TN8D51A-HB11-E

TN8D51A Ordering number : ENA0985 SANYO Semiconductors DATA SHEET ExPD (Excellent-Performance Power & RF Device) TN8D51A Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET). Over current protection (Self recovery type). Under voltage protection. Over temperature protection function (Self recovery type). Soft start function (Variable subject to externally-connected capacitor). Stand-by mode function (Compatible with soft start terminal). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Maximum Input Voltage VIN max 57 V Maximum Output Current IO max 8 A Drain-to-Source Voltage of built-in MOSFET VDSS --60 V ID --12 A --48 A Drain Current of built-in MOSFET (DC) Drain Current of built-in MOSFET (Pulse) FB Pin Maximum Input Voltage IDP Vfb SS Pin Maximum Input Voltage VSS Allowable Power Dissipation PD Operating Temperature Topr Junction Temperature Tj Storage Temperature Tstg PW≤10μs, duty cycle≤1% Tc=25°C 15 V 7 V 2.0 W 20 W --25 to +125 °C 150 °C --55 to +150 °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 90308IQ TI IM TC-00001590 No. A0985-1/11 TN8D51A Recommend Operating Conditions Parameter Symbol Input Voltage Output Current Operating Temperature Range Conditions Ratings Unit VIN Ta=25°C 20 to 48 V IOUT Topr rec Ta=25°C 0 to 8 A --10 to +85 °C Electrical Characteristics at Ta=25°C, See Specified Test Circuit Parameter Symbol Output Voltage Conditions VOUT Efficiency η Drain-to-Source Breakdown Voltage V(BR)DSS of built-in MOSFET Drain-to-Source On Resistance RDS(on) of built-in MOSFET Switching Frequency Freq 11.7 ID=--1mA, VIN,GND,Vfb,VSS=0V --60 VIN=30V, IOUT=3A VIN=30V, Vfb=0V Line Regulation ΔVline VIN=20 to 40V, IOUT=3A ΔVload VIN=30V, IOUT=0.8 to 8A ΔVO / ΔTa Over-Current-Protection-Operation Iocp -Threshold Voltage Under-Voltage-Protection-Operation -Release Voltage Under-Voltage-Protection Hysteresis Voltage Over-Temperature-Protection-Operation -Threshold-Current *1 Over-Temperature-Protection-Operation -Release Temperature *1 Over-Temperature-Protection -Hysteresis Temperature *1 SS Terminal Current V % V mΩ 120 150 180 88 92 96 kHz % 130 200 mV 70 100 mV mV / °C ±1.2 12 16 A Vuvlo on 7.2 8.0 8.8 V Vuvlo off 8.1 9.0 9.9 V Vuvlo hys 1.0 V Ttsd on 165 °C Ttsd off 140 °C Ttsd hys 25 °C 10 μA ISS Vstb on Standby Operating Voltage 12.4 8.1 -Threshold Current Under-Voltage-Protection-Operation 12.0 80 VIN=30V, IOUT=3A, Ta= --25 to +125°C VIN=30V Unit max 92 ISW=5A Duty max Output Voltage Temperature Coefficient *1 typ VIN=30V, IOUT=3A VIN=30V, IOUT=3A Maximum Duty Load Regulation Ratings min Standby Current Istb VIN=30V VIN=30V VIN=30V, VSS=0V 0.3 V 500 μA Note: the values with "*1" are our targeted values, but not guaranteed. Package Dimensions unit : mm (typ) 7527-001 10.0 4.5 3.2 1.6 16.0 7.2 3.5 2.8 1 2 3 4 (5.9) 0.9 0.5 12.5 14.0 2.4 5 1.27 0.7 3.81 2.54 1.27 2.54 2.75 1 : VIN 2 : GND 3 : SWOUT 4 : FB 5 : SS SANYO : TO-220FI5H-HB No. A0985-2/11 TN8D51A Block Diagram VIN 1 3 SWOUT Under Voltage Protect Over Temperature Protect Over Current Protect SENSE Pch MOSFET OUTPUT -COMP + OSC SS 5 SOFTSTART Band Gap + -- AMP 4 FB GND 2 Pin Functions Pin No. Symbol 1 VIN Power Supply Input (Maximum 57V) Function 2 GND GND 3 4 SWOUT FB 5 SS Pulse Voltage Output Feedback from Output Voltage For Soft Start Capacitor Connection and Standby Mode Switching Application Circuit Example 1 VIN SWOUT 3 VOUT VIN 5 SS + FB 4 + 2 GND GND GND No. A0985-3/11 TN8D51A Forward Bias A S O IDP= --48A Drain Current, ID -- A 3 2