SZNUP2105LT3G

27 V ESD Protection Diode Dual Line CAN Bus Protector NUP2105L, SZNUP2105L The SZ/NUP2105L has been designed to protect the CAN transceiver in high−speed and fault tolerant networks from ESD and other harmful transient voltage events. This device provides bidirectional protection for each data line with a single compact SOT−23 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. Features • • • • • • • • • 350 W Peak Power Dissipation per Line (8/20 msec Waveform) Low Reverse Leakage Current (< 100 nA) Low Capacitance High−Speed CAN Data Rates IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4, 30 kV − IEC 61000−4−4 (EFT): 40 A – 5/50 ns − IEC 61000−4−5 (Lighting) 8.0 A (8/20 ms) ISO 7637−2 Pulse 2a: Repetitive Load Switch Disconnect, 9.5 A ISO 7637−3 Pulse 3a,b: Repetitive Load Switching Fast Transients, 50 A Flammability Rating UL 94 V−0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications www.onsemi.com SOT−23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER SOT−23 CASE 318 STYLE 28 PIN 1 PIN 3 PIN 2 CAN_H CAN Transceiver CAN Bus CAN_L • Industrial Control Networks NUP2105L Smart Distribution Systems (SDS®) ♦ DeviceNet™ Automotive Networks ♦ Low and High−Speed CAN ♦ Fault Tolerant CAN ♦ • MARKING DIAGRAM 27EMG G 1 27E M G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2003 May, 2020 − Rev. 10 1 Publication Order Number: NUP2105L/D NUP2105L, SZNUP2105L MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol PPK Rating Value Peak Power Dissipation 8/20 ms Double Exponential Waveform (Note 1) Unit W 350 TJ Operating Junction Temperature Range −55 to 150 °C TJ Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature (10 s) 260 °C Human Body model (HBM) Machine Model (MM) IEC 61000−4−2 Specification (Contact) 16 400 30 kV V kV ESD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Symbol VRWM Parameter Test Conditions Min Typ Max Unit 24 − − V 26.2 − 32 V Reverse Working Voltage (Note 2) Breakdown Voltage IT = 1 mA (Note 3) IR Reverse Leakage Current VRWM = 24 V − 1.5 100 nA VC Clamping Voltage IPP = 5 A (8/20 ms Waveform) (Note 4) − − 40 V VC Clamping Voltage IPP = 8 A (8/20 ms Waveform) (Note 4) − − 44 V IPP Maximum Peak Pulse Current 8/20 ms Waveform (Note 4) − − 8.0 A CJ Capacitance VR = 0 V, f = 1 MHz (Line to GND) − − 30 pF VBR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. ORDERING INFORMATION Package Shipping† NUP2105LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZNUP2105LT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel NUP2105LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SZNUP2105LT3G* SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 2 NUP2105L, SZNUP2105L TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) % OF PEAK PULSE CURRENT WAVEFORM PARAMETERS tr = 8 ms td = 20 ms 90 80 c−t 70 IPP, PEAK PULSE CURRENT (A) 12.0 110 100 60 td = IPP/2 50 40 30 20 10 0 0 10 5 20 15 8.0 6.0 4.0 2.0 0.0 30 25 PULSE WAVEFORM 8 x 20 ms per Figure 1 10.0 25 30 50 50 35 f = 1.0 MHz, Line to Ground 45 40 30 125°C 35 25°C 25 IT, (mA) C, CAPACITANCE (pF) 45 Figure 2. Clamping Voltage vs Peak Pulse Current Figure 1. Pulse Waveform, IEC 61000−4−5 8/20 ms 20 −40°C 30 25°C 25 65°C 20 15 10 15 −55°C 5 0 4 2 6 8 0 10 20 22 VR, REVERSE VOLTAGE (V) 26 28 30 32 34 Figure 4. VBR versus IT Characteristics 120 25 125°C 20 TA = 150°C 100 PERCENT DERATING (%) 65°C 25°C, −55°C 15 10 5 0 24 TA = +150°C VBR, VOLTAGE (V) Figure 3. Typical Junction Capacitance vs Reverse Voltage VR, REVERSE BIAS VOLTAGE (V) 40 VC, CLAMPING VOLTAGE (V) t, TIME (ms) 10 35 0 2 4 6 8 10 12 IL, LEAKAGE CURRENT (nA) 14 80 60 40 20 0 −60 16 Figure 5. IR versus Temperature Characteristics −30 0 30 60 90 TEMPERATURE (°C) 120 150 180 Figure 6. Temperature Power Dissipation Derating www.onsemi.com 3 NUP2105L, SZNUP2105L APPLICATIONS Background ESD. The NUP2105L has been tested to EMI and ESD levels that exceed the specifications of popular high speed CAN networks. The Controller Area Network (CAN) is a serial communication protocol designed for providing reliable high speed data transmission in harsh environments. surge protection diodes provide a low cost solution to conducted and radiated Electromagnetic Interference (EMI) and Electrostatic Discharge (ESD) noise problems. The noise immunity level and reliability of CAN transceivers can be easily increased by adding external surge protection diodes to prevent transient voltage failures. The NUP2105L provides a surge protection solution for CAN data communication lines. The NUP2105L is a dual bidirectional surge protection device in a compact SOT−23 package. This device is based on Zener technology that optimizes the active area of a PN junction to provide robust protection against transient EMI surge voltage and CAN Physical Layer Requirements Table 1 provides a summary of the system requirements for a CAN transceiver. The ISO 11898−2 physical layer specification forms the baseline for most CAN systems. The transceiver requirements for the Honeywell® Smart Distribution Systems (SDS®) and Rockwell (Allen−Bradley) DeviceNet™ high speed CAN networks are similar to ISO 11898−2. The SDS and DeviceNet transceiver requirements are similar to ISO 11898−2; however, they include minor modifications required in an industrial environment. Table 1. Transceiver Requirements for High−Speed CAN Networks Parameter ISO 11898−2 SDS Physical Layer Specification 2.0 DeviceNet Min / Max Bus Voltage (12 V System) −3.0 V / 16 V 11 V / 25 V Same as ISO 11898−2 Common Mode Bus Voltage CAN_L: −2.0 V (min) 2.5 V (nom) CAN_H: 2.5 V (nom) 7.0 V (max) Same as ISO 11898−2 Same as ISO 11898−2 Transmission Speed 1.0 Mb/s @ 40 m 125 kb/s @ 500 m Same as ISO 11898−2 500 kb/s @ 100 m 125 kb/s @ 500 m ESD Not specified, recommended w $8.0 kV (contact) Not specified, recommended w $8.0 kV (contact) Not specified, recommended w $8.0 kV (contact) EMI Immunity ISO 7637−3, pulses ‘a’ and ‘b’ IEC 61000−4−4 EFT Same as ISO 11898−2 Popular Applications Automotive, Truck, Medical and Marine Systems Industrial Control Systems Industrial Control Systems www.onsemi.com 4 NUP2105L, SZNUP2105L EMI Specifications 61000−4 and ISO 7637 tests are similar; however, the IEC standard was created as a generic test for any electronic system, while the ISO 7637 standard was designed for vehicular applications. The IEC61000−4−4 Electrical Fast Transient (EFT) specification is similar to the ISO 7637−3 pulse 3a and b tests and is a requirement of SDS CAN systems. The IEC 61000−4−5 test is used to define the power absorption capacity of a surge protection device and long duration voltage transients such as lightning. Table 2 provides a summary of the ISO 7637 and IEC 61000−4−X test specifications. Table 3 provides the NUP2105L’s ESD test results. The EMI protection level provided by the surge protection device can be measured using the International Organization for Standardization (ISO) 7637−2 and −3 specifications that are representative of various noise sources. The ISO 7637−2 specification is used to define the susceptibility to coupled transient noise on a 12 V power supply, while ISO 7637−3 defines the noise immunity tests for data lines. The ISO 7637 tests also verify the robustness and reliability of a design by applying the surge voltage for extended durations. The IEC 61000−4−X specifications can also be used to quantify the EMI immunity level of a CAN system. The IEC Table 2. ISO 7637 and IEC 61000−4−X Test Specifications Test Waveform Pulse 1 Test Specifications NUP2105L Results Simulated Noise Source Vs = 0 to −100 V Imax = 10 A Imax = 1.75 A Vclamp_max = 31 V tduration = 5000 pulses DUT (Note 1) in parallel with inductive load that is disconnected from power supply. tduration = 5000 pulses ISO 7637−2 12 V Power Supply Lines (Note 2) Pulse 2a Pulse ‘a’ ISO 7637−3 Repetitive data line fast transients (Note 3) Vs = 0 to +50 V coupled onto 14 V battery Imax = 10 A Imax = 9.5 A Vclamp_max = 42 V tduration = 5000 pulses tduration = 5000 pulses Ri = 2 W, tr = 1.0 ms, td_10% = 50 ms, t1 = 2.5 s, t2 = 200 ms Vs = −60 V Imax = 1.2 A Imax = 50 A (Note 4) Vclamp_max = 40 V tduration = 60 minutes tduration = 10 minutes Pulse ‘b’ Ri = 10 W, tr = 1.0 ms, td_10% = 2000 ms, t1 = 2.5 s, t2 = 200 ms, t3 = 100 ms Vs = +40 V Imax = 0.8 A DUT in series with inductor (wire harness) that is disconnected from load. Switching noise of inductive loads. Ri = 50 W, tr = 5.0 ns, td_10% = 100 ns, t1 = 100 ms, t2 = 10 ms, t3 = 90 ms tduration = 10 minutes IEC 61000−4−4 Data Line EFT IEC 61000−4−5 Vopen circuit = 2.0 kV Ishort circuit = 40 A (Level 4 = Severe Industrial Environment) Switching noise of inductive loads. Ri = 50 W, tr < 5.0 ns, td_50% = 50 ns, tburst = 15 ms, fburst = 2.0 to 5.0 kHz, trepeat = 300 ms tduration = 1 minute Vopen circuit = 1.2/50 ms, Ishort circuit = 8/20 ms Ri = 50 W 1. 2. 3. 4. 5. (Note 5) Imax = 8.0 A Lightning, nonrepetitive power line and load switching DUT = device under test. Test specifications were taken from ISO7637−2: 2004 version. Test specifications were taken from ISO7637−3: 1995 version. DUT was tested to ISO7637−2: 2004 pulse 3a,b specification for more rigorous test. The EFT immunity level was measured with test limits beyond the IEC 61000−4−4 test, but with the more severe test conditions of ISO 7637−3. www.onsemi.com 5 NUP2105L, SZNUP2105L Table 3. NUP2105L ESD Test Results ESD Specification Human Body Model IEC 61000−4−2 Test Test Level Pass / Fail Contact 16 kV Pass Contact 30 kV (Note 6) Pass Non−contact (Air Discharge) 30 kV (Note 6) Pass 6. Test equipment maximum test voltage is 30 kV. Surge protection Diode Protection Circuit breakdown voltage of the diode that is reversed biased, plus the diode drop of the second diode that is forwarded biased. surge protection diodes provide protection to a transceiver by clamping a surge voltage to a safe level. surge protection diodes have high impedance below and low impedance above their breakdown voltage. A surge protection Zener diode has its junction optimized to absorb the high peak energy of a transient event, while a standard Zener diode is designed and specified to clamp a steady state voltage. Figure 7 provides an example of a dual bidirectional surge protection diode array that can be used for protection with the high−speed CAN network. The bidirectional array is created from four identical Zener surge protection diodes. The clamping voltage of the composite device is equal to the CAN_H CAN Transceiver CAN_L CAN Bus NUP2105L Figure 7. High−Speed and Fault Tolerant CAN Surge Protection Circuit Honeywell and SDS are registered trademarks of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 SCALE 4:1 GENERIC MARKING DIAGRAM* XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. ANODE 3. CATHODE−ANODE 3. GATE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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