VEC2616
Power MOSFET
60V, 80mΩ, 3A, –60V, 137mΩ, –2.5A,
Complementary
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This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
• Low On-Resistance
• 4V drive
• Low-Profile Package
• Complementary N-Channel and P-Channel MOSFET
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
VDSS
N-Ch
60V
ELECTRICAL CONNECTION
N-Channel and P-Channel
Symbol
8
N-Channel
P-Channel
−60
Gate to Source Voltage
VGSS
ID
±20
±20
V
3
−2.5
A
12
−10
A
IDP
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Unit
60
Junction Temperature
−2.5A
194mΩ@ −4V
VDSS
Power Dissipation
When mounted on ceramic substrate
2
(900mm × 0.8mm) 1unit
Total Dissipation
When mounted on ceramic substrate
2
(900mm × 0.8mm)
3A
180mΩ@ −4.5V
−60V
Drain to Source Voltage
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
106mΩ@ 4.5V
137mΩ@ −10V
P-Ch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Drain Current (DC)
ID Max
116mΩ@ 4V
Typical Applications
• Motor Driver
Parameter
RDS(on) Max
80mΩ@ 10V
V
PD
0.9
W
PT
1.0
W
Tj
150
°C
1
2
3
PACKING TYPE : TL
4
MARKING
UP
LOT No.
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 7 of this data sheet.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
2
(900mm × 0.8mm) 1unit
Symbol
RθJA
© Semiconductor Components Industries, LLC, 2015
October 2015 - Rev. 1
Value
138.8
1
Unit
°C/W
Publication Order Number :
VEC2616/D
VEC2616
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Conditions
Value
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
ID=1mA, VGS=0V
VDS=60V, VGS=0V
Gate to Source Leakage Current
IGSS
VGS=±16V, VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
Forward Transconductance
gFS
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
2.6
min
typ
max
Unit
[N-Channel]
Static Drain to Source On-State
Resistance
RDS(on)1
RDS(on)2
60
V
1
μA
±10
μA
2.6
V
62
80
mΩ
1.2
S
ID=0.75A, VGS=4.5V
76
106
mΩ
ID=0.75A, VGS=4V
83
116
mΩ
Input Capacitance
RDS(on)3
Ciss
Output Capacitance
Coss
VDS=20V, f=1MHz
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
7.3
ns
Rise Time
tr
7.5
ns
Turn-OFF Delay Time
td(off)
41
ns
Fall Time
tf
Qg
Total Gate Charge
505
See specified Test Circuit
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
IS=3A, VGS=0V
Drain to Source Breakdown Voltage
V(BR)DSS
IDSS
Gate to Source Leakage Current
IGSS
VGS(th)
gFS
ID=−1mA, VGS=0V
VDS=−60V, VGS=0V
VGS=±16V, VDS=0V
−60
Zero-Gate Voltage Drain Current
VDS=−10V, ID=−1mA
−1.2
VDS=30V, VGS=10V, ID=3A
pF
57
pF
37
pF
22
ns
10
nC
1.6
nC
2.1
nC
0.81
1.2
V
−1
μA
[P-Channel]
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
RDS(on)1
RDS(on)2
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
V
±10
μA
−2.6
V
VDS=−10V, ID=−1.5A
ID=−1.5A, VGS=−10V
105
137
mΩ
ID=−0.75A, VGS=−4.5V
128
180
mΩ
ID=−0.75A, VGS=−4V
138
194
mΩ
VDS=−20V, f=1MHz
3.9
S
420
pF
54
pF
pF
Reverse Transfer Capacitance
Crss
44
Turn-ON Delay Time
6.4
ns
Rise Time
td(on)
tr
9.8
ns
Turn-OFF Delay Time
td(off)
65
ns
Fall Time
tf
36
ns
Total Gate Charge
Qg
11
nC
Gate to Source Charge
Qgs
1.4
nC
Gate to Drain “Miller” Charge
Qgd
See specified Test Circuit
VDS=−30V, VGS=−10V, ID=−2.5A
2
nC
VSD
Forward Diode Voltage
IS=−2.5A, VGS=0V
−0.83
−1.2
V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
VEC2616
Switching Time Test Circuit
[N-Channel]
10V
0V
[P-Channel]
VDD=30V
VIN
0V
--10V
ID=1.5A
RL=20Ω
VIN
D
PW=10μs
D.C.≤1%
50Ω
ID= --1.5A
RL=20Ω
VIN
VOUT
D
PW=10μs
D.C.≤1%
VOUT
G
G
P.G
VDD= --30V
VIN
VEC2616
S
P.G
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3
50Ω
VEC2616
S
VEC2616
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4
VEC2616
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5
VEC2616
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6
VEC2616
PACKAGE DIMENSIONS
unit : mm
SOT-28FL / VEC8
CASE 318AH
ISSUE O
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Recommended
Soldering Footprint
2.8
0.6
0.4
0.65
ORDERING INFORMATION
Device
Marking
Package
Shipping (Qty / Packing)
UP
SOT-28FL / VEC8
(Pb-Free / Halogen Free)
3,000 / Tape & Reel
VEC2616-TL-H
VEC2616-TL-W
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the VEC2616 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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