VN2222LLRLRA

VN2222LL Preferred Device Small Signal MOSFET 150 mAmps, 60 Volts N−Channel TO−92 http://onsemi.com Features • Pb−Free Packages are Available* 150 mA, 60 V RDS(on) = 7.5
MAXIMUM RATINGS Rating N−Channel Symbol Value Unit Drain −Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 M
) VDGR 60 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 s) VGS VGSM ± 20 ± 40 Vdc Vpk ID 150 1000 Drain Current − Continuous − Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range G S mAdc IDM PD 400 3.2 mW mW/°C TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. TO−92 CASE 29 STYLE 22 12 3 MARKING DIAGRAM & PIN ASSIGNMENT THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RJA 312.5 °C/W TL 300 °C Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds D VN22 22LL AYWW 1 Source A Y WW 2 Gate 3 Drain = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2004 September, 2004 − Rev. 3 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: VN2222LL/D VN2222LL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 60 − Vdc − − 10 500 OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 100 Adc) Adc Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) IDSS Gate−Body Leakage Current, Forward (VGSF = 30 Vdc, VDS = 0) IGSSF − −100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.6 2.5 Vdc Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125°C) rDS(on) − − 7.5 13.5 Drain−Source On−Voltage (VGS = 5.0 Vdc, ID = 200 mAdc) (VGS = 10 Vdc, ID = 500 mAdc) VDS(on) ON CHARACTERISTICS (Note 1) On−State Drain Current (VGS = 10 Vdc, VDS ≥ 2.0 VDS(on)) Forward Transconductance (VDS = 10 Vdc, ID = 500 mAdc)
− − Vdc 1.5 3.75 ID(on) 750 − mA gfs 100 − mhos Ciss − 60 pF Coss − 25 Crss − 5.0 ton − 10 toff − 10 DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, Vd VGS = 0 0, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 1) Turn−On Delay Time Turn−Off Delay Time (VDD = 15 Vdc, ID = 600 mA, Rgen = 25
, RL = 23
) ns 1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%. ORDERING INFORMATION Package Shipping† TO−92 1000 Unit / Box VN2222LLG TO−92 (Pb−Free) 1000 Unit / Box VN2222LLRL TO−92 1000 Unit / Box VN2222LLRLRA TO−92 2000 Tape & Reel TO−92 (Pb−Free) 2000 Tape & Reel TO−92 2000 Unit / Ammo Box Device VN2222LL VN2222LLRLRAG VN2222LLRLRM †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 VN2222LL 1 2 VGS = 10 V 1.4 9V 1.2 8V 1 7V 0.8 0.6 6V 0.4 5V 4V 0.2 r DS(on) , STATIC DRAIN−SOURCE ON−RESISTANCE (NORMALIZED) 25°C VDS = 10 V 0.8 −
55 °C 125°C 0.6 0.4 0.2 3V 0 1 2 3 4 5 6 7 8 9 0 10 4 5 6 7 8 Figure 2. Transfer Characteristics VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1 0.8 0.6 0.4 −60 3 Figure 1. Ohmic Region 2.2 1.8 2 VGS, GATE
−
SOURCE VOLTAGE (VOLTS) 2.4 2 1 VDS, DRAIN−
SOURCE VOLTAGE (VOLTS) −20 +20 +60 T, TEMPERATURE (°C) +140 +100 VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) I D, DRAIN CURRENT (AMPS) 1.8 1.6 I D, DRAIN CURRENT (AMPS) TA = 25°C 10 1.2 1.15 VDS = VGS ID = 1 mA 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 0.7 −60 Figure 3. Temperature versus Static Drain−Source On−Resistance −20 0 +20 +60 T, TEMPERATURE (°C) +100 Figure 4. Temperature versus Gate Threshold Voltage http://onsemi.com 3 9 +140 VN2222LL PACKAGE DIMENSIONS TO−92 CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 For additional information, please contact your local Sales Representative. VN2222LL/D