SZMMSZ5232ET1G

MMSZ52xxET1G Series, SZMMSZ52xxET1G Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. http://onsemi.com Features          500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 2.4 V to 110 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications General Purpose, Medium Current ESD Rating of Class 3 (> 16 kV) per Human Body Model Peak Power − 225 W (8 x 20 ms) SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free Packages are Available* SOD−123 CASE 425 STYLE 1 1 Cathode 2 Anode MARKING DIAGRAM Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 1 xxx M G G xxx = Device Code (Refer to page 2) M = Date Code G = Pb−Free Package 260C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 (Note: Microdot may be in either location) MAXIMUM RATINGS Rating Symbol Max Units Peak Power Dissipation @ 20 ms (Note 1) @ TL  25C Ppk 225 W Total Power Dissipation on FR−5 Board, (Note 3) @ TL = 75C Derated above 75C PD Thermal Resistance, (Note 2) Junction−to−Ambient RqJA Thermal Resistance, (Note 2) Junction−to−Lead RqJL Junction and Storage Temperature Range TJ, Tstg 500 6.7 mW mW/C ORDERING INFORMATION Package Shipping† MMSZ52xxET1G SOD−123 (Pb−Free) 3,000 / Tape & Reel SZMMSZ52xxET1G SOD−123 (Pb−Free) 3,000 / Tape & Reel MMSZ52xxET3G SOD−123 (Pb−Free) 10,000 / Tape & Reel Device C/W 340 C/W 150 −55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 11. 2. Thermal Resistance measurement obtained via infrared Scan Method. 3. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 February, 2012 − Rev. 8 1 Publication Order Number: MMSZ5221ET1/D MMSZ52xxET1G Series, SZMMSZ52xxET1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless I otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) IF Parameter Symbol VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Zener Voltage (Notes 4 and 5) VZ (V) Zener Impedance (Note 6) Leakage Current @ IZT ZZT @ IZT Max mA W W mA mA V 2.4 2.52 20 30 1200 0.25 100 1 2.57 2.7 2.84 20 30 1300 0.25 75 1 CA6 3.14 3.3 3.47 20 28 1600 0.25 25 1 CA8 3.71 3.9 4.10 20 23 1900 0.25 10 1 MMSZ5229ET1G CA9 4.09 4.3 4.52 20 22 2000 0.25 5 1 MMSZ5231ET1G CB2 4.85 5.1 5.36 20 17 1600 0.25 5 2 MMSZ5232ET1G CB3 5.32 5.6 5.88 20 11 1600 0.25 5 3 MMSZ5234ET1G CB5 5.89 6.2 6.51 20 7 1000 0.25 5 4 MMSZ5235ET1G CB6 6.46 6.8 7.14 20 5 750 0.25 3 5 MMSZ5236ET1G CB7 7.13 7.5 7.88 20 6 500 0.25 3 6 MMSZ5237ET1G CB8 7.79 8.2 8.61 20 8 500 0.25 3 6.5 MMSZ5240ET1G CC2 9.50 10 10.50 20 17 600 0.25 3 8 MMSZ5242ET1G CC4 11.40 12 12.60 20 30 600 0.25 1 9.1 MMSZ5243ET1G CC5 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 MMSZ5244ET1G CC6 13.30 14 14.70 9.0 15 600 0.25 0.1 10 MMSZ5245ET1G CC7 14.25 15 15.75 8.5 16 600 0.25 0.1 11 MMSZ5246ET1G CC8 15.20 16 16.80 7.8 17 600 0.25 0.1 12 MMSZ5248ET1G CD1 17.10 18 18.90 7.0 21 600 0.25 0.1 14 MMSZ5250ET1G CD3 19.00 20 21.00 6.2 25 600 0.25 0.1 15 MMSZ5252ET1G CD5 22.80 24 25.20 5.2 33 600 0.25 0.1 18 Device Marking Min Nom MMSZ5221ET1G CA1 2.28 MMSZ5223ET1G CA3 MMSZ5226ET1G MMSZ5228ET1G Device* ZZK @ IZK 4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage. 5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C. 6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied. The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz. *Include SZ-prefix devices where applicable http://onsemi.com 2 IR @ VR MMSZ52xxET1G Series, SZMMSZ52xxET1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Zener Voltage (Notes 4 and 5) VZ (V) Zener Impedance (Note 6) @ IZT ZZT @ IZT ZZK @ IZK Leakage Current IR @ VR Device Marking Min Nom Max mA W W mA mA V MMSZ5253ET1G CD6 23.75 25 26.25 5.0 35 600 0.25 0.1 19 MMSZ5254ET1G CD7 25.65 27 28.35 4.6 41 600 0.25 0.1 21 MMSZ5255ET1G CD8 26.60 28 29.40 4.5 44 600 0.25 0.1 21 MMSZ5256ET1G CD9 28.50 30 31.50 4.2 49 600 0.25 0.1 23 MMSZ5257ET1G CE1 31.35 33 34.65 3.8 58 700 0.25 0.1 25 MMSZ5258ET1G CE2 34.20 36 37.80 3.4 70 700 0.25 0.1 27 MMSZ5259ET1G CE3 37.05 39 40.95 3.2 80 800 0.25 0.1 30 MMSZ5262ET1G CE6 48.45 51 53.55 2.5 125 1100 0.25 0.1 39 MMSZ5263ET1G CE7 53.20 56 58.80 2.2 150 1300 0.25 0.1 43 Device* 4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage. 5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C. 6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied. The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz. *Include SZ-prefix devices where applicable http://onsemi.com 3 MMSZ52xxET1G Series, SZMMSZ52xxET1G Series qVZ, TEMPERATURE COEFFICIENT (mV/C) qVZ, TEMPERATURE COEFFICIENT (mV/C) TYPICAL CHARACTERISTICS 8 100 7 TYPICAL TC VALUES FOR MMSZ5221BT1G SERIES 6 5 4 VZ @ IZT 3 2 1 0 −1 −2 −3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 TYPICAL TC VALUES FOR MMSZ5221BT1G SERIES VZ @ IZT 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55C to +150C) Figure 2. Temperature Coefficients (Temperature Range − 55C to +150C) 1000 Ppk, PEAK SURGE POWER (WATTS) PD, POWER DISSIPATION (WATTS) 1.2 1.0 PD versus TL 0.8 0.6 100 PD versus TA 0.4 0.2 0 0 25 RECTANGULAR WAVEFORM, TA = 25C 50 75 100 T, TEMPERATURE (C) 125 10 1 150 Figure 3. Steady State Power Derating 1 1000 1000 TJ = 25C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) IZ = 1 mA 100 75 V (MMSZ5267BT1) 91 V (MMSZ5270BT1) 100 5 mA 20 mA 10 10 150C 1 10 100 PW, PULSE WIDTH (ms) Figure 4. Maximum Nonrepetitive Surge Power 1000 ZZT, DYNAMIC IMPEDANCE (W) 0.1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 5. Effect of Zener Voltage on Zener Impedance 0.5 75C 25C 0C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 6. Typical Forward Voltage http://onsemi.com 4 1.1 1.2 MMSZ52xxET1G Series, SZMMSZ52xxET1G Series TYPICAL CHARACTERISTICS TA = 25C 0 V BIAS 1 V BIAS C, CAPACITANCE (pF) IR, LEAKAGE CURRENT (mA) 1000 100 BIAS AT 50% OF VZ NOM 10 1 1 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 1000 100 10 1 +150C 0.1 0.01 0.001 + 25C 0.0001 −55C 0.00001 0 10 Figure 7. Typical Capacitance IZ, ZENER CURRENT (mA) 10 1 0.1 2 4 6 8 VZ, ZENER VOLTAGE (V) 1 0.1 0.01 12 10 10 100 30 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 ms tr 90 10 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 50 HALF VALUE IRSM/2 @ 20 ms 40 30 tP 20 10 0 0 20 90 Figure 10. Zener Voltage versus Zener Current (12 V to 91 V) Figure 9. Zener Voltage versus Zener Current (VZ Up to 12 V) % OF PEAK PULSE CURRENT IZ, ZENER CURRENT (mA) TA = 25C TA = 25C 0 80 Figure 8. Typical Leakage Current 100 100 0.01 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 40 60 t, TIME (ms) Figure 11. 8  20 ms Pulse Waveform http://onsemi.com 5 80 90 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 SCALE 5:1 D A ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A1 1 HE DIM A A1 b c D E HE L q E 2 q L b C ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 ° 0° MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° GENERIC MARKING DIAGRAM* 1 SOLDERING FOOTPRINT* 0.91 0.036 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. XXXMG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.22 0.048 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. CATHODE 2. ANODE SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42927B SOD−123 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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