UESD5.0DT5G

mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT−723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power supplies and many other portable applications. Specification Features: http://onsemi.com 1 3 2 • Small Body Outline Dimensions: • • • • • • • • PIN 1. CATHODE 2. CATHODE 3. ANODE 0.047″ x 0.032″ (1.20 mm x 0.80 mm) Low Body Height: 0.020″ (0.5 mm) Stand−off Voltage: 3.3 V − 6.0 V Low Leakage Response Time is Typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model IEC61000−4−2 Level 4 ESD Protection IEC61000−4−4 Level 4 EFT Protection These are Pb−Free Devices 3 1 2 MARKING DIAGRAM xx M SOT−723 CASE 631AA STYLE 4 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic xx M = Device Code = Date Code Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C ORDERING INFORMATION Device mESDxxDT5G Package SOT−723 Shipping† 8000/Tape & Reel Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating IEC 61000−4−2 (ESD) IEC 61000−4−4 (EFT) ESD Voltage Per Human Body Model Per Machine Model ⎪ PD RqJA TJ, Tstg TL Air Contact Symbol Value ±30 ±30 40 16 400 240 1.9 525 −55 to +150 260 Unit kV A kV V mW mW/°C °C/W °C °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature Range Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. © Semiconductor Components Industries, LLC, 2006 1 October, 2006 − Rev. 1 Publication Order Number: mESD3.3DT5G/D mESD3.3DT5G SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT IF VF Ppk C Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF Peak Power Dissipation Max. Capacitance @VR = 0 and f = 1 MHz IPP VC VBR VRWM IR VF IT V IF I Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types) VRWM (V) Max 3.3 5.0 6.0 IR (mA) @ VRWM Max 1.0 0.1 0.1 VBR (V) @ IT (Note 2) Min 5.0 6.2 7.0 IT mA 1.0 1.0 1.0 C (pF) Typ 47 38 34 Device* mESD3.3DT5G mESD5.0DT5G mESD6.0DT5G Device Marking L0 L2 L3 *Other voltages available upon request. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. http://onsemi.com 2 mESD3.3DT5G SERIES TYPICAL CHARACTERISTICS BREAKDOWN VOLTAGE (VOLTS) (VZ @ IZ) 7.4 7.3 7.2 7.1 7.0 6.9 6.8 6.7 6.6 6.5 6.4 6.3 −55 + 25 TEMPERATURE (°C) + 150 mESDxxDT5G IR (nA) 20 18 16 14 12 10 8 6 4 2 0 −55 + 25 TEMPERATURE (°C) + 150 mESDxxDT5G Figure 1. Typical Breakdown Voltage versus Temperature 45 40 CAPACITANCE (pF) 35 30 25 20 15 10 5 0 0 1 2 3 4 5 mESDxxDT5G PD, POWER DISSIPATION (mW) 300 250 200 150 100 Figure 2. Typical Leakage Current versus Temperature FR−5 BOARD 50 0 0 25 50 75 100 125 TEMPERATURE (°C) 150 175 BIAS VOLTAGE (V) Figure 3. Typical Capacitance versus Bias Voltage Figure 4. Steady State Power Derating Curve Figure 5. Positive 8 kV contact per IEC 6100−4−2 − mESD5.0DT5G Figure 6. Negative 8 kV contact per IEC 61000−4−2 − mESD5.0DT5G http://onsemi.com 3 mESD3.3DT5G SERIES PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE A −X− D b1 −Y− 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.20 0.27 0.25 0.3 0.35 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 A E 1 2 L C HE e b 2X 0.08 (0.0032) X Y DIM A b b1 C D E e HE L STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE SOLDER FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches SOT−723 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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