TIG058E8-TL-H

Ordering number : ENA1381A TIG058E8 N-Channel IGBT http://onsemi.com 400V, 150A, VCE(sat);4V, Single ECH8 Features • • • • Low-saturation voltage Enhansment type Mounting Height 0.9mm, Mounting Area 8.12mm2 Halogen free compliance • • • Low voltage drive (4V) Built-in Gate-to-Emitter protection diode dv / dt guarantee* Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Emitter Voltage Conditions Ratings VCES VGES Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) V ±6 V Maximum Collector-to-Emitter dv / dt VGES ICP dVCE / dt Channel Temperature Tch 150 °C Storage Temperature Tstg -40 to +150 °C Collector Current (Pulse) PW≤1ms Unit 400 CM=150μF, VGE=4V VCE≤320V, starting Tch=25°C ±8 V 150 A 400 V / μs * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-004 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3000 pcs./reel TIG058E8-TL-H Top View Packing Type: TL 0.25 2.9 Marking 0.15 8 5 ZB 2.3 LOT No. TL 4 1 0.65 0.3 Electrical Connection 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector 0.07 0.9 0.25 2.8 0 to 0.02 Bottom View ECH8 Semiconductor Components Industries, LLC, 2013 September, 2013 8 7 6 5 1 2 3 4 60612 TKIM/D1008PJ MSIM TC-00001783 No. A1381-1/7 TIG058E8 Electrical Characteristics at Ta=25°C Parameter Symbol Collector-to-Emitter Breakdown Voltage V(BR)CES ICES IGES IC=2mA, VGE=0V VCE=320V, VGE=0V Collector-to-Emitter Saturation Voltage VGE(off) VCE(sat) VCE=10V, IC=1mA IC=100A, VGE=4V Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage Ratings Conditions min typ Unit max 400 V VGE=±6V, VCE=0V 0.4 4.0 VCE=10V, f=1MHz 10 μA ±10 μA 0.9 V 5.6 V 2200 pF 32 pF 24 pF Fig.1 Large Current R Load Switching Circuit RL CM + VCC RG TIG058E8 4V 0V 100kΩ Note1. Gate Series Resistance RG ≥ 230Ω is recommended for protection purpose at the time of turn OFF. However, if dv / dt ≤ 400V / μs is satisfied at customer’s actual set evaluation, RG < 230Ω can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off. Ordering Information Device Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free TIG058E8-TL-H IC -- VCE Tc=25°C Collector Current, IC -- A 180 V =5.0 VGE 4.0V 160 3.0V 120 2.5V 100 VCE=10V 180 140 80 60 40 Tc= 160 5°C --2 25°C 75°C 140 120 100 80 60 40 20 20 0 IC -- VGE 200 Collector Current, IC -- A 200 0 1 2 3 4 5 6 7 8 Collector-to-Emitter Voltage, VCE -- V 9 10 IT14281 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-to-Emitter Voltage, VGE -- V 4.5 5.0 IT14282 No. A1381-2/7 TIG058E8 VCE -- VGE 9 8 7 6 5 130A 4 100A 3 2 1 2 3 5 6 Gate-to-Emitter Voltage, VGE -- V IT14283 9 8 IC =150A 7 6 130A 5 100A 4 3 1 5 6 Gate-to-Emitter Voltage, VGE -- V 2 3 IT14284 4 VCE(sat) -- Tc 12 Tc=75°C VGE=4V 11 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 9 8 7 IC =15 0A 6 130A 5 100A 4 3 10 9 15 I C= 8 1 2 3 5 6 Gate-to-Emitter Voltage, VGE -- V IT14285 4 VGE(off) -- Tc 0.8 7 130A 6 5 100A 4 2 --50 --25 0 25 0.7 2 0.6 1000 7 5 0.4 0.3 0.2 0 25 50 75 100 125 Case Temperature, Tc -- °C 100 7 5 Coes Cres tf 3 td (off) 2 7 tr 3 2 td(on) 4 6 8 10 12 14 16 18 20 IT14288 SW Time -- RG Test circuit Fig.1 VGE=4V VCC=320V ICP=150A CM=150μF PW=50μs 5 1000 5 2 Collector-to-Emitter Voltage, VCE -- V 7 Test circuit Fig.1 VGE=4V VCC=320V RG=270Ω CM=150μF PW=50μs 5 0 IT14287 SW Time -- ICP 7 f=1MHz 2 10 7 150 150 IT14286 3 2 0.1 --25 125 Cies 3 0 --50 100 75 Cies, Coes, Cres -- VCE 5 0.5 50 Case Temperature, Tc -- °C 3 3 2 1000 ) ff t d(o tf 7 5 tr 3 2 n) t d(o 100 7 5 100 7 0A 3 Cies, Coes, Cres -- pF Collector-to-Emitter Voltage, VCE -- V Tc=25°C 10 2 10 2 Gate-to-Emitter Cutoff Voltage, VGE(off) -- V 4 VCE -- VGE 11 Switching Time, SW Time -- ns Collector-to-Emitter Voltage, VCE -- V 10 IC=150A VCE -- VGE 11 Tc= --25°C Switching Time, SW Time -- ns Collector-to-Emitter Voltage, VCE -- V 11 2 3 5 7 100 Collector Current (Pulse), ICP -- A 2 3 IT14289 3 2 3 5 7 100 2 3 Gate Series Resistance, RG -- Ω 5 7 1000 IT14290 No. A1381-3/7 TIG058E8 dv / dt -- RG Fig.1 Switching test circuit VGE=4V VCC=320V RL=2Ω CM=150μF PW=50μs Turn OFF, dv / dt -- V / μs 1200 1000 800 600 400 200 0 0 50 100 150 200 250 Gate Series Resistance, RG -- Ω CM -- ICP 450 IT14291 160 ICP -- VGE VCE=320V CM=150μF Tc=25°C 140 Tc=70°C 120 100 80 60 40 20 0 0 1 2 3 4 5 6 Gate-to-Emitter Voltage, VGE -- V 7 8 IT14292 VGE=5V VCE=320V CM=150μF Tc≤70°C 400 Maximum Capacitor, CM -- μF 300 180 Collector Current (Pulse), ICP -- A 1400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 Collector Current (Pulse), ICP -- A 140 160 IT14293 No. A1381-4/7 TIG058E8 Embossed Taping Specification TIG058E8-TL-H No. A1381-5/7 TIG058E8 Outline Drawing TIG05E8-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1381-6/7 TIG058E8 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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