VN2222LLG

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Other names and brands may be claimed as the property of others. VN2222LLG Small Signal MOSFET 150 mAmps, 60 Volts N−Channel TO−92 http://onsemi.com Features • This is a Pb−Free Device* 150 mA, 60 V RDS(on) = 7.5 W MAXIMUM RATINGS Rating N−Channel Symbol Value Unit Drain −Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) VGS VGSM ± 20 ± 40 Vdc Vpk ID 150 1000 PD 400 3.2 mW mW/°C TJ, Tstg −55 to +150 °C Drain Current − Continuous − Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range G S mAdc IDM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 312.5 °C/W TL 300 °C Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds D TO−92 CASE 29 STYLE 22 12 3 MARKING DIAGRAM & PIN ASSIGNMENT VN22 22LL AYWW G G 1 Source 2 Gate 3 Drain A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 April, 2011 − Rev. 4 1 Publication Order Number: VN2222LL/D VN2222LLG ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 60 − Vdc − − 10 500 OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mAdc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) IDSS Gate−Body Leakage Current, Forward (VGSF = 30 Vdc, VDS = 0) IGSSF − −100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.6 2.5 Vdc Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125°C) rDS(on) − − 7.5 13.5 Drain−Source On−Voltage (VGS = 5.0 Vdc, ID = 200 mAdc) (VGS = 10 Vdc, ID = 500 mAdc) VDS(on) − − ID(on) 750 − mA gfs 100 − mmhos Ciss − 60 pF Coss − 25 Crss − 5.0 ton − 10 toff − 10 mAdc ON CHARACTERISTICS (Note 1) On−State Drain Current (VGS = 10 Vdc, VDS ≥ 2.0 VDS(on)) Forward Transconductance (VDS = 10 Vdc, ID = 500 mAdc) W Vdc 1.5 3.75 DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 1) Turn−On Delay Time Turn−Off Delay Time (VDD = 15 Vdc, ID = 600 mA, Rgen = 25 W, RL = 23 W) ns 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device VN2222LLG Package Shipping† TO−92 (Pb−Free) 1000 Unit / Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 VN2222LLG 1 2 I D, DRAIN CURRENT (AMPS) 1.8 1.6 I D, DRAIN CURRENT (AMPS) TA = 25°C VGS = 10 V 1.4 9V 1.2 8V 1 7V 0.8 0.6 6V 0.4 5V 0.2 4V 25°C VDS = 10 V 0.8 -55°C 125°C 0.6 0.4 0.2 3V 1 2 3 4 5 6 7 8 9 0 10 4 5 6 7 8 Figure 2. Transfer Characteristics VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1 0.8 0.6 0.4 -60 3 Figure 1. Ohmic Region 2.2 1.8 2 VGS, GATE-SOURCE VOLTAGE (VOLTS) 2.4 2 1 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) -20 +20 +60 T, TEMPERATURE (°C) +140 +100 VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0 10 1.2 1.15 VDS = VGS ID = 1 mA 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 0.7 -60 Figure 3. Temperature versus Static Drain−Source On−Resistance -20 0 +20 +60 T, TEMPERATURE (°C) +100 Figure 4. Temperature versus Gate Threshold Voltage http://onsemi.com 3 9 +140 VN2222LLG PACKAGE DIMENSIONS TO−92 CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative VN2222LL/D