VEC2616-TL-W

VEC2616 Power MOSFET 60V, 80mΩ, 3A, –60V, 137mΩ, –2.5A, Complementary www.onsemi.com This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V drive • Low-Profile Package • Complementary N-Channel and P-Channel MOSFET • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance VDSS N-Ch 60V ELECTRICAL CONNECTION N-Channel and P-Channel Symbol 8 N-Channel P-Channel −60 Gate to Source Voltage VGSS ID ±20 ±20 V 3 −2.5 A 12 −10 A IDP 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Unit 60 Junction Temperature −2.5A 194mΩ@ −4V VDSS Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) 1unit Total Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) 3A 180mΩ@ −4.5V −60V Drain to Source Voltage Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% 106mΩ@ 4.5V 137mΩ@ −10V P-Ch SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Drain Current (DC) ID Max 116mΩ@ 4V Typical Applications • Motor Driver Parameter RDS(on) Max 80mΩ@ 10V V PD 0.9 W PT 1.0 W Tj 150 °C 1 2 3 PACKING TYPE : TL 4 MARKING UP LOT No. Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TL ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) 1unit Symbol RθJA © Semiconductor Components Industries, LLC, 2015 October 2015 - Rev. 1 Value 138.8 1 Unit °C/W Publication Order Number : VEC2616/D VEC2616 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Conditions Value Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=60V, VGS=0V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA Forward Transconductance gFS VDS=10V, ID=1.5A ID=1.5A, VGS=10V 2.6 min typ max Unit [N-Channel] Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 60 V 1 μA ±10 μA 2.6 V 62 80 mΩ 1.2 S ID=0.75A, VGS=4.5V 76 106 mΩ ID=0.75A, VGS=4V 83 116 mΩ Input Capacitance RDS(on)3 Ciss Output Capacitance Coss VDS=20V, f=1MHz Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) 7.3 ns Rise Time tr 7.5 ns Turn-OFF Delay Time td(off) 41 ns Fall Time tf Qg Total Gate Charge 505 See specified Test Circuit Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD IS=3A, VGS=0V Drain to Source Breakdown Voltage V(BR)DSS IDSS Gate to Source Leakage Current IGSS VGS(th) gFS ID=−1mA, VGS=0V VDS=−60V, VGS=0V VGS=±16V, VDS=0V −60 Zero-Gate Voltage Drain Current VDS=−10V, ID=−1mA −1.2 VDS=30V, VGS=10V, ID=3A pF 57 pF 37 pF 22 ns 10 nC 1.6 nC 2.1 nC 0.81 1.2 V −1 μA [P-Channel] Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Ciss Output Capacitance Coss V ±10 μA −2.6 V VDS=−10V, ID=−1.5A ID=−1.5A, VGS=−10V 105 137 mΩ ID=−0.75A, VGS=−4.5V 128 180 mΩ ID=−0.75A, VGS=−4V 138 194 mΩ VDS=−20V, f=1MHz 3.9 S 420 pF 54 pF pF Reverse Transfer Capacitance Crss 44 Turn-ON Delay Time 6.4 ns Rise Time td(on) tr 9.8 ns Turn-OFF Delay Time td(off) 65 ns Fall Time tf 36 ns Total Gate Charge Qg 11 nC Gate to Source Charge Qgs 1.4 nC Gate to Drain “Miller” Charge Qgd See specified Test Circuit VDS=−30V, VGS=−10V, ID=−2.5A 2 nC VSD Forward Diode Voltage IS=−2.5A, VGS=0V −0.83 −1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 VEC2616 Switching Time Test Circuit [N-Channel] 10V 0V [P-Channel] VDD=30V VIN 0V --10V ID=1.5A RL=20Ω VIN D PW=10μs D.C.≤1% 50Ω ID= --1.5A RL=20Ω VIN VOUT D PW=10μs D.C.≤1% VOUT G G P.G VDD= --30V VIN VEC2616 S P.G www.onsemi.com 3 50Ω VEC2616 S VEC2616 www.onsemi.com 4 VEC2616 www.onsemi.com 5 VEC2616 www.onsemi.com 6 VEC2616 PACKAGE DIMENSIONS unit : mm SOT-28FL / VEC8 CASE 318AH ISSUE O 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Recommended Soldering Footprint 2.8 0.6 0.4 0.65 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) UP SOT-28FL / VEC8 (Pb-Free / Halogen Free) 3,000 / Tape & Reel VEC2616-TL-H VEC2616-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the VEC2616 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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