Ordering number : ENA2300A
TF412S
N-Channel JFET
30V, 1.2 to 3.0mA, 5.0mS, SOT-883
http://onsemi.com
Features
Electrical Connection
Small IGSS : max 1.0nA (VGS= 20V, VDS=0V)
Small Ciss : typ 4pF (VDS=10V, VGS=0V, f=1MHz)
Ultrasmall package facilitates miniaturization in end products
Halogen free compliance
3
1 : Source
2 : Drain
3 : Gate
Applications
Top view
2
1
Low-Frequency general-purpose amplifier,
impedance conversion, infrared sensor applications
Specifications
Absolute Maximum Ratings at Ta = 25C
Marking
Parameter
Drain-to-Source Voltage
Symbol
VDSX
Value
30
Unit
V
Gate-to-Drain Voltage
VGDS
30
V
Gate Current
IG
ID
10
mA
Drain Current
10
mA
Power Dissipation
PD
100
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
3
1
A2 M
2
SOT-883
This product is designed to “ESD immunity < 200V*”,
so please take care when handling.
* Machine Model
M
= Date Code
Ordering & Package Information
Device
Package
TF412ST5G
Pb-free and
SOT-883
Halogen Free
Shipping
8,000
pcs. / reel
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Ta 25C
Value
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
V(BR)GDS
IGSS
Cutoff Voltage
VGS(off)
IG = 10μA, VDS=0V
VGS = 20V, VDS=0V
VDS = 10V, ID = 1μA
Drain Current
IDSS
VDS = 10V, VGS = 0V
1.2
Forward Transfer Admittance
| yfs |
VDS = 10V, VGS=0V, f = 1kHz
3.0
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
min
30
typ
max
V
1.0
0.18
VDS = 10V, VGS = 0V, f = 1MHz
Unit
0.80
5.0
nA
1.5
V
3.0
mA
mS
4
pF
1.1
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Semiconductor Components Industries, LLC, 2014
April, 2014
42114HK TC-00003110/22512HK GB No.A2300-1/4
TF412S
ID -- VDS
3.0
2.5
2.5
2.0
Drain Current, ID -- mA
Drain Current, ID -- mA
ID -- VDS
3.0
VGS=0V
1.5
--0.1V
--0.2V
1.0
--0.3V
0.5
1
2
3
4
--0.2V
1.0
--0.3V
--0.4V
0
Drain Current, ID -- mA
ID
SS
=3
.0m
A
2.5
2.0
0m
A
1.5
1.0
2.
Drain Current, ID -- mA
20
25
30
IT16771
VDS=10V
3.0
0.5
2.5
2.0
1.5
1.0
°C
75
=
Ta
0.5
0
--1.0
--0.8
--0.6
--0.4
--0.2
Gate-to-Source Voltage, VGS -- V
--1.0
--0.8
--0.6
--0.4
--0.2
0
0.5
1.0
1.5
2.0
2.5
3.0
Drain Current, IDSS -- mA
2
2
3
5 7 1.0
2
3
5 7 10
3
2
1
0
0.5
2
3
Drain-to-Source Voltage, VDS -- V
5 7 100
IT16776
1.0
1.5
2.0
2.5
3.0
Drain Current, IDSS -- mA
Reverse Transfer Capacitance, Crss -- pF
3
1.0
0.1
4
3.5
HD131113
Crss -- VDS
10
5
0
IT16773
5
HD131113
7
--0.2
VDS=10V
VGS=0V
f=1kHz
6
0
3.5
VGS=0V
f=1MHz
--0.4
| yfs | -- IDSS
7
Ciss -- VDS
10
--0.6
Gate-to-Source Voltage, VGS -- V
Forward Transfer Admittance, | yfs | -- mS
--1.2
--0.8
HD 131113
VDS=10V
ID=1.0μA
°C
25
°C
25
--
0
--1.0
0
VGS(off) -- IDSS
--1.4
Cutoff Voltage, VGS(off) -- V
15
ID -- VGS
3.5
3.0
Input Capacitance, Ciss -- pF
10
Drain-to-Source Voltage, VDS -- V
VDS=10V
0
5
IT16770
ID -- VGS
3.5
--0.1V
1.5
0
5
Drain-to-Source Voltage, VDS -- V
2.0
0.5
--0.4V
0
0
VGS=0V
VGS=0V
f=1MHz
7
5
3
2
1.0
7
5
3
2
0.1
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain-to-Source Voltage, VDS -- V
5 7 100
IT16777
No.A2300-2/4
TF412S
PD -- Ta
Allowable Power Dissipation, PD -- mW
120
100
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
HD131212
No.A2300-3/4
TF412S
Package Dimensions
TF412ST5G
SOT-883 (XDFN3), 1.0x0.6, 0.35P
CASE 506CB
ISSUE A
unit : mm
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
A B
D
PIN ONE
REFERENCE
3X
0.10
C
0.10
C
0.10
C
0.10
C
E
DIM
A
A1
b
D
D2
e
E
E2
L
TOP VIEW
NOTE 3
A
A1
SIDE VIEW
C
SEATING
PLANE
E2
e/2
1
2X
0.10
M
C AB
0.05
M
C
3X
b
GENERIC
MARKING DIAGRAM*
XX M
D2
e
MILLIMETERS
MIN
MAX
0.340 0.440
0.000 0.030
0.075 0.200
0.950 1.075
0.620 BSC
0.350 BSC
0.550 0.675
0.425 0.550
0.170 0.300
XX = Specific Device Code
M = Date Code
*This information is generic. Please refer
to device data sheet for actual part
L
BOTTOM VIEW
RECOMMENDED
SOLDER FOOTPRINT*
1.10
2X
2X
0.43
1
0.20
0.41
0.55
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
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PS No.A2300-4/4