OP234W

Product Bulletin OP234W July 2001 PRELIMINARY GaAlAs Hermetic Infrared Emitting Diodes Type OP234W Features • Very high speed • Enhanced temperature range • Wide irradiance pattern • Mechanically and spectrally matched to the OP800WSL and OP830SL series devices • Significantly higher power output than GaAs at equivalent drive currents • TO-46 hermetically sealed package • Case is electrically connected to the cathode Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Peak Forward Current (2 µs pulse width, 0.1% duty cycle) . . . . . . . . . . . . . . . . 10.0 A Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +150o C Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +125o C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW(2) Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow soldering. (2) Derate linearly 2.0 mW/o C above 25 o C. (3) Ee(APT) is a measurement of the average radiant intensity emitted by the IRED within a cone formed from the IRED chip to an aperture. The aperture of diameter 0.250” is located a distance of 0.466”from the flange (measurement plane) to the aperture plane (parallel to the measurement plane) along the optical and mechanical axis. The cone formed is a 30 °cone. The radiant intensity is not necessarily uniform within the measured area. (4) Measurement made with 100 µs pulse measured at the trailing edge of the pulse with a duty cycle of 0.1% and an I F = 100 mA. Description The OP234W device is an 850 nm gallium aluminum arsenide infrared emitting diodes mounted in hermetically sealed packages. The broad irradiance pattern provides relatively even illumination over a large area. Type OP234W Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL Ee(APT) PO VF IR λ p B ∆λ /∆T P θHP tr tf Power Output Forward Voltage Reverse Current Wavelength at Peak Emission Spectral Bandwidth Half Power Points Spectral Shift with Temperature Emission Angle at Half Power Points Rise Time Fall Time 850 50 +0.30 60 15 10 PARAMETER Apertured Radiant Incidence MIN TYP MAX 5.0 17 2.0 100 -- UNITS mW/cm mW V µA nm nm nm/ C Deg. ns ns o 2 TEST CONDITIONS I F = 100 mA(3)(4) I F = 100 mA I F = 100 mA(4) VR = 2.0 V I F = 10 mA I F = 10 mA I F = Constant I F = 100 mA I F(PK) = 100 mA, PW = 10 µs, D.C. = 10% Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396