TIP106G

Complementary Silicon Transistors, Plastic, Medium-Power TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) www.onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − = 2500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105 = 80 Vdc (Min) − TIP101, TIP106 = 100 Vdc (Min) − TIP102, TIP107 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc Monolithic Construction with Built−in Base−Emitter Shunt Resistors These Devices are Pb−Free and are RoHS Compliant hFE • • • • DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100 VOLTS, 80 WATTS MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 1 1 2 3 STYLE 1: PIN 1. 2. 3. 4. TIP10x x A Y WW G TIP10xG AYWW BASE COLLECTOR EMITTER COLLECTOR = Device Code = 0, 1, 2, 5, 6, or 7 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November, 2019 − Rev. 15 1 Publication Order Number: TIP100/D TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) MAXIMUM RATINGS Rating Collector − Emitter Voltage Symbol TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 Unit VCEO 60 80 100 Vdc Collector − Base Voltage VCB 60 80 100 Vdc Emitter − Base Voltage VEB 5.0 Vdc Collector Current − Continuous − Peak IC 8.0 15 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 80 0.64 W W/°C Unclamped Inductive Load Energy (1) E 30 mJ Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 0.016 W W/°C TJ, Tstg – 65 to + 150 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 1.56 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 60 80 100 − − − − − − 50 50 50 − − − 50 50 50 − 8.0 1000 200 20,000 − − − 2.0 2.5 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) VCEO(sus) Vdc ICEO mAdc ICBO IEBO mAdc mAdc ON CHARACTERISTICS (1) hFE DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) − Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc) (IC = 8.0 Adc, IB = 80 mAdc) VCE(sat) Vdc Base−Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.8 Vdc Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) hfe 4.0 − − Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob − − 300 200 pF DYNAMIC CHARACTERISTICS TIP105, TIP106, TIP107 TIP100, TIP101, TIP102 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. www.onsemi.com 2 TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) COLLECTOR COLLECTOR BASE BASE ≈ 8.0 k ≈ 120 ≈ 8.0 k ≈ 120 EMITTER EMITTER Figure 1. Darlington Circuit Schematic ORDERING INFORMATION Device Package Shipping TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TIP100 TIP100G TIP101 TIP101G TIP102 TIP102G TIP105 TIP105G TIP106 TIP106G TIP107 TIP107G TC 4.0 80 3.0 60 2.0 40 1.0 20 PD, POWER DISSIPATION (WATTS) TA TC TA 0 0 0 20 40 60 80 100 120 T, TEMPERATURE (°C) Figure 2. Power Derating www.onsemi.com 3 140 160 TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) 5.0 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC -30 V RC SCOPE t, TIME (s) μ RB D1 51 0 V1 approx -12 V ≈ 8.0 k ≈ 120 25 ms 0.7 0.5 0.3 0.2 +4.0 V for td and tr, D1 is disconnected and V2 = 0 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tf 1.0 TUT V2 approx +8.0 V 0.1 0.07 0.05 0.1 For NPN test circuit reverse all polarities. VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. Switching Times Test Circuit 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 PNP NPN ts 3.0 2.0 tr td @ VBE(off) = 0 V 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 4. Switching Times 0.1 0.1 0.07 0.05 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k Figure 5. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150°C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown 20 IC, COLLECTOR CURRENT (A) 10 5ms 5.0 100 ms 2.0 1ms d­ TJ = 150°C c BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 1.0 0.5 0.2 0.1 TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 0.05 0.02 1.0 10 2.0 5.0 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 6. Active−Region Safe Operating Area www.onsemi.com 4 TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) h fe , SMALL-SIGNAL CURRENT GAIN 10,000 5000 3000 2000 TC = 25°C VCE = 4.0 Vdc IC = 3.0 Adc 1000 500 300 200 100 50 30 20 10 1.0 PNP NPN 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 Figure 7. Small−Signal Current Gain 300 TJ = 25°C C, CAPACITANCE (pF) 200 Cob 100 Cib 70 50 PNP NPN 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance www.onsemi.com 5 50 100 TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) NPN TIP100, TIP101, TIP102 PNP TIP105, TIP106, TIP107 20,000 20,000 VCE = 4.0 V VCE = 4.0 V 5000 10,000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 TJ = 150°C 25°C 3000 2000 -55°C 1000 7000 5000 25°C 3000 2000 700 500 300 200 0.1 300 200 0.1 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 -55°C 1000 500 0.2 TJ = 150°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 3.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain TJ = 25°C 2.6 2.2 IC = 2.0 A 4.0 A 6.0 A 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25°C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 5.0 7.0 10 Figure 10. Collector Saturation Region 3.0 3.0 TJ = 25°C TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2.0 1.5 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 0.5 0.1 0.5 0.7 1.0 2.0 3.0 5.0 7.0 VBE @ VCE = 4.0 V 1.5 VBE(sat) @ IC/IB = 250 1.0 VCE(sat) @ IC/IB = 250 0.2 0.3 2.0 VCE(sat) @ IC/IB = 250 0.5 0.1 10 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 11. “On” Voltages www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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