TN4033A
TN4033A
C
TO-226
B
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at currents to 500 mA and collector voltages up to 70V.
Sourced from Process 67.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
80
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
TJ, Tstg
Operating and Storage Junction Temperature Range
1.0
A
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1997 Fairchild Semiconductor Corporation
Max
Units
TN4033A
1.0
8.0
125
W
mW/°C
°C/W
50
°C/W
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Sustaining Voltage*
IC = 10 mA, IB = 0
80
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
80
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
V
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0, TA = 150°C
VEB = 5.0 V, IC = 0
50
50
10
nA
µA
µA
ON CHARACTERISTICS
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 100 µA, VCE = 5.0 V
IC=100mA, VCE=5.0V,TA = -55°C
IC = 100 mA, VCE = 5.0 V
IC = 500 mA, VCE = 5.0 V
IC = 1.0 A, VCE = 5.0 V
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
VBE(on)
Base-Emitter On Voltage
IC = 500 mA, VCE = 0.5 V
hFE
DC Current Gain
75
40
100
70
25
300
0.15
0.5
0.9
V
V
V
1.1
V
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
20
pF
Cibo
Input Capacitance
VEB = 0.5 V, IC = 0, f = 1.0 MHz
110
pF
hfe
Small-Signal Current Gain
IC = 50 mA, VCE = 10 V,
f = 100 MHz
1.0
4.0
SWITCHING CHARACTERISTICS
ts
Storage Time
IC = 500 mA, IB1 = IB2 = 50 mA
350
ns
ton
Turn-On Time
IC = 500 mA, IB1 = 50 mA
100
ns
tf
Fall Time
IC = 500 mA, IB1 = IB2 = 50 mA
50
ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
TN4033A
PNP General Purpose Amplifier
(continued)
300
V CE = 5V
250
200
125 °C
150
25 °C
100
50
- 40 °C
0
0.1
0.3
1
3
10
30
100 300
I C - COLLECTOR CURRENT (mA)
1000
Base-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
1
- 40 °C
0.8
25 °C
125 °C
0.6
0.4
10
IC
100
- COLLECTOR CURRENT ( mA)
1000
V CESAT - COLLE CTOR-EMITTER VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
0.6
β = 10
0.4
25 °C
125 °C
0.2
- 40 °C
10
100
I C - COLLECTOR CURRENT (mA)
1000
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8
- 40 °C
0.6
25 °C
0.4
0.2
0.1
125 °C
1
10
I C - COLLECTOR CURRENT (mA)
50
Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
100
500
f = 1.0 MHz
V CB = 50V
CAPACITANCE (pF)
I CBO - COLLECTOR CURRENT (nA)
Collector-Emitter Saturation
Voltage vs Collector Current
V BE(O N)- BASE-E MITTER ON VOLTAGE (V)
V BESAT - BASE-EMITTER VOLTAG E (V)
h
FE-
TYPICAL PULSED CURRENT GAIN
Typical Characteristics
10
1
0.1
200
100
50
C ibo
20
C obo
10
25
50
75
100
125
T A - AMBIENT TE MPE RATURE (° C)
150
6
0.1
1
10
REVERSE BIAS VOLTAGE (V)
50
TN4033A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Switching Times vs
Collector Current
Turn On and Turn Off Times vs
Collector Current
240
500
V CE = -10V
t off
400
TIME (ns)
160
V CE = -1.0V
120
80
0
I B1 = I B2 = I C
V CC = - 30V 10
300
200
100
40
1
2
20
100
I C - COLLECTOR CURRENT (mA)
200
t on
0
10
100
500
I C - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)
TIME (ns)
200
TO-226
0.75
0.5
0.25
0
0
25
50
75
100
TEMPERATURE ( o C)
125
150
1000
TN4033A
PNP General Purpose Amplifier
TO-226AE Tape and Reel Data
TO -226AE Packaging
Conf iguratio n:
Fi gur e 1.0
TAPE and REEL OPTION
FSCINT Label sampl e
See Fig 2.0 for va rious
FAIRCHIL D S EMICONDUCTOR CORPORATION
L OT:
CBVK741B019
PN2222N
NSID:
D/C1:
QTY:
Reeling Styles
HTB:B
10000
SP EC:
FSCINT
D9842
SP EC RE V:
Labe l
B2
QA REV:
5 Reels per
Int er med iate B ox
(FSCINT)
Cus tom ized
F63TNR Label s ampl e
Labe l
LOT: CBVK7 41B019
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D/C1: D9842
D/C2:
F63TNR
QTY: 2000
Labe l
SPEC:
QTY1:
QTY2:
SPEC REV:
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N/F: F
Cus tom ized
Labe l
(F63TNR)3
375m m x 267m m x 375mm
Int er med iate B ox
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
TO-226AE TNR/AMMO PACKING INFO RMATION
Packing
Style
Quantity
Reel
A
2,000
D26Z
E
2,000
D27Z
Am m o
M
P
EOL code
2,000
Uni t wei gh t
FSCINT
D74Z
2,000
Labe l
D75Z
327m m x 158m m x 135mm
= 0.300g m
Reel weig ht wi th c om po nents
= 0.868 k g
Amm o weig ht wi th c omp on en ts
= 0.880 k g
Im med iate B ox
5 A mm o box es per
Int er med iate B ox
Cus tom ized
Labe l
Max q uanti ty p er i nte rm ed iate b ox = 10,000 un its
Cus tom ized
Labe l
F63TNR
Bar c ode Label
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Int er med iate B ox
BULK OPTION
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Anti -stati c
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Bub ble Sheets
(TO-226AE ) BULK PACKING INFORMATION
EOL CODE
J18Z
J05Z
NO EOL
CODE
DESCRIPTION
LEADCLIP
DIMENSION
QUANTITY
TO-18 OPTION STD
NO L EAD CLIP
1.0 K / BOX
TO-5
NO L EAD CLIP
1.0 K / BOX
NO L EADCLIP
1.5 K / BOX
OPTION STD
TO-226 STANDARD
STRAIGHT
1,500 un its per
114m m x 102m m x 51mm
EO70 box for
s td o pti on
EO70 Im mediate B ox
5 EO70 boxes pe r
Int er med iate B ox
530m m x 130m m x 83mm
Inter med iate box
Cus tomized
Label
FSCINT Labe l
7,500 un its m axim um
per interm edi at e box
for st d opt ion
©2000 Fairchild Semiconductor International
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
TO-226AE Reeling Style
Configuration: Fi gure 2.0
Machine Option "A" (H)
Machine Option "E"(J)
Style "A" D26Z, D70Z (s/h)
Style "E" D 27Z, D71Z (s/h)
TO-226AE Radial Ammo Packaging
Configuration: Fi gure 3.0
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FIRST WIRE OFF IS COL LECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON THE TOP SIDE
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS EMITTER
FIRST WIRE OFF IS COL LECTOR
ADHESIVE TAPE IS ON BOTTOM SIDE
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FLAT OF TRANSISTOR IS ON TOP
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
TO-226AE Tape and Reel Taping
Dimension Configuration:
Fi gur e 4.0
Hd
P
Pd
b
Hb
W1
d
L
H1
HO
L1
S
WO
t
W2
W
t1
P1
F1
DO
P2
PO
User Direction of Feed
TO-226AE Reel
Configuration:
Fi gur e 5.0
ITEM DESCRI PTION
SYM BOL
DIMENSION
Base of Package to Lead Bend
b
0.098 (max)
Component Height
Hb
1.078 (+/- 0.050)
Lead Clinch He ight
HO
0.630 (+/- 0.020)
Component Base Heig ht
H1
0.748 (+/- 0.020)
Component Alignment (s ide / side )
Pd
0.040 (max)
Component Alignment ( front/back )
Hd
0.031 (max)
Component Pitch
P
0.500 (+/- 0.020)
Feed Hole Pitch
PO
0.500 (+/- 0.008)
Hole Center to First Lead
P1
0.150 (+0.009, -0.010 )
Hole Center to Component Center
P2
0.247 (+/- 0.007)
Lead Spread
F1/F2
0.104 (+/- 0 .010)
Lead Thickness
d
0.018 (+0.002, -0.003)
Cut Lead Length
L
0.429 (max)
Taped Lead Lengt h
L1
0.209 (+0.051, -0.052)
Taped Lead Thickness
t
0.032 (+/- 0.006)
Carrier Tape Thickness
t1
0.021 (+/- 0.006)
Carrier Tape Width
W
0.708 (+0.020, -0.019)
Hold - down Tape Width
WO
0.236 (+/- 0.012)
Hold - down Tape position
W1
0.035 (max)
Feed Hole Position
W2
0.360 (+/- 0.025)
Sprocket Hole Diameter
DO
0.157 (+0.008, -0.007)
Lead Spring O ut
S
0.004 (max)
Note : All dimensions are in inches.
E LE CT ROS TA TIC
S EN SI TIV E D EV ICE S
D4
D1
D2
F63TNR Label
ITEM DESCRIPT ION
SYMBOL
Reel Diamet er
D1
13.975
Arbor Hole Diameter (Standard)
D2
1.160
1.200
(Small Hole)
D2
0.650
0.700
Customized Label
MAXIMUM
14.025
Core Diameter
D3
3.100
3.300
Hub Recess Inner Diameter
D4
2.700
3.100
Hub Recess Dept h
W1
MINIMUM
W1
0.370
0.570
Flange to Flange Inner W idth
W2
1.630
1.690
Hu b to Hu b Cente r W idth
W3
2.09 0
W3
W2
Note: All dimensions are inches
D3
October 1999, Rev. A1
TO-226AE Package Dimensions
TO-226AE (FS PKG Code 95, 99)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.300
S4.70-4.32;
S1.52-1.02;
2" TYP
S7.73-7.10;
S7.87-7.37;
2" TYP
S1.65-1.27;
0.51
S0.760.36;
S15.61-14.47;
S0.51-0.36;
S0.48-0.30;
S1.40-1.14;
PIN
S1.40-1.14;
99
95
1
E
E
2
B
C
3
C
B
S4.45-3.81;
5" TYP
1
2
3
TO-226AE (95,99)
S2.41-2.13;
©2000 Fairchild Semiconductor International
For leadformed option ordering,
refer to Tape & Reel data information.
October 1999, Rev. A1
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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This datasheet contains final specifications. Fairchild
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Obsolete
Not In Production
This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
Rev. G
