OP280

Infrared Light Emitting Diode in SMT Plastic Package OP280 • • • • W ide Beam Angle High Power Plastic Leadless Chip Carrier (PLCC-2) 880nm Wavelength The OP280 is a GaAlAs infrared LEDs mounted in a plastic SMT package. The device flat lens window which allows a wide beam angle. This device is packaged in a plastic leadless chip carrier (PLCC-2) that is suitable for single device or array applications. The OP280 is mechanically and spectrally matched to the OP580 phototransistor. Applications • • Non-Contact Position Sensing Datum detection • • Machine automation Optical encoders Relative Radiant Intensity vs. Angular Displacement 100% 80% Relative Radiant Intensity 60% 40% OP280 20% 0% -90 -60 -30 0 30 60 90 Pb RoHS A subsidiary of TT electronics plc Angular Displacement (Degrees) Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com SMT Infrared LED OP280 Absolute Maximum Ratings TA = 25o C unless otherwise noted Storage Temperature Range Operating Temperature Range Lead Soldering Temperature Reverse Voltage Continuous Forward Current Power Dissipation Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. De-rate linearly at 2.17 mW/° C above 25° C. -40° C to +85° C -25° C to +85° C 260° C(1) 30 V 50 mA 130 mW (2) Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL Ee(APT) VF IR λP ΘHP tr, tf 3. PARAMETER Apertured Radiant Incidence Forward Voltage Reverse Current Peak Emission Wavelength Emission Angle at Half Power Points Rise and Fall Time MIN 0.5 TYP MAX UNITS mW/cm 2 CONDITIONS IF = 20mA IF = 20mA VR = 2.0V IF = 10mA IF = 20mA IF(PEAK) = 100mA, PW = 10µs, 10% D.C. (3) 1.5 100 890 100 500 V µA nm Deg. ns Ee(APT) is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and 0.590” (14.99mm) from the measurement surface. Ee(APT) is not necessarily uniform within the measured area. Relative Radiant Intensity vs. Forward Current vs. Temperature 350% 300% Normalized at IF = 20mA, TA = 20°C. Temperatures stepped in 20°C Increments Forward Voltage vs. Forward Current vs. Temperature 1.5 Temperatures stepped in 20 °C Increments -40°C -40°C Relative Radiant Intensity 1.4 Forward Voltage (V) 250% 200% 150% 100% 50% 100°C 1.3 100°C 1.2 1.1 0 10 20 30 40 50 1.0 0 10 20 30 40 50 Forward Current (mA) OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com Forward Current (mA) Issue 1.1 07.05 Page 2 of 3 SMT Infrared LED OP280 1 2 ANODE MARK PIN FUNCTION 1 2 Cathode Anode RECOMMENDED SOLDER PADS [4.50±0.10] .177±.0039 [1.50±0.10] .059±.0039 [1.50±0.10] .059±.0039 [2.60±0.10] .102±.0039 OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com Issue 1.1 07.05 Page 3 of 3