OP520

SMD Silicon Phototransistor OP520, OP521 OP520, OP521 • • • • High Photo Sensitivity Fast Response Time 1206 Package Size Opaque or Water Clear Flat Lens Description: The OP520 and OP521 are NPN silicon phototransistor mounted in miniature SMT packages. Both the OP520 and OP521 have a flat lens however, the OP520 lens is opaque to shield the device from stray light. These sensors are packaged in 1206 size chip carriers that are compatible with most automated mounting equipment. The OP520 and OP521 are mechanically and spectrally matched to the OP250 series infrared LEDs. Applications • • • • Non-Contact Position Sensing Datum detection Machine automation Optical encoders PIN 1 2 FUNCTION Collector Emitter RECOMMENDED SOLDER PADS [4.60±0.10] .181±.0039 [1.50±0.10] .059±.0039 [1.60±0.10] .063±.0039 [1.60±0.10] .063±.0039 RoHS OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue 1.1 02/07 Page 1 of 3 OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com SMD Silicon Phototransistor OP520, OP521 Absolute Maximum Ratings TA = 25o C unless otherwise noted Storage Temperature Range Operating Temperature Range Lead Soldering Temperature Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. De-rate linearly at 2.17 mW/° C above 25° C. -40° C to +85° C -25° C to +85° C 260° C(1) 30 V 5V 20 mA 75 mW(2) Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL IC(ON) VCE(SAT) ICEO V(BR)CEO V(BR)ECO tr, tf 3. 4. PARAMETER On-State Collector Current Collector-Emitter Saturation Voltage Collector-Emitter Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Rise and Fall Times MIN 0.25 TYP MAX UNITS mA CONDITIONS VCE = 5.0V, Ee = 5.0mW/cm2 (3) IC = 100µA, Ee = 5.0mW/cm2 (3) VCE = 5.0V, Ee = 0 (4) IC = 100µA, Ee = 0 IE = 100µA, Ee = 0 IC = 1mA, RL = 1KΩ 0.4 100 30 5 15 V nA V V µs Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (0.04Ta-3.4) where Ta is the ambient temperature in ° C. To Calculate typical collector dark current in µA, use the formula ICEO = 10 160% 140% Relative On-State Collector Current vs. Irradiance Normalized at Ee = 5mW/cm2 Conditions: VCE = 5V, λ = 935nm, TA = 25 °C Relative On-State Collector Current vs. Temperature 140% 130% Normalized at TA = 25°C . Conditions: VCE = 5V, λ = 935nm, TA = 25 °C 80°C Relative Collector Current 120% 100% 80% 60% 40% 20% Relative Collector Current 120% 110% 100% 90% 80% 70% -40°C 0 1.0 2.0 3.0 4.0 5.0 6.0 2 7.0 8.0 -25 0 25 50 75 100 Ee—Irradiance (mW/cm ) Temperature—(°C) SMD Silicon Phototransistor OP520, OP521 Relative Response vs. Angular Position 100% 1.40 Relative On-State Collector Current vs. Collector-Emitter Voltage 6 mW/cm2 IC(ON) - On-State Collector Current (mA) 1.20 1.00 80% 5 mW/cm2 Relative Response 4 mW/cm2 60% 0.80 3 mW/cm2 40% 0.60 2 mW/cm2 0.40 0.20 1 mW/cm2 20% 0% -90 -60 -30 0 30 60 90 0 0.1 0.2 0.3 0.4 0.5 Angular Position (Degrees) Collector-Emitter Voltage (V) Collector-Emitter Dark Current vs. Temperature 1000 Conditions: Ee = 0 mW/cm2 VCE = 10V Relative Response vs. Wavelength 100% Collector-Emitter Dark Current (nA) 80% 100 Relative Response 60% 10 40% OP521 OP520 1 20% 0 -25 0 25 50 75 100 0% 400 500 600 700 800 900 1000 1100 Temperature—(°C) Wavelength (nm)