TS393DR2G

NCV2393, TS393 Micropower Dual CMOS Voltage Comparator The NCV2393 and TS393 are micropower CMOS dual voltage comparators. They feature extremely low consumption of 6 mA typical per comparator and operate over a wide temperature range of TA = −40 to 125°C. The NCV2393 and TS393 are available in an SOIC−8 package. www.onsemi.com MARKING DIAGRAM Features • • • • • • • • • Extremely Low Supply Current: 6 mA Typical Per Channel Wide Supply Range: 2.7 to 16 V Extremely Low Input Bias Current: 1 pA Typical Extremely Low Input Offset Current: 1 pA Typical Input Common Mode Range Includes VSS High Input Impedance: 1012 W Pin−to−Pin Compatibility with Dual Bipolar LM393 NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 8 NCV2393 ALYW G SOIC−8 CASE 751 8 1 1 A L Y W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package PIN CONNECTIONS OUT 1 1 8 VDD IN− 1 2 7 OUT 2 IN+ 1 3 6 IN− 2 VSS 4 5 IN+ 2 ORDERING INFORMATION Package Shipping† NCV2393DR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel TS393DR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 June, 2017 − Rev. 5 1 Publication Order Number: NCV2393/D NCV2393, TS393 PIN DESCRIPTION Pin Name Type 1 OUT 1 Output Description 2 IN− 1 Input Inverting input of comparator 1 3 IN+ 1 Input Non−inverting input of comparator 1 4 VSS Power 5 IN+ 2 Input Non−inverting input of comparator 2 Inverting input of comparator 2 Output of comparator 1. The open−drain output requires an external pull−up resistor. Negative supply 6 IN− 2 Input 7 OUT 2 Output Output of comparator 2. The open−drain output requires an external pull−up resistor. 8 VDD Power Positive supply ABSOLUTE MAXIMUM RATINGS (Note 1) Over operating free−air temperature, unless otherwise stated Parameter Limit Unit 18 V Input Voltage (Note 2) 18 V Input Differential Voltage, VID (Note 3) ±18 V Input Current (through ESD protection diodes) 50 mA Output Voltage 18 V Output Current 20 mA Storage Temperature −65 to +150 °C Junction Temperature 150 °C 1500 V 50 V 100 mA Supply Voltage, VS (VDD−VSS) INPUT AND OUTPUT PINS TEMPERATURE ESD RATINGS Human Body Model Machine Model LATCH−UP RATINGS Latch−up Current Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Stresses beyond the absolute maximum ratings can lead to reduced reliability and damage. 2. Excursions of input voltages may exceed the power supply level. As long as the common mode voltage [VCM = (VIN+ + VIN−)/2] remains within the specified range, the comparator will provide a stable output state. However, the maximum current through the ESD diodes of the input stage must strictly be observed. 3. Input differential voltage is the non−inverting input terminal with respect to the inverting input terminal. To prevent damage to the gates, each comparator includes back−to−back zener didoes between input terminals. When differential voltage exceeds 6.2 V, the diodes turn on. Input resistors of 1 kW have been integrated to limit the current in this event. 4. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (JEDEC standard: JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (JEDEC standard: JESD22−A115) Latch−up Current tested per JEDEC standard: JESD78. THERMAL INFORMATION (Note 5) Thermal Metric Symbol Value Unit Junction−to−Ambient (Note 6) qJA 190 °C/W Junction−to−Case Top YJT 107 °C/W 5. Short−circuits can cause excessive heating and destructive dissipation. Values are typical. 6. Multilayer board, 1 oz. copper, 400 mm2 copper area, both junctions heated equally www.onsemi.com 2 NCV2393, TS393 OPERATING CONDITIONS Symbol Limit Unit Supply Voltage (VDD − VSS) Parameter VS +2.7 to +16 V Operating Free Air Temperature Range TA −40 to +125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. ELECTRICAL CHARACTERISTICS: VS = +3 V (Boldface limits apply over the specified temperature range, TA = –40°C to +125°C, guaranteed by characterization and/or design.) Parameter Symbol Conditions Min VOS VCM = mid−supply Typ Max Unit 1.4 13 mV 14 mV 600 pA INPUT CHARACTERISTICS Offset Voltage Input Bias Current (Note 7) Input Offset Current (Note 7) Input Common Mode Range Common Mode Rejection Ratio IIB IOS VCM = mid−supply 1 VCM = mid−supply pA 1 VCM pA 300 pA VSS VDD – 1.5 V VSS VDD − 2 V CMRR VCM = VSS to VCM = VDD − 1.5 V 70 VOL VID = −1 V, IOL = +6 mA VSS + 300 dB OUTPUT CHARACTERISTICS Output Voltage Low Output Current High IOH VID = +1 V, VOH = +3 V 2 VSS + 450 mV VSS + 700 mV 40 nA 1000 nA DYNAMIC PERFORMANCE Propagation Delay Low to High tPLH Propagation Delay High to Low tPHL VCM = mid−supply, f = 10 kHz, RPU = 5.1 kW, CL = 50 pF 5 mV overdrive 2.1 ms TTL input 0.6 ms VCM = mid−supply, f = 10 kHz, RPU = 5.1 kW, CL = 50 pF 5 mV overdrive 3.9 ms TTL input 0.2 ms POWER SUPPLY Power Supply Rejection Ratio Quiescent Current PSRR VS = +3 V to +5 V 70 IDD Per channel, no load, output = LOW 6 dB 15 mA 20 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Guaranteed by characterization and/or design. www.onsemi.com 3 NCV2393, TS393 ELECTRICAL CHARACTERISTICS: VS = +5 V, unless otherwise noted (Boldface limits apply over the specified temperature range, TA = –40°C to +125°C, guaranteed by characterization and/or design.) Parameter Symbol Conditions Min VOS VCM = mid−supply V, VS = 5 V to 10 V Typ Max Unit 1.4 13 mV 14 mV INPUT CHARACTERISTICS Offset Voltage Input Bias Current (Note 8) IIB VCM = mid−supply 1 Input Offset Current (Note 8) IOS VCM = mid−supply 1 Input Common Mode Range VCM Common Mode Rejection Ratio pA 600 pA pA 300 pA VSS VDD – 1.5 V VSS VDD − 2 V CMRR VCM = VSS to VCM = VDD − 1.5 V 71 VOL VID = −1 V, IOL = +6 mA VSS + 260 dB OUTPUT CHARACTERISTICS Output Voltage Low Output Current High IOH VID = +1 V, VOH = +5 V 2 VSS + 350 mV VSS + 550 mV 40 nA 1000 nA DYNAMIC PERFORMANCE Fall Time tFALL Propagation Delay Low to High tPLH Propagation Delay High to Low tPHL 25 ns 5 mV overdrive 2.1 ms 10 mV overdrive 1.2 ms 20 mV overdrive 0.8 ms 40 mV overdrive 0.5 ms TTL input 0.6 ms 5 mV overdrive 5.8 ms 10 mV overdrive 3.2 ms 20 mV overdrive 1.7 ms 40 mV overdrive 1.0 ms TTL input 0.3 ms dB 50 mV overdrive, f = 10 kHz, RPU = 5.1 kW, CL = 50 pF VCM = mid−supply, f = 10 kHz, RPU = 5.1 kW, CL = 50 pF VCM = mid−supply, f = 10 kHz, RPU = 5.1 kW, CL = 50 pF POWER SUPPLY Power Supply Rejection Ratio Quiescent Current PSRR VS = +5 V to = +10 V 80 IDD Per channel, no load, output = LOW 6 15 mA 20 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Guaranteed by characterization and/or design www.onsemi.com 4 600 500 CURRENT (pA) VS = 5 V VCM = mid−rail IIB+ IIB− IOS 400 300 200 100 0 25 45 85 65 TEMPERATURE (°C) 105 125 VOL, LOW LEVEL OUTPUT VOLTAGE (V) NCV2393, TS393 1.25 VS = 3 V VS = 4 V VS = 5 V VS = 10 V VS = 16 V 1 0.75 0.5 0.25 0 0 4 8 12 16 IOL, LOW−LEVEL OUTPUT CURRENT (mA) 450 400 Figure 2. VOL vs. IOL 25 VS = 5 V IOL = 6 mA IDD, SUPPLY CURRENT (mA) VOL, LOW LEVEL OUTPUT VOLTAGE (mV) Figure 1. IIB and IOS vs. Temperature 350 300 250 150 100 50 0 −55 −40 25 70 85 TA, FREE−AIR TEMPERATURE (°C) 20 15 5 0 125 Output Low No Loads Total IDD of both channels 0 2 4 6 8 10 12 VS, SUPPLY VOLTAGE (V) Outputs High PROPAGATION DELAY (nS) IDD, SUPPLY CURRENT (mA) 900 12 10 Outputs Low 8 6 4 2 0 −55 VS = 5 V No Loads Total IDD of Both Channels −40 25 70 85 14 16 Figure 4. IDD vs. VS 18 14 TA = −55°C TA = −40°C TA = 25°C TA = 70°C TA = 85°C TA = 125°C 10 Figure 3. VOL vs. Temperature 16 20 800 700 600 tPLH 500 400 300 3 125 tPHL Overdrive = 50 mV RP = 5.1 kW CL = 50 pF TA = 25°C 6 9 12 15 18 21 24 27 30 VOH, HIGH LEVEL OUTPUT VOLTAGE (V) VS, SUPPLY VOLTAGE (V) Figure 5. IDD vs. Temperature Figure 6. Propagation Delay vs. VS www.onsemi.com 5 33 36 NCV2393, TS393 5 VS = 5 V 0.35 RP = 5.1 kW CL = 50 pF 0.3 T = 25°C A 0.25 0.2 0.15 0.1 4 OUTPUT 3 2 40 mV 20 mV 1 2 mV 5 mV 0 −1 10 mV −2 −3 0.05 −4 0 OUTPUT AMPLITUDE (V) INPUT AMPLITUDE (V) 0.4 −5 −0.05 INPUT 0 −1 1 2 3 4 5 −6 PROPAGATION DELAY (ms) Figure 7. tPLH vs. Overdrive OUTPUT 0.3 0.25 20 mV 0.2 0.05 0 −1 −2 2 mV 0.1 70 1 10 mV 0.15 3 2 VS = 5 V RP = 5.1 kW CL = 50 pF TA = 25°C 5 mV 40 mV 80 OUTPUT AMPLITUDE (V) INPUT AMPLITUDE (V) 0.35 4 −3 INPUT −4 0 −0.05 −3 −5 0 3 6 9 12 50 mV Overdrive RP = 5.1k to VDD TA = 25°C 60 50 CL = 50 pF 40 30 CL = 15 pF 20 10 0 −6 15 3 6 9 12 PROPAGATION DELAY (ms) 0.6 0.8 0.2 0 −0.2 −0.4 −0.6 −1 −1.5 VDD = 1.5 V VSS = −1.5 V −1.0 0.6 24 27 30 33 36 0 0.5 TA = −55°C TA = −40°C TA = 25°C TA = 70°C TA = 85°C TA = 125°C 0.4 0.2 0 −0.2 −0.4 −0.6 −0.8 −0.5 21 1 TA = 70°C TA = 85°C TA = 125°C 0.4 −0.8 18 Figure 9. Fall Time vs. VS OFFSET VOLTAGE (mV) OFFSET VOLTAGE (mV) 0.8 TA = −55°C TA = −40°C TA = 25°C 15 VS, SUPPLY VOLTAGE (V) Figure 8. tPHL vs. Overdrive 1 CL = 100 pF tFall, FALL TIME (ns) 0.4 −1 −2.5 VDD = 2.5 V VSS = −2.5 V −2.0 −1.5 −1.0 −0.5 0 0.5 INPUT COMMON MODE VOLTAGE (V) INPUT COMMON MODE VOLTAGE (V) Figure 10. VOS vs. VCM (VS = 3 V) Figure 11. VOS vs. VCM (VS = 5 V) www.onsemi.com 6 1.0 1.5 1 20 0.8 18 PERCENTAGE OF UNITS (%) OFFSET VOLTAGE (mV) NCV2393, TS393 0.6 0.4 0.2 0 −0.2 −0.4 −0.6 −0.8 −1 −1.5 VDD = 5 V VSS = −5 V TA = −55°C TA = −40°C TA = 25°C −1.0 TA = 70°C TA = 85°C TA = 125°C −0.5 0 16 14 12 10 8 6 4 2 0 0.5 n = 71545 TA = 25°C VS = 3 V VCM = mid−supply −14 −12 −10 −8 −6 −4 −2 0 2 4 6 8 10 12 14 INPUT COMMON MODE VOLTAGE (V) OFFSET VOLTAGE (mV) Figure 12. VOS vs. VCM (VS = 10 V) Figure 13. Offset Voltage Distribution www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative