SZMM3Z18VST1G

DATA SHEET www.onsemi.com Zener Voltage Regulators 300 mW SOD−323 Surface Mount Tight Tolerance Portfolio SOD−323 CASE 477 STYLE 1 MM3ZxxxST1G Series, SZMM3ZxxxST1G Series 1 Cathode This series of Zener diodes is packaged in a SOD−323 surface mount package that has a power dissipation of 300 mW. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand−held portables, and high density PC boards. 2 Anode MARKING DIAGRAM XXMG G Specification Features • Standard Zener Breakdown Voltage Range − 3.3 V to 36 V • Steady State Power Rating of 300 mW • Small Body Outline Dimensions: • • • • • • − 0.067″ x 0.049″ (1.7 mm x 1.25 mm) Low Body Height: 0.035″ (0.9 mm) Package Weight: 4.507 mg/unit ESD Rating of Class 3 (> 16 kV) per Human Body Model Tight Tolerance VZ SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* Mechanical Characteristics: CASE: Void-free, transfer-molded plastic FINISH: All external surfaces are corrosion resistant MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds LEADS: Plated with Pb−Sn or Sn only (Pb−Free) POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 MOUNTING POSITION: Any XX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MM3ZxxxST1G SOD−323 (Pb−Free) 3,000 / Tape & Reel SZMM3ZxxxST1G SOD−323 (Pb−Free) 3,000 / Tape & Reel MM3ZxxxST3G SOD−323 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2015 August, 2021 − Rev. 25 1 Publication Order Number: MM3Z2V4ST1/D MM3ZxxxST1G Series, SZMM3ZxxxST1G Series MAXIMUM RATINGS Rating Symbol Total Device Dissipation FR−4 Board, (Note 1) @ TA = 25°C Derate above 25°C Max Unit 300 2.4 mW mW/°C RqJA 416 °C/W TJ, Tstg −65 to +150 °C PD Thermal Resistance from Junction−to−Ambient Junction and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 printed circuit board, single−sided copper, mounting pad 1 cm2. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types) Parameter Symbol VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF QVZ C I IF VZ VR IR VF IZT Maximum Temperature Coefficient of VZ Zener Voltage Regulator Max. Capacitance @VR = 0 and f = 1 MHz www.onsemi.com 2 V MM3ZxxxST1G Series, SZMM3ZxxxST1G Series ELECTRICAL CHARACTERISTICS (VF = 0.9 Max @ IF = 10 mA for all types) ZZT IZ = IZT @ 10% Mod W Max mA V Min Max C pF Max @ VR = 0 f = 1 MHz Max IR @ VR dVZ/dt (mV/k) @ IZT1 = 5 mA Min Max ZZK IZ = 0.5 mA W Max 5.0 2.29 2.51 1000 100 50 1.0 −3.5 0 450 T3 5.0 2.59 2.81 1000 100 20 1.0 −3.5 0 450 MM3Z3V0ST1G T4 5.0 2.90 3.11 1000 100 10 1.0 −3.5 0 450 MM3Z3V3ST1G T5 5.0 3.32 3.53 1000 95 5.0 1.0 −3.5 0 450 MM3Z3V6ST1G T6 5.0 3.49 3.71 1000 90 5.0 1.0 −3.5 0 450 MM3Z3V9ST1G T7 5.0 3.89 4.16 1000 90 3.0 1.0 −3.5 −2.5 450 MM3Z4V3ST1G T8 5.0 4.17 4.43 1000 90 3.0 1.0 −3.5 0 450 MM3Z4V7ST1G T9 5.0 4.55 4.75 800 80 3.0 2.0 −3.5 0.2 260 MM3Z5V1ST1G TA 5.0 4.98 5.2 500 60 2.0 2.0 −2.7 1.2 225 MM3Z5V6ST1G TC 5.0 5.49 5.73 200 40 1.0 2.0 −2.0 2.5 200 MM3Z6V2ST1G TE 5.0 6.06 6.33 100 10 3.0 4.0 0.4 3.7 185 MM3Z6V8ST1G TF 5.0 6.65 6.93 160 15 2.0 4.0 1.2 4.5 155 MM3Z7V5ST1G TG 5.0 7.28 7.6 160 15 1.0 5.0 2.5 5.3 140 MM3Z8V2ST1G TH 5.0 8.02 8.36 160 15 0.7 5.0 3.2 6.2 135 MM3Z9V1ST1G TK 5.0 8.85 9.23 160 15 0.5 6.0 3.8 7.0 130 MM3Z10VST1G WB 5.0 9.80 10.20 160 15 0.5 6.0 4.5 8.0 130 MM3Z11VST1G WC 5.0 10.78 11.22 160 20 0.1 8.0 5.4 9.0 130 MM3Z12VST1G TN 5.0 11.74 12.24 80 25 0.1 8.0 6.0 10 130 MM3Z13VST1G TQ 5.0 12.91 13.49 160 30 0.1 8.0 7.0 11 120 MM3Z15VST1G TP 5.0 14.34 14.98 80 40 0.1 11 8.8 12.7 130 MM3Z16VST1G TU 5.0 15.85 16.51 80 40 0.05 11.2 10.4 14 105 MM3Z18VST1G TW 5.0 17.56 18.35 80 45 0.05 12.6 12.4 16 100 MM3Z20VST1G U8 5.0 19.48 20.46 100 55 0.05 14.0 14.4 18 85 MM3Z22VST1G WP 5.0 21.54 22.47 100 55 0.05 15.4 16.4 20 85 MM3Z24VST1G WT 5.0 23.72 24.78 120 70 0.05 16.8 18.4 22 80 MM3Z27VST1G WQ 5.0 26.19 27.53 300 80 0.05 18.9 21.4 25.3 70 MM3Z30VST1G WV 5.0 29.19 30.69 300 80 0.05 21.0 24.4 29.4 70 MM3Z33VST1G WR 5.0 32.15 33.79 300 80 0.05 23.2 27.4 33.4 70 MM3Z36VST1G WU 5.0 35.07 36.87 500 90 0.05 25.2 30.4 37.4 70 MM3Z39VST1G WN 2.0 38.22 39.78 500 130 0.05 27.3 33.4 41.2 45 Device Marking Test Current Izt mA MM3Z2V4ST1G T2 MM3Z2V7ST1G Device* Zener Voltage VZ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Include SZ-prefix devices where applicable. www.onsemi.com 3 MM3ZxxxST1G Series, SZMM3ZxxxST1G Series TYPICAL CHARACTERISTICS 1000 TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT , DYNAMIC IMPEDANCE ( Ω ) 1000 100 100 IZ = 1 mA 10 5 mA 1.0 3.0 75°C 1.0 10 150°C 10 0.4 0.5 1.1 0 V BIAS 1 V BIAS 100 BIAS AT 50% OF VZ NOM 10 IR, LEAKAGE CURRENT ( μ A) 1000 TA = 25°C 100 10 1.0 +150°C 0.1 0.01 + 25°C 0.001 −55°C 0.0001 1.0 1.2 Figure 2. Typical Forward Voltage 1000 C, CAPACITANCE (pF) 0°C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE Figure 1. Effect of Zener Voltage on Zener Impedance 25°C 4.0 10 0.00001 VZ, NOMINAL ZENER VOLTAGE (V) 5.0 VZ, NOMINAL ZENER VOLTAGE (V) Figure 3. Typical Capacitance Figure 4. Typical Leakage Current 100 0 10 100 80 10 POWER DISSIPATION (%) I Z , ZENER CURRENT (mA) TA = 25°C 1.0 0.1 0.01 0 2.0 4.0 6.0 VZ, ZENER VOLTAGE (V) 8.0 10 60 40 20 0 0 25 50 75 100 TEMPERATURE (°C) 125 Figure 6. Steady State Power Derating Figure 5. Zener Voltage versus Zener Current (VZ Up to 9 V) www.onsemi.com 4 150 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 1 STYLE 1 SOD−323 CASE 477−02 ISSUE H 2 SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E A3 A C NOTE 3 DATE 13 MAR 2007 1 STYLE 2 L A1 NOTE 5 MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* XX M 0.63 0.025 STYLE 1 0.83 0.033 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DESCRIPTION: 98ASB17533C SOD−323 STYLE 2 XX = Specific Device Code M = Date Code 1.60 0.063 DOCUMENT NUMBER: XX M STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE STYLE 2: NO POLARITY Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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