TIP42CTU-T

TIP42 / TIP42C — PNP Epitaxial Silicon Transistor TIP42 / TIP42C PNP Epitaxial Silicon Transistor Features • Medium Power Linear Switching Applications • Complement to TIP41 Series TO-220 1 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP42 TIP42 TO-220 3L (Single Gauge) Bulk TIP42C TIP42C TO-220 3L (Single Gauge) Bulk TIP42CTU TIP42C TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value TIP42 -40 TIP42C -100 TIP42 -40 TIP42C -100 Unit VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -6 A ICP Collector Current (Pulse) -10 A IB Base Current -2 A TJ Junction Temperature 150 °C -65 to 150 °C TSTG Storage Temperature Range © 2000 Semiconductor Components Industries, LLC. November-2017, Rev. 2 V V Publication Order Number: TIP42C/D Values are at TC = 25°C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TC = 25°C) 65 Collector Dissipation (TA = 25°C) 2 Unit W Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol VCEO(sus) Parameter Collector-Emitter Sustaining TIP42 Voltage(1) TIP42C ICEO Collector Cut-Off Current ICES Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE DC Current Gain(1) VCE(sat) VBE(on) fT Conditions Collector-Emitter Saturation Base-Emitter On IC = -30 mA, IB = 0 Min. Max. -40 V -100 TIP42 VCE = -30 V, IB = 0 -0.7 TIP42C VCE = -60 V, IB = 0 -0.7 TIP42 VCE = -40 V, VEB = 0 -400 TIP42C VCE = -100 V, VEB = 0 -400 VEB = -5 V, IC = 0 Voltage(1) Voltage(1) Current Gain Bandwidth Product -1 VCE = -4 V, IC = -0.3 A 30 VCE = -4 V, IC = -3 A 15 Unit mA μA mA 75 IC = -6 A, IB = -600 mA -1.5 V VCE = -4 V, IC = -6 A -2.0 V VCE = -10 V, IC = -500 mA, f = 1 MHz Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. www.onsemi.com 2 3.0 MHz TIP42 / TIP42C — PNP Epitaxial Silicon Transistor Thermal Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = -4V 100 10 1 -0.01 -0.1 -1 -10 -2.0 IC/IB = 10 -1.6 VBE(sat) -1.2 -0.8 VCE(sat) -0.4 -0.0 -0.01 -0.1 IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain -10 -100 IC[A], COLLECTOR CURRENT Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 100 IC(MAX) (PULSE) -10 ms 0.5 s 5m s 1m IC(MAX) (DC) -1 TIP42 TIP42A TIP42B TIP42C PC[W], POWER DISSIPATION -100 IC[A], COLLECTOR CURRENT -1 80 60 40 20 0 -0.1 -1 -10 0 -100 25 50 75 100 125 o 150 TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area Figure 4. Power Derating www.onsemi.com 3 175 TIP42 / TIP42C — PNP Epitaxial Silicon Transistor Typical Performance Characteristics TIP42 / TIP42C — PNP Epitaxial Silicon Transistor Physical Dimensions Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB www.onsemi.com 4 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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