TIP31G, TIP31AG, TIP31BG,
TIP31CG (NPN),
TIP32G,TIP32AG, TIP32BG,
TIP32CG(PNP)
Complementary Silicon
Plastic Power Transistors
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Designed for use in general purpose amplifier and switching
applications.
Features
• High Current Gain − Bandwidth Product
• Compact TO−220 Package
• These Devices are Pb−Free and are RoHS Compliant*
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40−60−80−100 VOLTS,
40 WATTS
PNP
MAXIMUM RATINGS
Rating
Symbol
Collector − Emitter Voltage
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
Value
Unit
VCEO
1
BASE
VCB
Emitter−Base Voltage
VEB
5.0
Vdc
IC
3.0
Adc
Collector Current − Peak
Vdc
40
60
80
100
ICM
5.0
Adc
IB
1.0
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
Unclamped Inductive Load Energy
(Note 1)
40
0.32
W
W/°C
2.0
0.016
W
W/°C
E
32
mJ
TJ, Tstg
– 65 to + 150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
Thermal Resistance, Junction−to−Case
RqJC
3.125
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
September, 2015 − Rev. 16
3
EMITTER
3
EMITTER
TO−220
CASE 221A
STYLE 1
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
© Semiconductor Components Industries, LLC, 2015
1
BASE
4
Base Current
Operating and Storage Junction Temperature Range
COLLECTOR
2,4
Vdc
40
60
80
100
Collector−Base Voltage
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
Collector Current − Continuous
NPN
COLLECTOR
2,4
1
2
3
MARKING DIAGRAM
TIP3xxG
AYWW
TIP3xx
xx
A
Y
WW
G
= Device Code
= 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,
= Assembly Location
= Year
= Work Week
Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Publication Order Number:
TIP31A/D
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
VCEO(sus)
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP31G, TIP32G, TIP31AG, TIP32AG
(VCE = 60 Vdc, IB = 0)
TIP31BG, TIP31CG, TIP32BG, TIP32CG
ICEO
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
TIP31G, TIP32G
(VCE = 60 Vdc, VEB = 0)
TIP31AG, TIP32AG
(VCE = 80 Vdc, VEB = 0)
TIP31BG, TIP32BG
(VCE = 100 Vdc, VEB = 0)
TIP31CG, TIP32CG
ICES
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
40
60
80
100
−
−
−
−
mAdc
−
0.3
−
0.3
mAdc
−
200
−
200
−
200
−
200
−
1.0
25
10
−
50
−
1.2
−
1.8
3.0
−
20
−
mAdc
ON CHARACTERISTICS (Note 2)
hFE
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 375 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = 3.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
MHz
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
40 4.0
TC
30 3.0
20 2.0
TA
10 1.0
0
0
0
40
20
60
80
100
140
120
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
TURN−ON PULSE
APPROX
+11 V
VCC
RC
SCOPE
Vin
Vin 0
RB
VEB(off)
t1
Cjd