ZTX749A_D26Z

ZTX749A ZTX749A PNP Low Saturation Transistor • This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. C BE TO-226 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage Value -35 VCBO Collector-Base Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current TJ, TSTG Operating and Storage Junction Temperature Range - Continuous Units V -2 A -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = -10mA -35 V BVCBO Collector-Base Breakdown Voltage IC = -100µA -45 V -5 BVEBO Emitter-Base Breakdown Voltage IE = -100µA ICBO Collector Cutoff Current VCB = -30V VCB = -30V, TA = 100°C -100 -10 nA µA V IEBO Emitter Cutoff Current VEB = -4V -100 nA On Characteristics* hFE DC Current Gain IC = -50mA, VCE = -2V IC = -1A, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V 70 100 75 15 300 VCE(sat) Collector-Emitter Saturation Voltage IC = -1A, IB = -100mA IC = -2A, IB = -200mA -300 -500 mV VBE(sat) Base-Emitter Saturation Voltage IC = -1A, IB = -100mA -1.25 V VBE(on) Base-Emitter On Voltage IC = -1A, VCE = -2V -1 V 100 PF Small-Signal Characteristics Cobo Output Capacitance VCB = -10V, IE = 0, f = 1MHz fT Transition Frequency IC = -100mA, VCE = -5V f = 100MHz 100 * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% Thermal Characteristics TA=25°C unless otherwise noted Symbol PD Total Device Dissipation Parameter Max. 1 Units W RθJA Thermal Resistance, Junction to Ambient 125 °C/W ©2003 Fairchild Semiconductor Corporation Rev. C, August 2003 ZTX749A Package Dimensions TO-226 S4.70-4.32; S1.52-1.02; 2" TYP S7.73-7.10; S7.87-7.37; 2" TYP S1.65-1.27; 0.51 S0.760.36; S15.61-14.47; S0.51-0.36; S0.48-0.30; S1.40-1.14; PIN S1.40-1.14; 99 95 1 E E 2 B C 3 C B S4.45-3.81; 5" TYP 1 2 3 TO-226AE (95,99) S2.41-2.13; For leadformed option ordering, refer to Tape & Reel data information. Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. C, August 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I3