SZNUD3112LT1G

DATA SHEET www.onsemi.com Integrated Relay, Inductive Load Driver 6 1 SC−74 CASE 318F STYLE 7 NUD3112 This device is used to switch inductive loads such as relays, solenoids incandescent lamps, and small DC motors without the need of a free−wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD protection, and Zener clamps. It accepts logic level inputs thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. MARKING DIAGRAM JW5 MG G Features JW5 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) • Provides a Robust Driver Interface Between D.C. Relay Coil and • • • • • • Sensitive Logic Circuits Optimized to Switch Relays of 12 V Rail Capable of Driving Relay Coils Rated up to 6.0 W at 12 V Internal Zener Eliminates the Need of Free−Wheeling Diode Internal Zener Clamp Routes Induced Current to Ground for Quieter Systems Operation Low VDS(ON) Reduces System Current Drain These Devices is Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ORDERING INFORMATION Device Package Shipping† NUD3112DMT1G SC−74 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Typical Applications • Telecom: Line Cards, Modems, Answering Machines, FAX • Computers and Office: Photocopiers, Printers, Desktop Computers • Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette Recorders • Industrial: Small Appliances, Security Systems, Automated Test Equipment, Garage Door Openers INTERNAL CIRCUIT DIAGRAMS Drain (6) Gate (2) Drain (3) 1.0 k 1.0 k 300 k 300 k Source (1) © Semiconductor Components Industries, LLC, 2002 October, 2022 − Rev. 12 Gate (5) Source (4) 1 Publication Order Number: NUD3112/D NUD3112 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol Value Unit VDSS Drain to Source Voltage – Continuous Rating 14 Vdc VGS Gate to Source Voltage – Continuous 6 Vdc ID Drain Current – Continuous 500 mA Ez Single Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C) 50 mJ TJ Junction Temperature 150 °C TA Operating Ambient Temperature −40 to 85 °C Tstg Storage Temperature Range −65 to +150 °C PD Total Power Dissipation (Note 1) Derating Above 25°C 1.8 mW/°C PD Total Power Dissipation (Note 1) Derating Above 25°C 3.0 mW/°C RqJA Thermal Resistance Junction−to−Ambient (Note 1) 329 °C/W ESD Human Body Model (HBM) According to EIA/JESD22/A114 2000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted onto minimum pad board. TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS VBRDSS Drain to Source Sustaining Voltage (Internally Clamped) (ID = 10 mA) 14 16 17 V BVGSO Ig = 1.0 mA − − 8 V IDSS Drain to Source Leakage Current (VDS = 12 V , VGS = 0 V, TA = 25°C) (VDS = 12 V, VGS = 0 V, TA = 85°C) − − − − 20 40 mA IGSS Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) − − − − 35 65 mA 0.8 0.8 1.2 − 1.4 1.4 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TA = 85°C) RDS(on) Drain to Source On−Resistance (ID = 250 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 5.0 V) (ID = 500 mA, VGS = 3.0 V, TA = 85°C) (ID = 500 mA, VGS = 5.0 V, TA = 85°C) − − − − − − − − − − 1.2 1.3 0.9 1.3 0.9 W IDS(on) Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TA = 85°C) 300 200 400 − − − mA 350 490 − mmhos gFS Forward Transconductance (VOUT = 12.0 V, IOUT = 0.25 A) www.onsemi.com 2 NUD3112 TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued) Symbol Characteristic Min Typ Max Unit DYNAMIC CHARACTERISTICS Ciss Input Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) − 23 − pF Coss Output Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) − 30 − pF Crss Transfer Capacitance (VDS = 12.0 V, VGS = 0 V, f = 10 kHz) − 7 − pF Min Typ Max Unit Propagation Delay Times: High to Low Propagation Delay; Figure 1 (VDS = 12 V, VGS = 5.0 V) Low to High Propagation Delay; Figure 1 (VDS = 12 V, VGS = 5.0 V) − − 21 91 − − Transition Times: Fall Time; Figure 1 (VDS = 12 V, VGS = 5.0 V) Rise Time; Figure 1 (VDS = 12 V, VGS = 5.0 V) − − 36 61 − − SWITCHING CHARACTERISTICS Characteristic Symbol tPHL tPLH tf tr nS nS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. VIH Vin 50% 0V tPHL tPLH VOH 90% Vout 50% 10% VOL tr tf Figure 1. Switching Waveforms www.onsemi.com 3 NUD3112 TYPICAL PERFORMANCE CURVES (TJ = 25°C UNLESS OTHERWISE SPECIFIED) 1 VGS = 5.0 V VGS = 3.0 V 0.1 I D, DRAIN CURRENT (A) I D, DRAIN CURRENT (A) 1 VGS = 2.0 V VGS = 1.5 V 0.01 0.001 VGS = 1.0 V 0.0001 0.00001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS = 0.8 V 0.1 0.01 125°C 0.001 85°C 25°C 0.0001 0.00001 0.8 0.5 −40°C 1.0 1200 1000 800 ID = 0.25 A VGS = 3.0 V ID = 0.5 A VGS = 3.0 V ID = 0.5 A VGS = 5.0 V 600 400 200 0 −50 −25 0 25 75 50 TEMPERATURE (°C) 100 125 4500 3500 3000 2500 125°C 2000 85°C 25°C −40°C 1500 1000 500 0 0.6 0.8 1 1.2 1.4 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.6 Figure 5. RDS(ON) Variation vs. Gate−to−Source Voltage 21 15.98 V Z , ZENER VOLTAGE (V) V Z , ZENER CLAMP VOLTAGE (V) IZ = 10 mA 15.94 15.92 15.90 15.88 15.86 15.84 15.82 15.80 −50 ID = 250 mA 4000 Figure 4. On−Resistance Variation vs. Temperature 15.96 5.0 Figure 3. Transfer Function RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) Figure 2. Output Characteristics 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE−TO−SOURCE VOLTAGE (V) −25 0 50 75 25 TEMPERATURE (°C) 100 125 20 19 18 17 16 15 85°C 25°C 14 13 0.1 Figure 6. Zener Voltage vs. Temperature −40°C 1 10 100 IZ, ZENER CURRENT (mA) 1000 Figure 7. Zener Clamp Voltage vs. Zener Current www.onsemi.com 4 NUD3112 1.2 1.1 45 VGS = 3.0 V 1 125°C 0.9 85°C 40 IGSS, GATE LEAKAGE (mA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TYPICAL PERFORMANCE CURVES (TJ = 25°C UNLESS OTHERWISE SPECIFIED) (continued) 0.8 0.7 0.6 25°C −40°C 0.5 35 30 25 20 15 VGS = 3.0 V 10 5 0 −50 0.4 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 ID, DRAIN CURRENT (A) VGS = 5.0 V Figure 8. On−Resistance vs. Drain Current and Temperature −25 0 25 50 75 TEMPERATURE (°C) Figure 9. Gate Leakage vs. Temperature +12V Relay +5V / 3.3V Logic 1.0 k ESD Zener 100 300 k ESD Zener Figure 10. Typical Application Circuit www.onsemi.com 5 clamp Zener clamp Zener 125 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−74 CASE 318F ISSUE P 6 1 SCALE 2:1 DATE 07 OCT 2021 GENERIC MARKING DIAGRAM* XXX MG G XXX M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 4: PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3 5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3 STYLE 5: PIN 1. CHANNEL 1 2. ANODE 3. CHANNEL 2 4. CHANNEL 3 5. CATHODE 6. CHANNEL 4 STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 8: PIN 1. EMITTER 1 2. BASE 2 3. COLLECTOR 2 4. EMITTER 2 5. BASE 1 6. COLLECTOR 1 STYLE 9: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 10: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 11: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: 98ASB42973B SC−74 STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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