SZMMBZ15VALT3G

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series Zener Diodes, 24 and 40 Watt Peak Power SOT−23 Dual Common Anode Zeners www.onsemi.com These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. SOT−23 CASE 318 STYLE 12 Features • SOT−23 Package Allows Either Two Separate Unidirectional • • • • • • • • • Configurations or a Single Bidirectional Configuration Standard Zener Breakdown Voltage Range − 5.6 V to 47 V Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform ESD Rating: − Class 3B (> 16 kV) per the Human Body Model − Class C (> 400 V) per the Machine Model ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge Maximum Clamping Voltage @ Peak Pulse Current Low Leakage < 5.0 mA Flammability Rating UL 94 V−0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics CATHODE 1 3 ANODE CATHODE 2 MARKING DIAGRAM XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel See detailed ordering and shipping information on page 2 of this data sheet. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 3 of this data sheet. Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. © Semiconductor Components Industries, LLC, 1996 August, 2016 − Rev. 20 1 Publication Order Number: MMBZ5V6ALT1/D MMBZxxxALT1G Series, SZMMBZxxxALT1G Series MAXIMUM RATINGS Rating Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C MMBZ5V6ALT1G thru MMBZ9V1ALT1G MMBZ12VALT1G thru MMBZ47VALT1G Symbol Value Unit Ppk 24 40 W 225 1.8 mW° mW/°C 556 °C/W 300 2.4 °mW mW/°C Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25°C °PD° Thermal Resistance Junction−to−Ambient RqJA Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C Derate above 25°C °PD° Thermal Resistance Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 6 and derate above TA = 25°C per Figure 7. 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *Other voltages may be available upon request. ORDERING INFORMATION Package Shipping† MMBZ5V6ALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZMMBZ5V6ALT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZ5V6ALT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBZ6VxALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZMMBZ6VxALT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZ6VxALT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBZ9V1ALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZ9V1ALT13G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBZxxVALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZMMBZxxVALT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZxxVALT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SZMMBZxxVALT3G* SOT−23 (Pb−Free) 10,000 / Tape & Reel SZMMBZxxVTALT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 2 MMBZxxxALT1G Series, SZMMBZxxxALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol IF IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR I Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VBR VC VBR VRWM Breakdown Voltage @ IT IT Test Current QVBR V IR VF IT Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IPP Uni−Directional Zener ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 24 WATTS Breakdown Voltage IR @ VRWM VBR (Note 4) (V) @ IT Max Zener Impedance (Note 5) VC @ IPP (Note 6) ZZT @ IZT VC IPP QVBR V A mV/5C 8.0 3.0 1.26 8.7 2.76 2.80 − 9.6 2.5 3.4 − 14 1.7 7.5 ZZK @ IZK Device* Device Marking VRWM Volts mA Min Nom Max mA W W mA MMBZ5V6ALT1G/T3G 5A6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 MMBZ6V2ALT1G 6A2 3.0 0.5 5.89 6.2 6.51 1.0 − − − MMBZ6V8ALT1G 6A8 4.5 0.5 6.46 6.8 7.14 1.0 − − MMBZ9V1ALT1G 9A1 6.0 0.3 8.65 9.1 9.56 1.0 − − (VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 40 WATTS Device Marking VRWM IR @ VRWM Volts nA MMBZ12VALT1G 12A 8.5 MMBZ15VALT1G 15A 12 MMBZ16VALT1G 16A MMBZ18VALT1G MMBZ20VALT1G Breakdown Voltage VC @ IPP (Note 6) @ IT VC IPP QVBR Min Nom Max mA V A mV/5C 200 11.40 12 12.60 1.0 17 2.35 7.5 50 14.25 15 15.75 1.0 21 1.9 12.3 13 50 15.20 16 16.80 1.0 23 1.7 13.8 18A 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3 20A 17 50 19.00 20 21.00 1.0 28 1.4 17.2 MMBZ27VALT1G/T3G 27A 22 50 25.65 27 28.35 1.0 40 1.0 24.3 MMBZ33VALT1G 33A 26 50 31.35 33 34.65 1.0 46 0.87 30.4 MMBZ47VALT1G 47A 38 50 44.65 47 49.35 1.0 54 0.74 43.1 Device* VBR (Note 4) (V) (VF = 0.9 V Max @ IF = 10 mA) (2% Tolerance) 40 WATTS Breakdown Voltage VC @ IPP (Note 6) Device Marking VRWM IR @ VRWM @ IT VC IPP QVBR Volts nA Min Nom Max mA V A mV/5C MMBZ16VTALT1G 16T 13 50 15.68 16 16.32 1.0 23 1.7 13.8 MMBZ47VTALT1G 47T 38 50 46.06 47 47.94 1.0 54 0.74 43.1 Device* VBR (Note 4) (V) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. VBR measured at pulse test current IT at an ambient temperature of 25°C. 5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1.0 kHz. 6. Surge current waveform per Figure 6 and derate per Figure 7 * Include SZ-prefix devices where applicable. www.onsemi.com 3 MMBZxxxALT1G Series, SZMMBZxxxALT1G Series TYPICAL CHARACTERISTICS 1000 15 100 12 IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VBR @ IT) 18 9 10 1 6 0.1 3 0 −40 0 + 50 + 100 TEMPERATURE (°C) 0.01 −40 + 150 Figure 1. Typical Breakdown Voltage versus Temperature + 85 + 25 TEMPERATURE (°C) + 125 Figure 2. Typical Leakage Current versus Temperature (Upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) 60 320 C, CAPACITANCE (pF) 50 240 200 5.6 V 160 120 15 V 80 40 27 V 30 20 10 40 0 33 V 0 0 1 2 3 0 1 BIAS (V) 2 3 BIAS (V) Figure 3. Typical Capacitance versus Bias Voltage Figure 4. Typical Capacitance versus Bias Voltage (Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) (Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) 300 PD, POWER DISSIPATION (mW) C, CAPACITANCE (pF) 280 250 ALUMINA SUBSTRATE 200 150 100 FR−5 BOARD 50 0 0 25 50 75 100 125 TEMPERATURE (°C) 150 175 Figure 5. Steady State Power Derating Curve www.onsemi.com 4 MMBZxxxALT1G Series, SZMMBZxxxALT1G Series PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. tr ≤ 10 ms VALUE (%) 100 PEAK VALUE − IPP IPP HALF VALUE − 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25°C TYPICAL CHARACTERISTICS 100 90 80 70 60 50 40 30 20 10 0 0 25 Figure 6. Pulse Waveform 100 Ppk, PEAK SURGE POWER (W) Ppk, PEAK SURGE POWER (W) RECTANGULAR WAVEFORM, TA = 25°C BIDIRECTIONAL 1 200 Figure 7. Pulse Derating Curve 100 10 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) UNIDIRECTIONAL RECTANGULAR WAVEFORM, TA = 25°C BIDIRECTIONAL 10 UNIDIRECTIONAL 1 0.1 1 10 100 1000 0.1 1 10 100 PW, PULSE WIDTH (ms) PW, PULSE WIDTH (ms) Figure 8. Maximum Non−repetitive Surge Power, Ppk versus PW Figure 9. Maximum Non−repetitive Surge Power, Ppk(NOM) versus PW Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal Zener voltage measured at the low test current used for voltage classification. Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). www.onsemi.com 5 1000 MMBZxxxALT1G Series, SZMMBZxxxALT1G Series TYPICAL COMMON ANODE APPLICATIONS A dual junction common anode design in a SOT−23 package protects two separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of ESD applications are illustrated below. Computer Interface Protection A KEYBOARD TERMINAL PRINTER ETC. B C I/O D FUNCTIONAL DECODER GND MMBZ5V6ALT1G THRU MMBZ47VALT1G Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS CPU I/O CLOCK MMBZ5V6ALT1G THRU MMBZ47VALT1G CONTROL BUS GND MMBZ5V6ALT1G THRU MMBZ47VALT1G www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative