UMC3NT2G

UMC2NT1G, UMC3NT1G, UMC5NT1G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1G series, two complementary BRT devices are housed in the SOT−353 package which is ideal for low power surface mount applications where board space is at a premium. Features 3 http://onsemi.com 2 R1 R2 1 R2 Q1 4 R1 Q2 5 • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM 5 SC−88A/SOT−353 CASE 419A STYLE 6 1 4 Ux M G G 2 3 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc Ux = Device Marking x = 2, 3 or 5 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. THERMAL CHARACTERISTICS Thermal Resistance − Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25°C (Note 1) RqJA TJ, Tstg PD 833 − 65 to +150 *150 °C/W °C mW 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 8 1 Publication Order Number: UMC2NT1/D UMC2NT1G, UMC3NT1G, UMC5NT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0, IC = 0 mA) UMC2NT1G UMC3NT1G UMC5NT1G / T2G ICBO ICEO IEBO − − − − − − − − − − 100 500 0.2 0.5 1.0 nAdc nAdc mAdc ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) UMC2NT1G UMC3NT1G UMC5NT1G / T2G V(BR)CBO V(BR)CEO hFE 50 50 60 35 20 − − 4.9 15.4 7.0 3.3 0.8 0.8 0.38 − − 100 60 35 − − − 22 10 4.7 1.0 1.0 0.47 − − − − − 0.25 0.2 − 28.6 13 6.1 1.2 1.2 0.56 Vdc Vdc Vdc kW Vdc Vdc Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor UMC2NT1G UMC3NT1G UMC5NT1G / T2G UMC2NT1G UMC3NT1G UMC5NT1G / T2G VCE(SAT) VOL VOH R1 Resistor Ratio R1/R2 Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0, IC = 0 mA) UMC2NT1G UMC3NT1G UMC5NT1G / T2G ICBO ICEO IEBO − − − − − − − − − − 100 500 0.2 0.5 0.1 nAdc nAdc mAdc ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) UMC2NT1G UMC3NT1G UMC5NT1G / T2G V(BR)CBO V(BR)CEO hFE 50 50 60 35 80 − − 4.9 15.4 7.0 33 0.8 0.8 0.8 − − 100 60 140 − − − 22 10 47 1.0 1.0 1.0 − − − − − 0.25 0.2 − 28.6 13 61 1.2 1.2 1.2 Vdc Vdc Vdc kW Vdc Vdc Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor UMC2NT1G UMC3NT1G UMC5NT1G / T2G UMC2NT1G UMC3NT1G UMC5NT1G / T2G VCE(SAT) VOL VOH R1 Resistor Ratio R1/R2 http://onsemi.com 2 UMC2NT1G, UMC3NT1G, UMC5NT1G ORDERING INFORMATION Device UMC2NT1G UMC3NT1G UMC3NT2G UMC5NT1G UMC5NT2G Package SC−88A/SOT−353 (Pb−Free) SC−88A/SOT−353 (Pb−Free) SC−88A/SOT−353 (Pb−Free) SC−88A/SOT−353 (Pb−Free) SC−88A/SOT−353 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING AND RESISTOR VALUES Transistor 1 − PNP Device UMC2NT1G UMC3NT1G UMC3NT2G UMC5NT1G UMC5NT2G Marking U2 U3 U3 U5 U5 R1 (K) 22 10 10 4.7 4.7 R2 (K) 22 10 10 10 10 Transistor 2 − NPN R1 (K) 22 10 10 47 47 R2 (K) 22 10 10 47 47 250 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 RqJA = 833°C/W 50 0 - 50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve http://onsemi.com 3 UMC2NT1G, UMC3NT1G, UMC5NT1G TYPICAL ELECTRICAL CHARACTERISTICS — UMC2NT1G PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 h FE , DC CURRENT GAIN 1000 VCE = 10 V 1 TA = -25°C 25°C TA = 75°C 100 25°C -25°C 75°C 0.1 0.01 10 0 20 IC, COLLECTOR CURRENT (mA) 40 50 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz lE = 0 mA TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 25°C TA = -25°C C ob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0.001 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (V) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) 50 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 10 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 4 UMC2NT1G, UMC3NT1G, UMC5NT1G TYPICAL ELECTRICAL CHARACTERISTICS — UMC2NT1G NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25°C h FE , DC CURRENT GAIN 25°C 0.1 75°C 1000 VCE = 10 V TA = 75°C 25°C -25°C 100 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz IE = 0 mA TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 25°C TA = -25°C C ob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 VO = 5 V 0 1 2 3 5 6 7 4 Vin, INPUT VOLTAGE (V) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) 50 0.001 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 5 UMC2NT1G, UMC3NT1G, UMC5NT1G TYPICAL ELECTRICAL CHARACTERISTICS — UMC3NT1G PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN 1000 VCE = 10 V TA = -25°C 0.1 75°C 25°C TA = 75°C 25°C 100 -25°C 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 4 f = 1 MHz lE = 0 mA TA = 25°C 100 75°C 25°C TA = -25°C Cob , CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 0.001 0 1 2 VO = 5 V 6 7 3 4 5 Vin, INPUT VOLTAGE (V) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) 50 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = -25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 6 UMC2NT1G, UMC3NT1G, UMC5NT1G TYPICAL ELECTRICAL CHARACTERISTICS — UMC3NT1G NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 h FE , DC CURRENT GAIN 25°C 75°C 1000 VCE = 10 V TA = 75°C 25°C -25°C 100 0.1 TA = -25°C 0.01 0.001 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 f = 1 MHz IE = 0 mA TA = 25°C 100 IC, COLLECTOR CURRENT (mA) 75°C 25°C TA = -25°C 3 C ob , CAPACITANCE (pF) 10 1 2 0.1 1 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (V) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current http://onsemi.com 7 UMC2NT1G, UMC3NT1G, UMC5NT1G TYPICAL ELECTRICAL CHARACTERISTICS — UMC5NT1G PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN 100 1000 VCE = 10 V TA = 75°C -25°C 25°C TA = 75°C 0.1 -25°C 25°C 10 0.01 1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 60 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 12 10 C ob , CAPACITANCE (pF) 8 6 4 SERIES 1 2 0 f = 1 MHz IE = 0 mA TA = 25°C 100 IC, COLLECTOR CURRENT (mA) 75°C 10 1 VO = 5 V 0.1 TA = -25°C 25°C 0 2 4 6 8 Vin, INPUT VOLTAGE (V) 10 12 0.01 0 5 10 20 30 15 25 35 VR, REVERSE BIAS VOLTAGE (V) 40 45 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage http://onsemi.com 8 UMC2NT1G, UMC3NT1G, UMC5NT1G TYPICAL ELECTRICAL CHARACTERISTICS — UMC5NT1G NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 h FE , DC CURRENT GAIN 1000 VCE = 10 V TA = 75°C 25°C -25°C 100 1 TA = -25°C 0.1 25°C 75°C 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 26. VCE(sat) versus IC Figure 27. DC Current Gain 1 f = 1 MHz IE = 0 mA TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 25°C TA = -25°C 0.8 C ob , CAPACITANCE (pF) 0.6 1 0.4 0.1 0.2 0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (V) 8 10 0 0 10 20 30 VR, REVERSE BIAS VOLTAGE (V) 40 50 0.001 Figure 28. Output Capacitance Figure 29. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 30. Input Voltage versus Output Current http://onsemi.com 9 UMC2NT1G, UMC3NT1G, UMC5NT1G PACKAGE DIMENSIONS SC−88A, SOT−353, SC−70 CASE 419A−02 ISSUE J A G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5 4 S 1 2 3 −B− DIM A B C D G H J K N S D 5 PL 0.2 (0.008) M B M N J C INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 STYLE 6: PIN 1. EMITTER 2 2. BASE 2 3. EMITTER 1 4. COLLECTOR 5. COLLECTOR 2/BASE 1 H 0.50 0.0197 K SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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