TN6725A_D75Z

TN6725A CB TO-226 E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCES Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.2 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Characteristic Symbol Units TN6725A PD Total Device Dissipation Derate above 25°C 1 8 W mW/°C RθJC Thermal Resistance, Junction to Case 50 °C/W RθJA Thermal Resistance, Junction to Ambient 125 °C/W  1997 Fairchild Semiconductor Corporation TN6725A, Rev A TN6725A Discrete Power & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCES Collector-Emitter Breakdown Voltage IC = 1 mA 50 V BVCBO Collector-Base Breakdown Voltage IC = 100 µA 60 V BVEBO Emitter-Base Breakdown Voltage IE = 10 µA 12 V ICBO Collector Cutoff Current VCB = 40 V 100 nA IEBO Emitter Cutoff Current VEB = 10 V 100 nA ON CHARACTERISTICS* hFE DC Current Gain IC = 200 mA, VCE = 5 V IC = 500 mA, VCE = 5 V IC = 1A, VCE = 5 V VCE(sat) Collector-Emitter Saturation Voltage 25,000 15,000 4000 40,000 IC = 200 mA, IB = 2 mA IC = 1 A, IB = 2 mA - 1.0 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 1 A, IB = 2 mA 2 V VBE(on) Base-Emitter On Voltage IC = 1 A, VCE = 5.0 V 2 V 10 pF 10 - SMALL SIGNAL CHARACTERISTICS Ccb Output Capacitance VCB = 10 V, IE = 0, f = 1MHz hfe Small Signal Current Gain IC = 200 mA,VCE = 5 V, f=100MHz 1 *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%  1997 Fairchild Semiconductor Corporation TN6725A, Rev A TN6725A NPN Darlington Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET  VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4