VN2410L

VN2410L Small Signal MOSFET 240 V, 200 mA, N−Channel TO−92 Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain − Source Voltage Drain − Gate Voltage Gate − Source Voltage − Continuous − Non−repetitive (tp ≤ 50 μs) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 240 240 ± 20 ± 40 200 500 350 2.8 −55 to 150 Unit Vdc Vdc Vdc Vpk mAdc mAdc mW mW/°C °C http://onsemi.com 200 mA, 240 V RDS(on) = 10 Ω N−Channel D G S THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 inch from case for 10 seconds Symbol RθJA TL Max 312.5 300 Unit °C/W °C 3 STRAIGHT LEAD BULK PACK 12 1 3 BENT LEAD TAPE & REEL AMMO PACK 2 TO−92 CASE 29 STYLE 22 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM & PIN ASSIGNMENT VN2 410L AYWW 1 Source 2 Gate 3 Drain A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2009 January, 2009 − Rev. 5 1 Publication Order Number: VN2410L/D VN2410L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit STATIC CHARACTERISTICS Drain − Source Breakdown Voltage (VGS = 0, ID = 100 μA) Zero Gate Voltage Drain Current (VDS = 120 Vdc, VGS = 0) (VDS = 120 Vdc, VGS = 0, TA = 125°C) Gate− Body Leakage (VDS = 0, VGS = ±15 V) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) On−State Drain Current (Note 1) (VGS = 10 V, VDS ≥ 2.0 VDS(on)) Drain−Source On Resistance (Note 1) (VGS = 2.5 V, ID = 0.1 A) (VGS = 10 V, ID = 0.5 A) Forward Transconductance (Note 1) (VDS = 10 V, ID = 0.5 A) V(BR)DSS IDSS 240 − Vdc μAdc − − − 0.8 1.0 10 500 ±100 2.0 − IGSS VGS(th) ID(on) rDS(on) nAdc Vdc Adc Ω − − 300 10 10 − gfs mS DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss − − − 125 50 20 pF pF pF SWITCHING CHARACTERISTICS Turn−On Time (VDD = 60 Vdc, ID = 0.4 A, RL = 150 Ω, RG = 25 Ω) t(on) t(r) t(off) t(f) 1. Pulse Test; Pulse Width < 300 μs, Duty Cycle v 2.0%. − − − − 8.0 8.0 23 34 ns ns ns ns Turn−Off Time ORDERING INFORMATION Device VN2410L VN2410LG VN2410LZL1 VN2410LZL1G Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping 1000 Units / Box 1000 Units / Box 2000 Ammo Pack 2000 Ammo Pack http://onsemi.com 2 VN2410L PACKAGE DIMENSIONS TO−92 CASE 29−11 ISSUE AM A R P L SEATING PLANE B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX H V 1 D G J C N N SECTION X−X DIM A B C D G H J K L N P R V STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- K G XX V 1 D J C N SECTION X−X DIM A B C D G J K N P R V ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 3 VN2410L/D