TND316S-TL-2H

TND316S-TL-2H

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    -

  • 描述:

  • 数据手册
  • 价格&库存
TND316S-TL-2H 数据手册
Ordering number : ENA0422A TND316S Excellent Power Device http://onsemi.com Inverter and buffer driver for general purpose, Dual SOIC8 Features • Monolithic structure (High voltage CMOS process adopted) Inverter buffer • Wide range of operating voltage : 4.5V to 25V Withstand voltage of 25V is assured • Fast switching time (30ns typical at 1000pF load) Peak output current : 1A Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V) Built-in input pull-down resistance • • • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Supply Voltage Conditions Ratings VDD VIN Input Voltage Allowable Power Dissipation Unit 0 to 25 V GND--0.3 to VDD+0.3 V PD max Tj 0.3 W Junction Temperature --55 to +150 °C Storage Temperature Tstg --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7072-005 • Package : SOIC8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 2,500 pcs./reel TND316S-TL-2H 4.9 0.22 0.375 1 4 0.445 0.254 (GAGE PLANE) 0.175 1.55 1.375 1.27 Packing Type: TL 0.715 5 3.9 6.0 8 1 : NC 2 : IN A 3 : GND 4 : IN B 5 : OUT B 6 : VDD 7 : OUT A 8 : NC Marking TND 316 TL LOT No. Block Diagram VDD SOIC8 IN INVERTING OUT NON-INVERTING GND Semiconductor Components Industries, LLC, 2013 August, 2013 92612 TKIM TC-00002817/D0606IP TIIM TB-00001536 No. A0422-1/8 TND316S Recommend Operating Conditions at Ta=25°C Parameter Symbol Conditions Ratings Unit Operating Supply Voltage VDD 4.5 to 25 V Operating Temperature Topr --40 to +125 °C Electrical Characteristics (AC Characteristics) at Ta=25°C, VDD=18V, VIN=5V Parameter Symbol Turn-On Rise Time Turn-Off Fall Time Delay Time Ratings Conditions min typ Unit max tr tf CL=1000pF CL=1000pF 30 45 ns 30 45 ns tD1 tD2 CL=1000pF 30 45 ns CL=1000pF 45 60 ns Electrical Characteristics (DC Characteristics) at Ta=25°C, VDD=4.5 to 25V Parameter Symbol Logic “1” Input Voltage VIH VIL IIN+ Logic “0” Input Voltage Logic “1” Input Bias Current Logic “0” Input Bias Current typ VIN=VDD=25V IIN-VOH VIN=0V or VDD Low-level Output Voltage VOL IO=0A Unit max Isupp Output High Short Circuit Pulsed Current IO+ IO-- V 40 --1 VDD=10V, VIN=3V, (both inputs) V 100 μA 1 μA V 1.0 VDD=10V, VIN=0V, (both inputs) ROUT 0.8 VDD--0.1 IO=0A VDD Supply Current Output On Resistance min 2.6 High-level Output Voltage Output Low Short Circuit Pulsed Current Ratings Conditions VDD=18V, PW≤10μs, VOUT=0V 1.0 VDD=18V, PW≤10μs, VOUT=18V 1.0 0.1 V 4.5 mA 0.2 mA A A VDD=18V, Iload=10mA, VOUT=“H” 8 12 Ω VDD=18V, Iload=10mA, VOUT=“L” 6 10 Ω Switching Time Test Circuit VDD=18V 4.7μF 0.1μF TND316S INPUT A OUTPUT A 1000pF INPUT B OUTPUT B 1000pF INPUT RISE AND FALL TIMES=5ns INPUT +5V +0.4V 90% 10% tD1 +18V INVERTING OUTPUT tD2 90% 90% 10% 0V 10% tf tr tD1 +18V NONINVERTING OUTPUT 0V tD2 90% 90% 10% 10% tr tf Ordering Information Devices TND316S-TL-2H Package Shipping memo SOIC8 2,500pcs./reel Pb Free and Halogen Free No. A0422-2/8 TND316S tr -- Tc VDD=18V VIN=5V CL=1000pF Turn-On Rise Time, tr -- ns 45 40 35 30 25 VIN=5V CL=1000pF 60 40 30 10 0 50 100 Case Temperature, Tc -- °C 150 0 5 10 40 35 30 25 25 30 IT05649 VIN=5V CL=1000pF Turn-Off Fall Time, tf -- ns VDD=18V VIN=5V CL=1000pF 20 tf -- VDD 60 45 15 Supply Voltage, VDD -- V IT05648 tf -- Tc 50 Turn-Off Fall Time, tf -- ns 50 20 20 15 --50 tr -- VDD 70 Turn-On Rise Time, tr -- ns 50 50 40 30 20 20 15 --50 10 0 50 100 Case Temperature, Tc -- °C 0 35 30 25 20 15 20 25 30 IT05651 tD1 -- VDD 50 VIN=5V CL=1000pF 45 Delay Time, tD1 -- ns 40 10 Supply Voltage, VDD -- V VDD=18V VIN=5V CL=1000pF 45 5 IT05650 tD1 -- Tc 50 Delay Time, tD1 -- ns 150 40 35 30 25 15 10 --50 20 0 50 100 Case Temperature, Tc -- °C 0 70 60 50 40 30 15 20 25 30 IT05653 tD2 -- VDD 160 VIN=5V CL=1000pF 140 Delay Time, tD2 -- ns 80 10 Supply Voltage, VDD -- V VDD=18V VIN=5V CL=1000pF 90 5 IT05652 tD2 -- Tc 100 Delay Time, tD2 -- ns 150 120 100 80 60 40 20 20 10 0 --50 0 0 50 100 Case Temperature, Tc -- °C 150 IT05654 0 5 10 15 20 Supply Voltage, VDD -- V 25 30 IT08459 No. A0422-3/8 TND316S IO(+) -- Tc Output "Low" Short Circuit Pulse Current, IO(--) -- A 1.2 1.0 0.8 0.6 0.4 --50 0 50 100 Output "High / Low" Short Circuit Pulse Current, IO(±) -- A 1.2 1.0 0.8 0.6 0 2.0 1.5 1.0 0.5 100 150 IT05657 PD -- Ta 0.40 VIN=5V CL=10μF 50 Case Temperature, Tc -- °C IT05656 IO(±) -- VDD 2.5 VDD=18V 0.4 --50 150 Case Temperature, Tc -- °C IO(--) -- Tc 1.4 VDD=18V Allowable Power Dissipation, PD -- W Output "High" Short Circuit Pulse Current, IO(+) -- A 1.4 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0 0 5 10 15 20 Supply Voltage, VDD -- V 25 30 IT11084 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03760 No. A0422-4/8 TND316S Taping Specification TND316S-TL-2H  3DFNLQJ )RUPDW &DUULHU 7DSH % 3DFNLQJ PHWKRG FRQWDLQHG SFV 5HHO ,QQHU ER[ 2XWHU ER[    ,QQHU %2; : 2XWHU %2; :  UHHOV FRQWDLQHG  LQQHU ER[HV FRQWDLQHG 'LPHQVLRQV PP H[WHUQDO 'LPHQVLRQV PP H[WHUQDO ™™ ™™ 2XWHU ER[ ODEHO 5HHO ODEHO,QQHU ER[ ODEHO XQLW PP ,W LV D ODEHO DW WKH WLPH RI IDFWRU\ VKLSPHQWV 7KH IRUP RI D ODEHO PD\ FKDQJH LQ SK\VLFDO GLVWULEXWLRQ SURFHVV   7\SH 1R 3 7
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