通用二极管/ES3D

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This literature is subject to all applicable copyright laws and is not for resale in any manner. ES3A - ES3J Fast Rectifiers Features • • • • • • For Surface Mount Applications Glass-Passivated Junction Low-Profile Package Easy Pick and Place Built-in Strain Relief Superfast Recovery Times for High Efficiency SMC/DO-214AB COLOR BAND DENOTES CATHODE Ordering Information Part Number Top Mark Package Packing Method ES3A ES3A DO-214AB (SMC) Tape and Reel ES3B ES3B DO-214AB (SMC) Tape and Reel ES3C ES3C DO-214AB (SMC) Tape and Reel ES3D ES3D DO-214AB (SMC) Tape and Reel ES3J ES3J DO-214AB (SMC) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value ES3A ES3B ES3C ES3D ES3J 50 100 150 200 600 Unit VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current, .375” Lead Length at TA = 75°C 3.0 A IFSM Non-Repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine Wave 100 A -50 to +150 C TJ, TSTG Operating Junction and Storage Temperature Range © 1999 Fairchild Semiconductor Corporation ES3A - ES3J Rev. 2.11 V www.fairchildsemi.com ES3A - ES3J — Fast Rectifiers June 2016 Values are at TA = 25°C unless otherwise noted. Symbol PD Parameter Value Unit 1.66 W Power Dissipation Maximum Land Pattern: 16 x 16 mm 47 125 RJA Thermal Resistance, Junction to Ambient(1) Minimum Land Pattern: 2.6 x 3.2 mm RJL Thermal Resistance, Junction to Lead(1) Maximum Land Pattern: 16 x 16 mm 12 Minimum Land Pattern: 2.6 x 3.2 mm 16 C/W C/W Note: 1. Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Value ES3A ES3B ES3C VF Maximum Forward Voltage IF = 3.0 A trr Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A IR Maximum Reverse Current at Rated VR TA = 25C 10 TA = 100C 500 CT Total Capacitance VR = 4.0 V, f = 1.0 MHz 45 © 1999 Fairchild Semiconductor Corporation ES3A - ES3J Rev. 2.11 ES3D ES3J 0.95 1.70 Typ. 20 35 Max. 30 45 Unit V ns A pF www.fairchildsemi.com 2 ES3A - ES3J — Fast Rectifiers Thermal Characteristics ES3A - ES3J — Fast Rectifiers 100 3.5 3 Forward Current, IF[A] Average Rectified Forward Current, IF [A] Typical Performance Characteristics 2.5 2 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.0mm) LEAD LENGTHS 1.5 1 0.5 0 0 25 ES3A-ES3D 10 ES3J 1 0.1 o TA=25 C Pulse Width = 300us 2% Duty Cycle 50 75 100 125 Ambient Temperature [ºC] 150 0.01 0.4 175 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward Voltage Drop, VF[V] Figure 1. Forward Current Derating Curve Figure 2. Foward Voltage Characteristics 1000 100 80 70 Reverse Current, IR [ μA] Total Capacitance, C T [pF] 90 60 50 40 30 20 10 0 0.1 0.5 1 5 10 20 50 100 Reverse Voltage, V R [V] 50 NONINDUCTIVE (-) 50 NONINDUCTIVE T A = 25º C 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] +0.5A trr 0 DUT 50V (approx) 1 Figure 4. Reverse Current vs. Reverse Voltage Figure 3. Total Capacitance 50 NONINDUCTIVE T A = 75º C 10 0.1 500 T A = 100 ºC 100 Pulse Generator (Note 2) -0.25A (+) OSCILLOSCOPE (Note 1) -1.0A 1.0cm NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. SET TIME BASE FOR 5/ 10 ns/ cm Figure 5. Reverse Recovery Time Characteristic and Test Circuit Diagram © 1999 Fairchild Semiconductor Corporation ES3A - ES3J Rev. 2.11 www.fairchildsemi.com 3 8.15 7.75 B 1.96 6.25 5.55 3.27 2.75 B 3.39 6.81 7.15 6.60 A 0.13 M C B A LAND PATTERN RECOMMENDATION TOP VIEW 2.45 1.90 A 2.65 MAX GAGE PLANE C 0.30 0.05 4.70 4.40 0.203 0.050 B 0.13 M C B A NOTES: A. EXCEPT WHERE NOTED, CONFORMS TO JEDEC DO-214, VARIATION AB B C. D. DOES NOT COMPLY TO JEDEC STD. VALUE ALL DIMENSIONS ARE IN MILLIMETERS DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS. DIMENSIONS AND TOLERANCING AS PER ASME Y14.5-2009 LAND PATTERN STANDARD: DIOM7957X241M DRAWING FILENAME: MKT-DO214ABrev2 F. G. 0.41 0.15 SEATING PLANE SIDE VIEW E. 8° 0° R0.15 4X 0.45 1.60 0.75 DETAIL A SCALE 2:1 8° 0° ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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