TIG064E8
Ordering number : ENA1602A
SANYO Semiconductors
DATA SHEET
TIG064E8
N-Channel IGBT
Light-Controlling Flash Applications
Features
•
•
•
•
Low-saturation voltage
Enhansment type
Mounting Height 0.9mm, Mounting Area 8.12mm2
Halogen free compliance
•
•
•
Low voltage drive (2.5V)
Built-in Gate-to-Emitter protection diode
dv / dt guarantee*
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Emitter Voltage
Conditions
Ratings
VCES
VGES
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
V
±4
V
Maximum Collector-to-Emitter dv / dt
VGES
ICP
dVCE / dt
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-40 to +150
°C
Collector Current (Pulse)
PW≤1ms
Unit
400
VGE=2.5V, CM=100μF
VCE≤320V, starting Tch=25°C
±5
V
150
A
400
V / μs
* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1.
Product & Package Information
Package Dimensions
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3000 pcs./reel
unit : mm (typ)
7011A-004
TIG064E8-TL-H
Top View
Packing Type: TL
0.25
2.9
Marking
0.15
8
5
ZD
2.3
4
1
0.65
0.9
0.25
LOT No.
TL
0.3
Electrical Connection
8
7
6
5
1
2
3
4
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
0.07
2.8
0 t o 0.02
Bot t om View
SANYO : ECH8
http://semicon.sanyo.com/en/network
62012 TKIM/N1809PJ TKIM TC-00002186 No. A1602-1/7
TIG064E8
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector-to-Emitter Breakdown Voltage
V(BR)CES
ICES
IGES
IC=2mA, VGE=0V
VCE=320V, VGE=0V
Collector-to-Emitter Saturation Voltage
VGE(off)
VCE(sat)
VCE=10V, IC=1mA
IC=100A, VGE=2.5V
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Ratings
Conditions
min
typ
Unit
max
400
V
VGE=±4V, VCE=0V
0.4
10
μA
±10
μA
0.9
V
7
V
4.2
VCE=10V, f=1MHz
3100
pF
30
pF
23
pF
Fig.1 Large Current R Load Switching Circuit
RL
CM
+
VCC
RG
TIG064E8
VGE
100kΩ
Note1. Gate Series Resistance RG ≥ 160Ω is recommended for protection purpose at the time of turn OFF. However,
if dv / dt ≤ 400V / μs is satisfied at customer’s actual set evaluation, RG < 160Ω can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off.
Ordering Information
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
Collector Current, IC -- A
V
1.8V
75
50
100
25°
C
75
50
25
25
0
C
125
4.0
100
VCE=10V
75°
C
V
3.0
V
2.5
V
GE =
Collector Current, IC -- A
125
IC -- VGE
150
Tc=25°C
--25
°
IC -- VCE
150
Tc=
Device
TIG064E8-TL-H
0
1
2
3
4
5
6
7
8
Collector-to-Emitter Voltage, VCE -- V
9
10
IT15154
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Gate-to-Emitter Voltage, VGE -- V
3.5
4.0
IT15155
No. A1602-2/7
TIG064E8
VCE -- VGE
8
7
6
130A
100A
3
2.0
2.5
3.0
3.5
4.0
4.5
Gate-to-Emitter Voltage, VGE -- V
7
6
IC=150A
5
130A
100A
3
2.0
2.5
3.0
3.5
4.0
4.5
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VCE(sat) -- Tc
VGE=2.5V
9
8
7
0A
13
6
0A
10
5
4
3
--25
0
25
50
100
75
125
f=1MHz
Cies
3
150
IT15159
Cies, Coes, Cres -- VCE
7
5
VCE=10V
IC=1mA
5.0
IT15157
Case Temperature, Tc -- °C
2
0.7
0.6
0.5
0.4
0.3
0.2
1000
7
5
3
2
100
7
5
Coes
3
Cres
2
0.1
0
--50
--25
0
25
50
75
100
125
Case Temperature, Tc -- °C
3
2
tr
5
3
td(on)
2
2
4
6
8
10
12
14
16
18
Collector-to-Emitter Voltage, VCE -- V
20
IT15161
SW Time -- RG
Switching test circuit Fig.1
VGE=2.5V
VCC=320V
f)
t d(of
ICP=100A
tf
CM=100μF
PW=50μs
tr
5
1000
7
0
7
Switching test circuit Fig.1
VGE=2.5V
VCC=320V
td (off
)
RG=180Ω
tf
CM=100μF
PW=50μs
5
10
7
150
IT15160
SW Time -- ICP
7
3
2
1000
7
5
)
t d(on
3
2
100
100
7
3
IT15158
VGE(off) -- Tc
0.8
100A
2
--50
5.0
Cies, Coes, Cres -- pF
Gate-to-Emitter Cutoff Voltage, VGE(off) -- V
Gate-to-Emitter Voltage, VGE -- V
0.9
4
Gate-to-Emitter Voltage, VGE -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter Voltage, VCE -- V
8
1.5
IC=150A
130A
10
9
2
1.0
5
2
1.0
5.0
Tc= 75°C
4
6
IT15156
VCE -- VGE
10
7
A
1.5
8
50
4
Tc=25°C
9
IC
=1
IC=150A
2
1.0
Switching Time, SW Time -- ns
Collector-to-Emitter Voltage, VCE -- V
9
5
VCE -- VGE
10
Tc= --25°C
Switching Time, SW Time -- ns
Collector-to-Emitter Voltage, VCE -- V
10
2
3
5
7
100
Collector Current (Pulse), ICP -- A
2
3
IT15162
7
0
50
100
150
200
250
300
Gate Series Resistance, RG -- Ω
350
400
IT15163
No. A1602-3/7
TIG064E8
dVCE / dt -- RG
500
400
300
200
100
0
0
50
100
150
200
250
300
350
Gate Series Resistance, RG -- Ω
CM -- ICP
Maximum Capacitor, CM -- μF
300
Tc=25°C
150
100
50
0
0
20
40
60
80
100
120
Collector Current (Pulse), ICP -- A
160
Tc=25°C
140
Tc=70°C
120
100
80
60
40
20
0.5
140
160
IT15166
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Gate-to-Emitter Voltage, VGE -- V
IT15164
Tc=70°C
200
VCE=320V
CM=100μF
0
0
400
VGE=2.5V
VCE=320V
250
ICP -- VGE
180
Collector Current (Pulse), ICP -- A
Switching test circuit Fig.1
VGE=2.5V
VCC=320V
ICP=150A
CM=100μF
PW=50μs
500
Turn OFF dv / dt, dVCE / dt -- V / μs
Turn OFF dv / dt, dVCE / dt -- V / μs
600
dVCE / dt -- Turn OFF IC
VGE=2.5V
Tc=25°C
280V
400
5.5
IT15165
270V
VCE=330V
320V
310V
300V
290V
300
200
100
0
0
20
40
60
80
100
120
140
Turn OFF Collector Current, Turn OFF IC -- A
160
IT15167
No. A1602-4/7
TIG064E8
Embossed Taping Specification
TIG064E8-TL-H
No. A1602-5/7
TIG064E8
Outline Drawing
TIG064E8-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1602-6/7
TIG064E8
Note : TIG064E8 has protection diode between gate and emitter but handling it requires sufficient care
to be taken.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
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This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1602-7/7
