TN6705A

TN6705A C TO-226 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. See TN6715A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 45 VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.5 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient  1997 Fairchild Semiconductor Corporation Max Units TN6705a 1.0 8.0 125 W mW/°C °C/W 50 °C/W TN6705A Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 10 mA, I B = 0 45 V(BR)CBO Collector-Base Breakdown Voltage I C = 100 mA, I E = 0 60 V V V(BR)EBO Emitter-Base Breakdown Voltage I E = 1.0 mA, I C = 0 5.0 V ICBO Collector Cutoff Current VCB = 60 V, IE = 0 0.1 µA IEBO Emitter Cutoff Current VEB = 5.0 V, I C = 0 0.1 µA ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage VBE( on) Base-Emitter On Voltage VCE = 2.0 V, IC = 50 mA VCE = 2.0 V, IC = 250 mA VCE = 2.0 V, IC = 500 mA I C = 500 mA, IB = 50 mA I C = 1.0 A, IB = 100 mA VCE = 2.0 V, IC = 1.0 A 40 40 25 250 0.5 1.0 1.5 V V V 30 pF SMALL SIGNAL CHARACTERISTICS Ccb Collector-Base Capacitance VCB = 10 V, f = 1.0 MHz hfe Small-Signal Current Gain I C = 50 mA, VCE = 5.0 V, f = 20 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 2.5 20 TN6705A NPN General Purpose Amplifier