OP268FPS

Product Bulletin OP268FPS November 2000 Plastic Point Source Infrared Emitting Diode Type OP268FPS Features • Point source irradiance pattern • Flat lensed for wide radiation angle • Easily stackable on 0.100”(2.54 mm) hole centers Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Peak Forward Current (2 µs pulse width, 0.1% duty cycle). . . . . . . . . . . . . . . . . . 1.0 A Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . -40°C to +100°C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C (1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2) NOTES: (1) RMA flux is recommended. Duration can be ex tended to 10 seconds maximum when flow soldering. Max imum 20 grams force may be applied to the leads when soldering. (2) Derate linearly 1.33 mW/°C above 25 °C. (3) E e(APT) is a measurement of the average apertured radiant en ergy incident upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and centered on the mechanical axis of the “ emitting surface”and 0.400” (10.16 mm) from the measurement surface. Ee(APT) is not necessarily uniform within the measured area. Description The OP268FPS contains an 850 nm gallium aluminum arsenide infrared emitting diode molded in an “ end-looking” miniature black package. This device has a wide radiation angle due to its flat emitting surface. The point source GaAIAs IRED emits photons from a 0.004” diameter area centered with the optical centerline. Small size and 0.100” (2.54 mm) lead spacing allow considerable design flexibility. The stable VF vs. Temperature characteristic make them ideal for applications where voltage is limited (such as battery operation). The low tr /tf make them ideal for high speed operation. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 11 (972) 323-2200 Fax (972) 323-2396 Type OP268FPS Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL Ee(APT) VF IR λ p B θHP tr tf PARAMETER Apertured Irradiance Forward Voltage Reverse Current Wavelength at Peak Emission Spectral Bandwidth Between Half Power Points Emission Angle at Half Power Rise Time Fall Time MIN TYP MAX .10 .90 1.80 20 850 50 ±° 50 10 10 UNITS mW/cm V µA nm nm Deg. ns ns 2 TEST CONDITIONS I F = 20 mA(3) I F = 20 mA VR = 2 V I F = 20 mA I F = 20 mA I F = 20 mA I F(PK) = 20 mA PW = 10 µs, D.C. = 10% Optek re serves the right to make changes at any time in order to improve design and to supply the best product possi ble. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 12