TIS93_J35Z

TIS93_J35Z

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO92-3

  • 描述:

    TRANS PNP 40V 0.8A TO-92

  • 详情介绍
  • 数据手册
  • 价格&库存
TIS93_J35Z 数据手册
TIS93 TIS93 PNP General Purpose Amplifier • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value -40 VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -800 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C - Continuous Units V * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * Test Condition Min. Max. Units IC = -10mA, IB = 0 -40 V(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -40 V V V(BR)EBO Emitter-Base Breakdown Voltage IE = -100µA, IC = 0 -5.0 V ICBO Collector Cut-off Current VCB = -20V, IE = 0 -100 nA IEBO Emitter Cut-off Current VEB = -3.0V, IC = 0 - 100 nA On Characteristics hFE DC Current Gain VCE = -2.0V, IC = -50mA VCE(sat) Collector-Emitter Saturation Voltage IC = -50mA, IB = -5.0mA -0.25 V VBE(on) Base-Emitter On Voltage VCE = -2.0V, IC = -50mA -1.0 V 100 300 * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 Symbol PD Total Device Dissipation Derate above 25°C Parameter Max. 625 5.0 Units mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 TIS93 Thermal Characteristics TA=25°C unless otherwise noted TIS93 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1
TIS93_J35Z
- 物料型号:TIS93 - 器件简介:该设备设计用于作为通用放大器和开关,需要的集电极电流高达500mA。 - 引脚分配:1. 集电极,2. 基极,3. 发射极。 - 参数特性: - 绝对最大额定值:包括集电极-发射极电压(-40V),集电极-基极电压(-40V),发射极-基极电压(-5.0V)等。 - 电气特性:包括截止状态和导通状态下的参数,如集电极截止电流(-100nA至-800mA),直流电流增益(hFE: 100至300),饱和压降(Vce(sat): 最大-0.25V)等。 - 功能详解:文档提供了详细的电气特性表,包括截止和导通状态下的参数。 - 应用信息:适用于需要集电极电流高达500mA的通用放大器和开关。 - 封装信息:TO-92封装,文档还提供了详细的封装尺寸。
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