SZBZX84C39ET1G

BZX84CxxxET1G Series, SZBZX84CxxxET1G Series Zener Voltage Regulators 250 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. www.onsemi.com Specification Features • • • • • • • • 250 mW Rating on FR−4 or FR−5 Board Zener Breakdown Voltage Range − 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (> 16 kV) per Human Body Model Peak Power − 225 W (8 X 20 ms) SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant SOT−23 CASE 318 STYLE 8 3 Cathode MARKING DIAGRAM xxx M G G Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds MAXIMUM RATINGS Symbol Max Unit Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Ppk 225 W Total Power Dissipation on FR−5 Board, (Note 2) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient PD 250 2.0 500 mW mW/°C °C/W 300 2.4 417 mW mW/°C °C/W −65 to +150 °C RqJA Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient PD RqJA Junction and Storage Temperature Range TJ, Tstg 1 xxx M G POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 Rating 1 Anode = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BZX84CxxxET1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZBZX84CxxxET1G SOT−23 (Pb−Free) 3,000 / Tape & Reel BZX84CxxxET3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SZBZX84CxxxET3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 9. 2. FR−5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2003 October, 2016 − Rev. 10 1 Publication Order Number: BZX84C2V4ET1/D BZX84CxxxET1G Series, SZBZX84CxxxET1G Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) Symbol Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF C IF Parameter VZ QVZ I VZ VR IR VF IZT Maximum Temperature Coefficient of VZ Max. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator www.onsemi.com 2 V BZX84CxxxET1G Series, SZBZX84CxxxET1G Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ1 (V) @ IZT1 = 5 mA (Note 4) Device Marking Min Nom Max ZZT1 (W) @ IZT1 = 5 mA BZX84C2V4ET1G BA1 2.2 2.4 2.6 BZX84C2V7ET1G BA2 2.5 2.7 2.9 BZX84C3V0ET1G BA3 2.8 3.0 BZX84C3V3ET1G BA4 3.1 BZX84C3V6ET1G BA5 BZX84C3V9ET1G VZ2 (V) @ IZT2 = 1 mA (Note 4) Min Max ZZT2 (W) @ IZT2 = 1 mA 100 1.7 2.1 100 1.9 2.4 3.2 95 2.1 3.3 3.5 95 3.4 3.6 3.8 BA6 3.7 3.9 BZX84C4V3ET1G BA7 4.0 BZX84C4V7ET1G BA9 4.4 BZX84C5V1ET1G BB1 BZX84C5V6ET1G VZ3 (V) @ IZT3=20 mA (Note 4) Max Reverse Leakage Current qVZ C (pF) (mV/k) @ @ IZT1=5 mA VR = 0 f= Min Max 1 MHz Min Max ZZT3 (W) @ IZT3= 20 mA 600 2.6 3.2 50 50 1.0 −3.5 0 450 600 3.0 3.6 50 20 1.0 −3.5 0 450 2.7 600 3.3 3.9 50 10 1.0 −3.5 0 450 2.3 2.9 600 3.6 4.2 40 5.0 1.0 −3.5 0 450 90 2.7 3.3 600 3.9 4.5 40 5.0 1.0 −3.5 0 450 4.1 90 2.9 3.5 600 4.1 4.7 30 3.0 1.0 −3.5 −2.5 450 4.3 4.6 90 3.3 4.0 600 4.4 5.1 30 3.0 1.0 −3.5 0 450 4.7 5.0 80 3.7 4.7 500 4.5 5.4 15 3.0 2.0 −3.5 0.2 260 4.8 5.1 5.4 60 4.2 5.3 480 5.0 5.9 15 2.0 2.0 −2.7 1.2 225 BB2 5.2 5.6 6.0 40 4.8 6.0 400 5.2 6.3 10 1.0 2.0 −2 2.5 200 BZX84C6V2ET1G BB3 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3.0 4.0 0.4 3.7 185 BZX84C6V8ET1G BB4 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2.0 4.0 1.2 4.5 155 BZX84C7V5ET1G BB5 7.0 7.5 7.9 15 6.9 7.9 80 7.0 8.0 6 1.0 5.0 2.5 5.3 140 BZX84C8V2ET1G BB6 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5.0 3.2 6.2 135 BZX84C9V1ET1G BB7 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6.0 3.8 7.0 130 BZX84C10ET1G BB8 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7.0 4.5 8.0 130 BZX84C11ET1G BB9 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8.0 5.4 9.0 130 BZX84C12ET1G BC1 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8.0 6.0 10 130 BZX84C13ET1G BC2 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8.0 7.0 11 120 BZX84C15ET1G BC3 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13 110 BZX84C16ET1G BC4 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14 105 BZX84C18ET1G BC5 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16 100 BZX84C20ET1G BC6 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18 85 BZX84C22ET1G BC7 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20 85 BZX84C24ET1G BC8 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22 80 Device* VZ2 Below @ IZT2 = 0.1 mA Device Marking Min Nom Max ZZT1 Below @ IZT1 = 2 mA Min Max ZZT3 Below @ IZT3 = 10 mA BZX84C27ET1G BC9 25.1 27 28.9 80 25 28.9 300 25.2 29.3 BZX84C30ET1G BD1 28 30 32 80 27.8 32 300 28.1 BZX84C33ET1G BD2 31 33 35 80 BZX84C36ET1G BD3 34 36 38 90 30.8 35 325 33.8 38 350 BZX84C39ET1G BD4 37 39 41 130 36.7 41 BZX84C43ET1G BK6 40 43 46 150 39.7 BZX84C47ET1G BD5 44 47 50 170 BZX84C51ET1G BD6 48 51 54 BZX84C56ET1G BZX84C62ET1G BD7 52 56 BD8 58 62 BZX84C68ET1G BD9 64 BZX84C75ET1G BE1 70 Device* Min Max Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA V IR @ R (V) mA Min Max C (pF) @ VR =0 f= 1 MHz 45 0.05 18.9 21.4 25.3 70 32.4 50 0.05 21 24.4 29.4 70 31.1 35.4 55 0.05 23.1 27.4 33.4 70 34.1 38.4 60 0.05 25.2 30.4 37.4 70 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 VZ1 Below @ IZT1 = 2 mA ZZT2 Below @ IZT4 = 0.5 mA V IR @ R (V) mA VZ3 Below @ IZT3 = 10 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C * Include SZ-prefix devices where applicable. www.onsemi.com 3 BZX84CxxxET1G Series, SZBZX84CxxxET1G Series 8 100 7 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 VZ @ IZT 10 2 1 0 −1 −2 −3 TYPICAL TC VALUES 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 IZ = 1 mA TJ = 255C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE ( Ω ) 1000 100 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0°C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage www.onsemi.com 4 1.1 1.2 BZX84CxxxET1G Series, SZBZX84CxxxET1G Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS I R , LEAKAGE CURRENT (μA) TA = 25°C 1 V BIAS 100 BIAS AT 50% OF VZ NOM 1 10 1 +150°C 0.1 0.01 10 1 100 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 0.001 + 25°C 0.0001 −55°C 0.00001 0 10 Figure 5. Typical Capacitance 1 0.1 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 100 I Z, ZENER CURRENT (mA) 10 0.01 10 1 0.1 0.01 12 10 TA = 25°C 10 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 ms tr 90 30 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 50 HALF VALUE IRSM/2 @ 20 ms 40 30 tP 20 10 0 0 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) 100 80 Figure 6. Typical Leakage Current TA = 25°C % OF PEAK PULSE CURRENT I Z , ZENER CURRENT (mA) 100 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 20 40 60 t, TIME (ms) Figure 9. 8 × 20 ms Pulse Waveform www.onsemi.com 5 80 90 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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