Darlington Complementary
Silicon Power Transistors
TIP140, TIP141, TIP142,
(NPN); TIP145, TIP146,
TIP147, (PNP)
Designed for general−purpose amplifier and low frequency
switching applications.
Features
• High DC Current Gain −
•
•
•
Min hFE = 1000 @ IC
= 5.0 A, VCE = 4 V
Collector−Emitter Sustaining Voltage − @ 30 mA
VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145
= 80 Vdc (Min) − TIP141, TIP146
= 100 Vdc (Min) − TIP142, TIP147
Monolithic Construction with Built−In Base−Emitter Shunt Resistor
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol
TIP140
TIP145
TIP141
TIP146
TIP142
TIP147
Unit
Collector − Emitter Voltage
VCEO
60
80
100
Vdc
Collector − Base Voltage
VCB
60
80
100
Vdc
Emitter − Base Voltage
VEB
5.0
Vdc
Collector Current
− Continuous
− Peak (Note 1)
IC
Base Current − Continuous
IB
0.5
Adc
Total Power Dissipation
@ TC = 25_C
PD
125
W
TJ, Tstg
−65 to +150
_C
Operating and Storage
Junction Temperature Range
Adc
10
15
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−100 VOLTS, 125 WATTS
SOT−93 (TO−218)
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
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Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RqJC
1.0
°C/W
Thermal Resistance,
Junction−to−Ambient
RqJA
35.7
°C/W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. 5 ms, v 10% Duty Cycle.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
July, 2021 − Rev. 7
1
Publication Order Number:
TIP140/D
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
MARKING DIAGRAMS
TO−247
TO−218
TIP14x
AYWWG
AYWWG
TIP14x
1 BASE
1 BASE
3 EMITTER
2 COLLECTOR
2 COLLECTOR
TIP14x
A
Y
WW
G
3 EMITTER
=
=
=
=
=
Device Code
Assembly Location
Year
Work Week
Pb−Free Package
DARLINGTON SCHEMATICS
NPN
TIP140
TIP141
TIP142
PNP
TIP145
TIP146
TIP147
COLLECTOR
BASE
COLLECTOR
BASE
≈ 8.0 k
≈ 40
≈ 8.0 k
EMITTER
≈ 40
EMITTER
ORDERING INFORMATION
Package
Shipping
TIP140G
Device
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP141G
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP142G
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP145G
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP146G
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP147G
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP140G
TO−247
(Pb−Free)
30 Units / Rail
TIP141G
TO−247
(Pb−Free)
30 Units / Rail
TIP142G
TO−247
(Pb−Free)
30 Units / Rail
TIP145G
TO−247
(Pb−Free)
30 Units / Rail
TIP146G
TO−247
(Pb−Free)
30 Units / Rail
TIP147G
TO−247
(Pb−Free)
30 Units / Rail
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2
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
60
80
100
−
−
−
−
−
−
−
−
−
−
−
−
2.0
2.0
2.0
−
−
−
−
−
−
1.0
1.0
1.0
−
−
2.0
1000
500
−
−
−
−
−
−
−
−
2.0
3.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mA, IB = 0)
VCEO(sus)
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
Collector Cutoff Current
(VCB = 60 V, IE = 0)
(VCB = 80 V, IE = 0)
(VCB = 100 V, IE = 0)
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
Vdc
ICEO
mA
ICBO
Emitter Cutoff Current (VBE = 5.0 V)
mA
IEBO
mA
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 5.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 5.0 A, IB = 10 mA)
(IC = 10 A, IB = 40 mA)
VCE(sat)
Vdc
Base−Emitter Saturation Voltage
(IC = 10 A, IB = 40 mA)
VBE(sat)
−
−
3.5
Vdc
Base−Emitter On Voltage
(IC = 10 A, VCE = 4.0 Vdc)
VBE(on)
−
−
3.0
Vdc
td
−
0.15
−
ms
tr
−
0.55
−
ms
ts
−
2.5
−
ms
tf
−
2.5
−
ms
SWITCHING CHARACTERISTICS
Resistive Load (See Figure 1)
Delay Time
Rise Time
Storage Time
(VCC = 30 V, IC = 5.0 A,
IB = 20 mA, Duty Cycle v 2.0%,
IB1 = IB2, RC & RB Varied, TJ = 25_C)
Fall Time
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
10
VCC
-30 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RC
ts
SCOPE
t, TIME (s)
μ
TUT
V2
approx
+12 V
RB
51
0
V1
appox.
-8.0 V
D1
≈ 8.0 k
PNP
NPN
5.0
≈ 40
2.0
tf
1.0
tr
0.5
+4.0 V
25 ms
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
td @ VBE(off) = 0
0.2
for td and tr, D1 is disconnected
and V2 = 0
0.1
0.2
For NPN test circuit reverse diode and voltage polarities.
Figure 1. Switching Times Test Circuit
0.5
1.0
3.0
5.0
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times
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3
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
10
20
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
TYPICAL CHARACTERISTICS
NPN
TIP140, TIP141, TIP142
PNP
TIP145, TIP146, TIP147
20,000
TJ = 150°C
TJ = 150°C
100°C
25°C
2000
-55°C
1000
500
100°C
10,000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
5000
7000
25°C
5000
-55°C
3000
2000
VCE = 4.0 V
300
0.5
VCE = 4.0 V
1.0
2.0
3.0 4.0 5.0
IC, COLLECTOR CURRENT (AMPS)
7.0
1000
0.5
10
0.7
1.0
2.0
3.0 4.0 5.0
IC, COLLECTOR CURRENT (AMPS)
7.0
10
VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
Figure 3. DC Current Gain versus Collector Current
5.0
3.0
2.0
IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA
1.0
IC = 1.0 A, IB = 2.0 mA
0.7
0.5
-75
-50
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
175
5.0
3.0
2.0
IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA
1.0
IC = 1.0 A, IB = 2.0 mA
0.7
0.5
-75 -50
-25
0
25 50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
175
4.0
3.6
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 4. Collector−Emitter Saturation Voltage
VCE = 4.0 V
3.2
2.8
2.4
IC = 10 A
2.0
1.6
5.0 A
1.2
0.8
-75
1.0 A
-25
25
75
125
4.0
3.6
3.2
2.8
2.4
IC = 10 A
2.0
1.6
5.0 A
1.2
0.8
-75
175
VCE = 4.0 V
1.0 A
-25
25
75
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Base−Emitter Voltage
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4
125
175
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
ACTIVE−REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMP) (mA)
20
10
7.0
5.0
3.0
2.0
dc
TJ = 150°C
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25°C
1.0
TIP140, 145
TIP141, 146
TIP142, 147
20
30
50
15
70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.2
10
15
10
7.0
5.0
100 mJ
2.0
1.0
0.5 1.0
2.0
5.0
10 20
L, UNCLAMPED INDUCTIVE LOAD (mH)
100
Figure 6. Active−Region Safe Operating Area
Figure 7. Unclamped Inductive Load
VCE MONITOR
INPUT
VOLTAGE
COLLECTOR
CURRENT
MPS-U52
100 mH
RBB1
INPUT
50
TUT
1.5k
50
VCC = 20 V
IC
MONITOR
RBB2
= 100
VBB2 = 0
VBB1 = 10 V
50
RS = 0.1
w ≈ 7.0 ms (SEE NOTE 1)
5.0 V
0
100 ms
0
1.42 A
VCE(sat)
-20 V
COLLECTOR
VOLTAGE
V(BR)CER
TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A.
NOTE 2: For NPN test circuit reverse polarities.
VOLTAGE AND CURRENT WAVEFORMS
Figure 8. Inductive Load
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5
100
hfe , SMALL-SIGNAL FORWARD CURRENT
TRANSFER RATIO
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
100
70
50
VCE = 10 V
IC = 1.0 A
TJ = 25°C
PNP
PNP
NPN
20
10
7.0
5.0
NPN
2.0
1.0
1.0
2.0
3.0
5.0
f, FREQUENCY (MHz)
7.0
10
Figure 9. Magnitude of Common Emitter
Small−Signal Short−Circuit Forward
Current Transfer Ratio
PD, POWER DISSIPATION (WATTS)
5.0
4.0
3.0
2.0
1.0
0
0
40
80
120
160
TA, FREE-AIR TEMPERATURE (°C)
200
Figure 10. Free−Air Temperature Power Derating
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
SCALE 1:1
C
Q
B
U
S
E
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
4
A
L
1
K
2
3
D
DATE 01/03/2002
J
H
MILLIMETERS
MIN
MAX
--20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
--16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
INCHES
MIN
MAX
--0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
--0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
MARKING DIAGRAM
V
G
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
AYWW
xxxxx
ANODE
CATHODE
ANODE
CATHODE
A
Y
WW
xxxxx
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42643B
SOT−93
= Assembly Location
= Year
= Work Week
= Device Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340L
ISSUE G
DATE 06 OCT 2021
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
STYLE 1:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 2:
PIN 1.
2.
3.
4.
ANODE
CATHODE (S)
ANODE 2
CATHODES (S)
STYLE 5:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 6:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 3:
PIN 1.
2.
3.
4.
98ASB15080C
TO−247
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 4:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
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purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2021
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Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
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