TIP2955G

TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general−purpose switching and amplifier applications. http://onsemi.com Features • DC Current Gain − • • • 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS hFE = 20−70 @ IC = 4.0 Adc Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excellent Safe Operating Area These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 60 Vdc Collector − Emitter Voltage VCER 70 Vdc Collector − Base Voltage VCB 100 Vdc Emitter − Base Voltage VEB 7.0 Vdc Collector Current − Continuous IC 15 Adc Base Current IB 7.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 90 0.72 W W/°C TJ, Tstg –65 to +150 °C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.39 °C/W Thermal Resistance, Junction−to−Ambient RqJA 35.7 °C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SOT−93 (TO−218) CASE 340D STYLE 1 TO−247 CASE 340L STYLE 3 NOTE: Effective June 2012 this device will be available only in the TO−247 package. Reference FPCN# 16827. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 7 1 Publication Order Number: TIP3055/D TIP3055 (NPN), TIP2955 (PNP) MARKING DIAGRAMS TO−247 TO−218 TIPxx55 AYWWG 1 BASE AYWWG TIPxx55 3 EMITTER 1 BASE 2 COLLECTOR 2 COLLECTOR TIPxx55 A Y WW G 3 EMITTER = = = = = Device Code Assembly Location Year Work Week Pb−Free Package ORDERING INFORMATION Device Package Shipping TIP3055G SOT−93 (TO−218) (Pb−Free) 30 Units / Rail TIP2955G SOT−93 (TO−218) (Pb−Free) 30 Units / Rail TIP3055G TO−247 (Pb−Free) 30 Units / Rail TIP2955G TO−247 (Pb−Free) 30 Units / Rail http://onsemi.com 2 TIP3055 (NPN), TIP2955 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 − Vdc Collector Cutoff Current (VCE = 70 Vdc, RBE = 100 Ohms) ICER − 1.0 mAdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO − 0.7 mAdc Collector Cutoff Current (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) ICEV − 5.0 mAdc Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO − 5.0 mAdc 20 5.0 70 − − − 1.1 3.0 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) VCE(sat) Vdc Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − 1.8 Vdc Is/b 3.0 − Adc Current Gain — Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.5 − MHz Small−Signal Current Gain (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz) hfe 15 − kHz SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 30 Vdc, t = 1.0 s; Nonrepetitive) DYNAMIC CHARACTERISTICS NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. http://onsemi.com 3 TIP3055 (NPN), TIP2955 (PNP) hFE , DC CURRENT GAIN 1000 VCE = 4.0 V TJ = 25°C 100 10 0.1 TIP3055 TIP2955 0.2 0.5 0.7 1.0 0.3 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 1. DC Current Gain There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature. IC, COLLECTOR CURRENT (AMPS) 100 50 30 20 1.0ms 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1.0 300 ms dc 10ms SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C TJ = 150°C 40 60 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Maximum Rated Forward Bias Safe Operating Area http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. SCALE 1:1 C Q B U S E DIM A B C D E G H J K L Q S U V 4 A L 1 K 2 3 D DATE 01/03/2002 J H MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 MARKING DIAGRAM V G STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. AYWW xxxxx ANODE CATHODE ANODE CATHODE A Y WW xxxxx DOCUMENT NUMBER: DESCRIPTION: 98ASB42643B SOT−93 = Assembly Location = Year = Work Week = Device Code Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2021 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative