OP251

Infrared Light Emitting Diode in Miniature SMD Package OP251 • • • • Internal Lens High Power 1206 Package Size 880nm Wavelength The OP251 is a GaAlAs infrared LEDs mounted in a miniature SMT package. The device incorporates an integral molded lens which enables a tight beam angle and provides an even emission pattern. This device is packaged in a 1206 size chip carrier that is compatible with most automated mounting equipment. The OP251 is mechanically and spectrally matched to the OP520 series phototransistors. Applications • • Non-Contact Position Sensing Datum detection • • Machine automation Optical encoders Relative Radiant Intensity vs. Angular Displacement 100% 80% Relative Radiant Intensity 60% OP251 40% 20% 0% -90 -60 -30 0 30 60 90 Pb RoHS A subsidiary of TT electronics plc Angular Displacement (Degrees) Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com SMD Infrared LED OP251 Absolute Maximum Ratings TA = 25o C unless otherwise noted Storage Temperature Range Operating Temperature Range Lead Soldering Temperature Reverse Voltage Continuous Forward Current Power Dissipation Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. De-rate linearly at 2.17 mW/° C above 25° C. -40° C to +85° C -25° C to +85° C 260° C(1) 30 V 50 mA 130 mW (2) Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL Ee(APT) VF IR λP ΘHP tr, tf 3. PARAMETER Apertured Radiant Incidence Forward Voltage Reverse Current Peak Emission Wavelength Emission Angle at Half Power Points Rise and Fall Time MIN 0.3 TYP MAX UNITS mW/cm 2 CONDITIONS IF = 20mA IF = 20mA VR = 2.0V IF = 10mA IF = 20mA IF(PEAK) = 100mA, PW = 10µs, 10% D.C. (3) 1.5 100 890 105 500 V µA nm Deg. ns Ee(APT) is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and 0.590” (14.99mm) from the measurement surface. Ee(APT) is not necessarily uniform within the measured area. Relative Radiant Intensity vs. Forward Current vs. Temperature 350% 300% Normalized at IF = 20mA, TA = 20°C. Temperatures stepped in 20°C Increments Forward Voltage vs. Forward Current vs. Temperature 1.5 Temperatures stepped in 20 °C Increments -40°C -40°C Relative Radiant Intensity 1.4 Forward Voltage (V) 250% 200% 150% 100% 50% 100°C 1.3 100°C 1.2 1.1 0 10 20 30 40 50 1.0 0 10 20 30 40 50 Forward Current (mA) OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com Forward Current (mA) Issue 1.1 07.05 Page 2 of 3 SMD Infrared LED OP251 PIN FUNCTION 1 2 Anode Cathode RECOMMENDED SOLDER PADS [4.60±0.10] .181±.0039 [1.50±0.10] .059±.0039 [1.60±0.10] .063±.0039 [1.60±0.10] .063±.0039 OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com Issue 1.1 07.05 Page 2 of 3