USB10H

USB10H Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. • These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. -1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V • Low gate charge (3 nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON). • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications • Load switch • Battery protection • Power management D2 S1 D1 4 3 5 2 6 1 G2 SuperSOT TM -6 S2 G1 Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V ID Drain Current (Note 1a) -1.9 -5 A PD Power Dissipation for Single Operation (Note 1a) 0.96 W (Note 1b) 0.9 - Continuous - Pulsed (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range 0.7 -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 130 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W Package Outlines and Ordering Information Device Marking .306 1999 Fairchild Semiconductor Corporation Device Reel Size Tape Width Quantity USB10H 7’’ 8mm 3000 units USB10H Rev. C USB10H February 1999 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C -20 Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA -1.5 V On Characteristics V mV/°C -18 -1 (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 µA, Referenced to 25°C 3 0.127 0.182 0.194 ID(on) On-State Drain Current VGS = -4.5 V, ID = -1.9 A VGS = -4.5 V, ID = -1.9 A @125°C VGS = -2.5 V, ID = -1.7 A VGS = -4.5 V, VDS =- 5 V gFS Forward Transconductance VDS = -5 V, ID = -1.9 A 4 VDS = -10 V, VGS = 0 V, f = 1.0 MHz 441 pF 127 pF 67 pF -0.4 -0.9 mV/°C 0.170 0.270 0.250 -5 Ω A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω VDS = -10 V, ID = -1.9 A, VGS = -4.5 V 6 12 ns 9 18 ns 14 25 ns 3 9 ns 3 4.2 nC 0.7 nC 0.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.8 A (Note 2) -0.8 -0.8 A -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.Both devices are assumed to be operating and sharing the dissipated heat energy equally. a) 130 °C/W when mounted on a 0.125 in2 pad of 2 oz. copper. b) 140 °C/W when mounted on a 0.005 in2 pad of 2 oz. copper. c) 180 °C/W when mounted on a 0.0015 in2 pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% USB10H Rev. C USB10H Electrical Characteristics USB10H Typical Characteristics 2 V GS= -4.5V -4.0V 10 8 R D S(on), NORMALI ZED -3.5V -3.0V 6 -2.5V 4 -2.0V 2 DRAIN-SOURCE O N-RESI STANCE - ID , DRAIN-SOURCE CURRENT (A) 12 1.8 VGS = -2 .5 V 1.6 1.4 -3.0V -3.5V 1.2 -4.0V -4.5V 1 0.8 0 0 0 1 2 3 4 2 4 5 Figure 1. On-Region Characteristics. 10 0.5 R D S(ON) , ON-RESISTANCE (OHM) I D = -1.9A V GS= -4.5V 1.4 1.2 1 0.8 0.6 -50 ID = -1A 0.4 0.3 0.2 TJ = 1 25° C 0.1 25° C 0 -25 0 25 50 75 100 125 150 1 2 3 4 5 -VGS , GATE TO SOURCE VOLT AG E (V) TJ , JUNCTION T EM PERAT URE (°C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 VDS = -5V -I S , REVERSE DRAIN CURRENT (A) R D S(ON), NORMALIZED DRAIN-SOURCE O N-RESISTANCE 8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 - ID , DRAIN CURRENT (A) 6 - I D , DRAIN CURRENT (A) -V DS , DRAIN-SOURCE VOLTAG E (V) TJ = -55°C 25°C 1 25°C 8 6 4 2 0 0 1 2 3 4 -VGS , GATE T O SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 VGS = 0V 1 TJ = 125°C 25 °C 0.1 -55°C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLT AGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. USB10H Rev. C (continued) 1000 5 I D = -1.9A VDS = -5V 4 -10V CAPACI TANCE (pF) -VGS , GATE-SOURCE VOLT AGE (V) USB10H Typical Characteristics -15V 3 2 Ciss 300 Coss 100 1 0 0 1 2 3 30 0.1 4 0.2 Q g , GAT E CHARGE (nC) T IMI 1 10 1s DC 0.3 V GS = -4.5V SINGLE PULSE R θJA = 180°C/W T A = 25°C 0.2 us 5 10 20 0m s 3 2 1 0.5 1 2 5 10 -V DS , DRAIN-SOURCE VOLTAGE (V) 20 0 0.01 50 r(t), NORMALIZED EFFECTIVE Figure 9. Maximum Safe Operating Area. TRANSIENT THERMAL RESISTANCE SINGLE PULSE R θJA=180°C/W TA = 25°C 4 1m s 10m s POWER (W) L N) S(O RD 3 0.01 0.1 2 5 100 10 0.03 1 Figure 8. Capacitance Characteristics. 30 0.1 0.5 -VDS , DRAIN T O SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. -ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 0.1 1 10 SINGLE PULSE TIME (SEC) 100 300 Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 D = 0.5 0.2 0.2 0.1 R θJA (t) = r(t) * R θJA R θJA =180°C/W 0.1 P(pk) 0.05 t1 0.05 0.02 0.01 0.02 0.01 0.0001 t2 TJ - T A = P * R JA (t) θ Duty Cycle, D = t 1 / t 2 Single Pulse 0.001 0.01 0.1 1 10 100 300 t 1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. USB10H Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D