TIP50G

TIP47G, TIP48G, TIP50G High Voltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. www.onsemi.com Features • Popular TO−220 Plastic Package • Complementary to the MJE5730 and MJE5731 Series • These Devices are Pb−Free and are RoHS Compliant* 1.0 AMPERE POWER TRANSISTORS NPN SILICON 250−300− 400 VOLTS 40 WATTS MAXIMUM RATINGS Rating Symbol TIP47 TIP48 TIP50 Unit VCEO 250 300 400 Vdc Collector − Base Voltage VCB 350 400 500 Vdc Emitter − Base Voltage VEB 5.0 Vdc IC 1.0 Adc ICM 2.0 Adc Base Current IB 0.6 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 40 0.32 W W/_C Total Power Dissipation @ TC = 25_C Derate above 25_C PD 2.0 0.016 W W/_C Unclamped Inducting Load Energy (See Figure 8) E 20 mJ TJ, Tstg −65 to +150 _C Collector − Emitter Voltage Collector Current − Continuous Collector Current − Peak Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.125 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W COLLECTOR 2,4 1 BASE 3 EMITTER MARKING DIAGRAM 4 1 TO−220AB CASE 221A STYLE 1 2 TIPxxG AYWW 3 TIPxx xx A Y WW G = Device Code = 47, 48, or 50 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 October, 2014 − Rev. 11 1 Publication Order Number: TIP47/D TIP47G, TIP48G, TIP50G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 250 300 400 − − − Vdc − − − 1.0 1.0 1.0 − − − 1.0 1.0 1.0 − 1.0 30 10 150 − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) TIP47 TIP48 TIP50 Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 200 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) TIP47 TIP48 TIP50 Collector Cutoff Current (VCE = 350 Vdc, VBE = 0) (VCE = 400 Vdc, VBE = 0) (VCE = 500 Vdc, VBE = 0) TIP47 TIP48 TIP50 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ICEO mAdc ICES IEBO mAdc mAdc ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) − Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) VCE(sat) − 1.0 Vdc Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc) VBE(on) − 1.5 Vdc Current−Gain − Bandwidth Product (IC = 0.1 Adc, VCE = 10 Vdc, f = 2.0 MHz) fT 10 − MHz Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 25 − − DYNAMIC CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device Package Shipping TIP47G TO−220 (Pb−Free) 50 Units / Rail TIP48G TO−220 (Pb−Free) 50 Units / Rail TIP49G TO−220 (Pb−Free) 50 Units / Rail TIP50G TO−220 (Pb−Free) 50 Units / Rail www.onsemi.com 2 PD, POWER DISSIPATION (WATTS) TIP47G, TIP48G, TIP50G TA 4 TC 40 3 30 2 20 1 10 0 0 TC TA 0 20 40 60 100 120 80 TC, CASE TEMPERATURE (°C) 140 160 Figure 1. Power Derating TURN-ON PULSE APPROX +11 V 1.0 VCC RC TJ = 25°C VCC = 200 V IC/IB = 5.0 0.5 Vin 0 VEB(off) SCOPE Vin t1 t3 APPROX +11 V Cjd