WPH4003-1E

Ordering number : ENA1967A WPH4003 N-Channel Power MOSFET http://onsemi.com 1700V, 3A, 10.5Ω, TO-3PF-3L Features • • ON-resistance RDS (on) =8.2Ω (typ.) Input Capacitance Ciss=850pF (typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage IDc*1 Limited only maximum temperature Tch=150°C IDpack*2 Tc=25°C (Our ideal heat dissipation condition) *3 Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation PD Drain Current (DC) Tc=25°C Unit 1700 V ±30 V 3 A 2.5 A 6 A 3.0 W 55 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 49 mJ 3 A Avalanche Current *5 Note : *1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=3A (Fig.1) *5 L≤10mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7538A-002 • Package : TO-3PF-3L • JEITA, JEDEC : SC-96 • Minimum Packing Quantity : 30 pcs./magazine WPH4003-1E 5.5 4.5 15.5 3.0 Marking Electrical Connection 10.0 3.6 3.5 2.0 5.0 25.0 24.5 2 PH4003 LOT No. 19.3 2.0 2.0 4.0 0.75 1 2.0 0.9 3 2 3 3.3 1 5.45 5.45 1 : Gate 2 : Drain 3 : Source TO-3PF-3L Semiconductor Components Industries, LLC, 2013 July, 2013 N0712 TKIM TC-00002823/HD 120910 QB No. A1967-1/7 WPH4003 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=10mA, VGS=0V VDS=1360V, VGS=0V Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=10V, ID=1mA VDS=20V, ID=1.5A Static Drain-to-Source On-State Resistance RDS(on) ID=1.5A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Ratings Conditions min typ Unit max 1700 V 1 mA ±100 nA 2 4 1.2 2.4 8.2 10.5 Ω 850 pF 90 pF 27 pF 19 ns 21 ns 200 ns VDS=30V, f=1MHz See Fig.2 V S Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=3A, VGS=0V 0.8 Reverse Recovery Time trr Qrr See Fig.3 410 ns 3000 nC Reverse Recovery Charge VDS=200V, VGS=10V, ID=3A ≥50Ω RG IS=3A, VGS=0V, di/dt=100A/μs L nC 6 nC 10V 0V VIN V VDD=200V ID=1.5A RL=125Ω VIN D WPH4003 VOUT PW≤10μs D.C.≤1% VDD 50Ω nC 1.5 Fig.2 Switching Time Test Circuit G S 10V 0V ns 48 22 Fig.1 Unclamped Inductive Switching Test Circuit D 55 G S P.G WPH4003 50Ω Fig.3 Reverse Recovery Time Test Circuit WPH4003 D 500μH G S VDD=50V Driver MOSFET Ordering Information Device WPH4003-1E Package Shipping memo TO-3PF-3L 30pcs./magazine Pb Free No. A1967-2/7 WPH4003 ID -- VDS 6 6 Tc=25°C 5 5 10V 8V Drain Current, ID -- A Drain Current, ID -- A ID -- VGS VDS=20V 4 6V 3 5V 2 1 --25°C 4 3 25°C Tc= 75°C 2 1 VGS=4V 0 0 20 25 30 35 40 45 Drain to Source Voltage, VDS -- V 0 14 75°C 12 10 25°C 8 6 Tc= --25°C 4 2 4 5 6 7 8 9 Gate to Source Voltage, VGS -- V 3 °C 25 2 1.0 = Tc 7 C 5° --2 5 3 2 75°C 0.1 0.01 14 IT16974 .5A =1 , ID 0V =1 S VG 10.0 5.0 --25 0 25 50 75 100 125 150 IT16963 IS -- VSD Single pulse VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 5 7 10 0 0.4 2 Ciss 3 2 100 7 5 Coss 3 Crss 2 0.8 1.0 1.2 IT16965 VDS=200V ID=3A 9 3 0.6 Qg -- VGS 10 f=1MHz 1000 7 5 0.2 Forward Drain to Source Voltage, VSD -- V IT16964 Ciss, Coss, Crss -- VDS 10000 7 5 Ciss, Coss, Crss -- pF 15.0 10 7 5 Forward Drain Current, IS -- A 5 12 Case Temperature, Tc -- °C Gate to Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S 10 VDS=20V 7 10 20.0 IT16975 | yfs | -- ID 10 8 Single pulse 0.0 --50 0 0 6 RDS(on) -- Tc 25.0 Static Drain to Source On State Resistance, RDS(on) -- Ω 16 4 Gate to Source Voltage, VGS -- V Single pulse ID=1.5A 18 2 IT16973 RDS(on) -- VGS 20 Static Drain to Source On State Resistance, RDS(on) -- Ω 50 --25°C 15 5°C 10 25°C 5 Tc=7 0 8 7 6 5 4 3 2 1 0 10 0 5 10 15 20 25 30 35 40 Drain to Source Voltage, VDS -- V 45 50 IT16966 0 10 20 30 40 Total Gate Charge, Qg -- nC 50 60 IT16967 No. A1967-3/7 WPH4003 ASO S/W Time -- ID 7 Drain Current, ID -- A 2 2 100 7 tf 5 3 tr td(on) 2 IDc(*1)=3A 3 td (off ) IDpack(*2)=2.5A 1.0 7 5 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 2 3 5 7 2 1.0 3 Drain Current, ID -- A 3.0 2.5 2.0 1.5 1.0 0.5 5 7 10 2 3 5 7 100 2 3 5 71000 2 3 5 IT16969 PD -- Tc 60 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2 3 Drain to Source Voltage, VDS -- V IT16968 50 40 30 20 10 0 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT16970 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT16971 EAS -- Ta 120 Avalanche Energy Derating Factor -- % Tc=25°C Single pulse 0.01 1.0 2 3 5 7 1 5 PD -- Ta 3.5 *1. Shows chip capability *2. Our ideal heat dissipation condition 3 2 10 0.1 s 1m s n m 10 0ms ratio 10 ope DC 3 IDP=6A(PW≤10μs) μs 10 s 0μ 10 5 Switching Time, S/W Time -- ns 10.0 7 5 VDD=200V VGS=10V 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT16972 No. A1967-4/7 WPH4003 Magazine Specification WPH4003-1E No. A1967-5/7 WPH4003 Outline Drawing WPH4003-1E Mass (g) Unit 5.5 mm * For reference No. A1967-6/7 WPH4003 Note on usage : Since the WPH4003 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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