characteristic of PWM switching frequency
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
PWM Switching Frequency (kHz)
Fig. 10 Maximum sinusoidal phase current as function of switching frequency
at Tc = 100C, VCC = 400 V
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10
20
STK541UC60C-E
CB capacitor value calculation for bootstrap circuit
Calculate conditions
Parameter
Symbol
Value
Unit
Upper side power supply
VBS
15
V
Total gate charge of output power IGBT at 15 V
QG
89
nC
Upper limit power supply low voltage protection
UVLO
12
V
Upper side power dissipation
IDMAX
400
μA
ON time required for CB voltage to fall from 15V to UVLO
TONMAX
-
s
Capacitance calculation formula
Thus, the following formula are true
VBS CB QG IDMAX TONMAX = UVLO CB
therefore,
CB = (QG + IDMAX TONMAX) / (VBS UVLO)
The relationship between TONMAX and CB becomes as follows. CB is recommended to be approximately 3 times the value calculated
above. The recommended value of CB is in the range of 1 to 47 μF, however, this value needs to be verified prior to production.
CB vs Tonmax
Bootstrap Capacitance CB [uF]
100
10
1
0.1
0.01
0.1
1
10
Tonmax [ms]
Fig. 11 Tonmax - CB characteristic
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11
100
1000
STK541UC60C-E
PACKAGE DIMENSIONS
unit : mm
The tolerances of length are +/ 0.5 mm unless otherwise specified.
missing pin : 1, 4, 7, 10, 12
note2
note3
4DB00
note1
1
23
note 1 : Mark for No.1 pin identification.
note 2 : The form of a character in this
drawing differs from that of IPM.
note 3 : This indicates the lot code.
The form of a character in this
drawing differs from that of IPM.
ORDERING INFORMATION
Device
STK541UC60C-E
Package
Shipping (Qty / Packing)
SIP23 56x21.8
(Pb-Free)
8 / Tube
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries
in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other
intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON
Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is
responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters,
including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its
patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support
systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an
Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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