TIG052TS-TL-E

TIG052TS Ordering number : ENA1258 SANYO Semiconductors DATA SHEET TIG052TS N-Channel IGBT Light-Controlling Flash Applications Features • • • • • • Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.* Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES 400 Gate-to-Emitter Voltage (DC) VGES ±6 V Gate-to-Emitter Voltage (Pulse) VGES ±8 V Collector Current (Pulse) Channel Temperature ICP dVCE / dt Tch Storage Temperature Tstg Maximum Collector-to-Emitter dv / dt PW≤1ms PW≤500μs, duty cycle≤0.5%, CM=400μF, VGE=2.5V VCE≤320V, starting Tch=25°C V 150 A 400 V / μs 150 °C --40 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Symbol V(BR)CES ICES IGES Conditions IC=2mA, VGE=0V VCE=320V, VGE=0V VGE=±6V, VCE=0V Marking : G052 Ratings min typ max 400 Unit V 10 μA ±10 μA Continued on next page. * : Concerning dv/dt (slope of Collector Voltage at the time of Turn-OFF), dv/dt>400v/μs will be 100% screen-detected in the circuit shown as Fig. 1. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 80608PJ TI IM TC-00001524 No. A1258-1/5 TIG052TS Continued from preceding page. Parameter Symbol Gate-to-Emitter Threshold Voltage Collector-to-Emitter Saturation Voltage VGE(off) VCE(sat) Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Ratings Conditions min VCE=10V, IC=1mA IC=150A, VGE=2.5V VCE=10V, f=1MHz typ 0.4 Package Dimensions 1.0 3.7 VCE=10V, f=1MHz VCE=10V, f=1MHz Unit max 5.5 V V 3800 pF 58 pF 47 pF Electrical Connection unit : mm (typ) 7006A-007 0.95 8 3.0 7 6 5 0.125 5 1 4 1 : Collector 2 : Collector 3 : Collector 4 : Collector 5 : Emitter 6 : Emitter 7 : Emitter 8 : Gate 1.0 1 : Collector 2 : Collector 3 : Collector 4 : Collector 5 : Emitter 6 : Emitter 7 : Emitter 8 : Gate 0.05 6.4 4.5 0.5 8 SANYO : TSSOP8 0.95 0.25 0.425 0.65 1 2 3 4 Top view Fig.1 Large Current R Load Switching Circuit RL + CM=400μF VCC=320V RG TIG052TS 2.5V 0V 100kΩ Note1. Gate Series Resistance RG≥82Ω is recommended for prolection purpose at the time of turn OFF. However, if dv / dt≤400V / μs is satisfied at customer’s actual set evaluation, RG